solderable ends d2 d2=d1 0 0.20 0.5 0.1 0.5 0.1 4.9 0.2 2.6 0.15 d1 features m e c h an i c al d at a m a x i m u m r a t i ngs a n d e l e c t r i c a l ch a r a c t e r i s t i cs ratings at 25 o c ambient temperature unless otherwise specified maximum recurrent peak reverse voltage v rrm v ma x imu m rms v o lt a g e v r w s v maximum dc blocking voltage v dc v maximum average forw ord rectif ied current at c t l ( s e e f i g . 1) ( n o t e 2) i ( av) a peak f orw ard surge current 8.3ms single half - c sine-w ave superimposed on rated load(jedec c method) i f s m a m a x i m um i n s tantaneous f o r w a r d v o l tage at v 1 . 0 a ( n o t e . 1) v f v maximum dc reverse current @t a = 25 o c at r ated d c b l o c k i ng v o l t age ( n o t e 1) @ t a = 100 o c r | ja r | jl operating junction and storagetemperature range t s t g o c storage temperature range t j o c 0.5 45 15 i r note: 1.pulse test:300 | s pulse width,1%duty cy cle sms120---sms1a0 2. p . c . b . m o u n t e d w i t h 0 . 55 " x 0 . 55 " ( 1 4 . 0 x 14 . 0 m m 2 ) c o p p er p a d a r e a s r e v e r s e v o l t a g e : 2 0 --- 10 0 v cu r r e n t : 1 . 0 a ? built-in strain relief ? c a s e : j e d e c d o - 21 3ab , m o l ded p l a s t i c o v er 1 11 1 pa ss i v a t ed c hip ? low power loss,high effciency ? plastic package has underwriters laborator 111 flammability classification 94v-0 t y p i c al the r m al r e s i t an c e ( n o t e 2) k / w ? high temperature soldering guaranteed:250 o c/10 1 11 seconds at terminals s ms120 SMS130 sms140 sms160 sms190 sms1a0 ? p o l a r i t y : c o l or band d e no t es c a t hode end ? w eigh t : 0.0046 ounces, 0.116 gram ma units 20 30 40 60 90 100 d o - 2 13ab ? low profile package ? for surface mounted applications 14 21 28 42 63 70 20 30 40 60 90 100 ? t e r m i nal s : s o l der p la t ed, s olde r able per m i l - s t d - 750, 1 11 1 m e t h od 2026 ? high current capability,low forward voltage drop 30 1.0 ? for use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ? guardring for overvoltage protection - 5 5--- +150 - 5 5--- +150 0.5 0.7 0.79 5.0 ? metal silicon junction, majority carrier conduction ? high surge capability dimensions in millimeters barrier rectifiers surface mount schottky diode semiconductor korea www.diode.kr
.01 0 0.1 1.0 10 100 80 60 40 20 100 t j =25 t j = 1 00 0 10 30 1 1 0 10 0 15 5 8.3ms single half si ne-wave 50 25 20 5 40 . 2 . 3 .4 .5 .6 .7 .8 .9 0.01 1 .0 10 sms120 sms160 sms190 0 .2 .4 .6 .8 0 2 5 50 75 single phase half wave 60h z resistive or inductive load 1 . 0 1 00 125 150 1 75 average forward rectified current,amperes peak forward surge current,amperes ins t an t a neous f o rward curren t ,amperes ins t an t aneous reverse curren t ,micr o amperes nu m be r o f c y c l e s a t 6 0 h z i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s pe r c e n t o f r a t ed p e ak r ev e r se v o l t a g e , ? lead t e m pe r a t u r e ?? sms120---sms1a0 f i g . 3 - - t y p i cal f o r w a r d c har a c t e r i s t i c s f i g . 4 - - t y p i c al r e v e r s e c h ara c t e r i s t i cs fig. 1 -- forward derating curve fig. 2-- peak forward surge current -sms1a0 -sms140 0.1 www.diode.kr diode semiconductor korea
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