5? features on-state current, 300 ma zero voltage crossing blocking voltage, 600 v isolation test voltage from double molded package, 5300 vac rms high input sensitivity i ft =2 ma, pf=1.0 i ft =5 ma, pf 1.0 high static dv/dt 10,000 v/ m s inverse parallel scrs provide commutating dv/dt > 10k v/ m s very low leakage < 10 m a small 6-pin dip package underwriters lab file #e52744 vde app roval #0884 (optional with option 1, add -x001 suf?) maximum ratings emitter reverse voltage ................................................ 6 v forward current............................................ 60 ma surge current ................................................. 2.5 a thermal resistance ................................. 750 c/w power dissipation ...................................... 100 mw derate from 25 c ................................ 1.33 mw/ c detector peak off-state voltage................................... 600 v peak reverse voltage.................................... 600 v rms on-state current ................................ 300 ma single cycle surge ............................................ 3 a thermal resistance .................................. 125 c/w total power dissipation.............................. 500 mw derate from 25 c................................... 6.6 mw/ c package isolation test voltage .........................5300 vac rms storage temperature ................... ?5 c to +150 c operating temperature................ ?5 c to +100 c lead soldering temperature ..............260 c/5 sec. description the IL410 consists of a gaas irled optically coupled to a photosensi- tive zero crossing triac network. the triac consists of two inverse parallel connected monolithic scrs. these three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insula- tion double molded, over/under leadframe construction. high input sensitivity is achieved by using an emitter follower pho- totransistor and a cascaded scr predriver resulting in an led trigger current of less than 2 ma (dc). the IL410 uses two discrete scrs resulting in a commutating dv/dt greater than 10kv/ m s. the use of a proprietary dv/dt clamp results in a static dv/dt of greater than 10kv/ m s. this clamp circuit has a mosfet that is enhanced when high dv/dt spikes occur between mt1 and mt2 of the triac. when conducting, the fet clamps the base of the pho- totransistor, disabling the ?st stage scr predriver. the zero cross line voltage detection circuit consists of two enhance- ment mosfets and a photodiode. the inhibit voltage of the network is determined by the enhancement voltage of the n-channel fet. the p- channel fet is enabled by a photocurrent source that permits the fet to conduct the main voltage to gate on the n-channel fet. once the main voltage can enable the n-channel, it clamps the base of the phototrans- istor, disabling the ?st stage scr predriver. the 600v blocking voltage permits control of off-line voltages up to 240vac, with a safety factor of more than two, and is suf?ient for as much as 380vac. the IL410 isolates low-voltage logic from 120, 240, and 380 vac lines to control resistive, inductive, or capacitive loads including motors, sole- noids, high current thyristors or triac and relays. applications include solid-state relays, industrial controls, of?e equip- ment, and consumer appliances. dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.79 ) .150 (3.81 ) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) . 248 (6.30) . 256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 typ. .300 (7.62) .347 (8.82) 4 typ. 1 2 3 6 5 4 triac mt2 substrat e do not connect triac mt1 led anode led cathode nc *zero crossing circuit zcc* IL410 zero voltage crossing 600 v triac driver optocoupler this document was created with framemaker 4.0.4
5? IL410 characteristics symbol min typ max unit condition emitter forward voltage v f 1.16 1.35 v i f =10 ma reverse current i r 0.1 10 m av r =6 v capacitance c o 25 pf v f =0 v, f=1 mhz thermal resistance, junction to lead r thjl 750 c/w output detector off-state voltage v d(rms) 424 460 v i d(rms) =70 ma off-state current i d(rms)1 10 100 m av d =600 v, t a =100 c, i f =0 ma off state current i d(rms)2 200 m av d =600 v, i f =rated i ft on-state voltage v tm 1.7 3 v i t =300 ma on state current i tm 300 ma pf=1.0, v t(rms) =1.7 v surge (non-repititive), on-state current i tsm 3 a f=50 hz trigger current 1 i ft1 2.0 ma v d =5 v trigger current 2 i ft2 6.0 ma v op =220 v, f=50 hz, t j =100 c, t pf >10 ms trigger current temp. gradient d i ft1 / d t j d i ft2 / d t j 7 7 14 14 m a/k m a/k inhibit voltage temp. gradient d v dinh / d t j -20 mv/k off-state current in inhibit state i dinh 50 200 m ai f =i ft1 , v drm capacitance between input and output circuit c io 2.0 pf v d =0, f=1 khz holding current i h 65 500 m a latching current i l 5mav t =2.2 v zero cross inhibit voltage v ih 15 25 v i f =rated i ft turn-on time t on 35 m sv rm =v dm =424 vac turn-off time t off 50 m s pf=1.0, i t =300 ma critical rate of rise of off-state voltage dv/dt cr dv/dt cr 10000 5000 v/ m s v/ m s vd=0.67 v drm , t j =25 c t j =80 c critical rate of rise of voltage at current commutation dv/dt crq dv/dt crq 10000 5000 v/ m s v/ m s v d =0.67 v drm , di/dt crq 15 a/ms t j =25 c t j =80 c critical rate of rise of on-state current di/dt cr 8 a/ms thermal resistance, junction to lead r thjl 150 c/w insulation and isolation critical rate of rise of coupled input/output voltage dv (io) /dt 10000 v/ m si t =0 a, v rm =v dm =424 vac common mode coupling capacitor c cm 0.01 pf packing capacitance c io 0.8 pf f=1 mhz, v io =0 v isolation test voltag, input-output v iso 5300 vac rms relative humidity 50% creepage 3 7mm clearance 3 7mm creepage tracking resistance per din iec 112/vde 0303, part 1 group iiia per din vde 10110 cti 175 isolation resistance r is r is 3 10 12 3 10 11 w w v io =500 v t a =25 c t a +100 c
5? IL410 power factor considerations a snubber isn t needed to eliminate false operation of the triac driver because of the IL410 s high static and commu- tating dv/dt with loads between 1 and 0.8 power factors. when inductive loads with power factors less than 0.8 are being driven, include a rc snubber or a single capacitor directly across the device to damp the peak commutating dv/dt spike. normally a commutating dv/dt causes a turning- off device to stay on due to the stored energy remaining in the turning-off device. but in the case of a zero voltage crossing optotriac, the commutating dv/dt spikes can inhibit one half of the triac from turning on. if the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the triac will be held-off and not turn-on. this hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in figure 1. note that the value of the capacitor increases as a function of the load current. figure 1. shunt capacitance versus load current the hold-off condition also can be eliminated by providing a higher level of led drive current. the higher led drive pro- vides a larger photocurrent which causes the phototransis- tor to turn-on before the commutating spike has activated the zero cross network. figure 2 shows the relationship of the led drive for power factors of less than 1.0. the curve shows that if a device requires 1.5 ma for a resistive load, then 1.8 times (2.7 ma) that amount would be required to control an inductive load whose power factor is less than 0.3. 400 350 300 250 200 150 100 50 0 .001 .01 .1 1 il - load current - ma(rms) cs - shunt capacitance - f cs( f)= 0.0032( f)* 10^(0.0066il(ma)) ta = 25 c, pf = 0.3 if = 2.0ma figure 2. normalized led trigger current versus power factor figure 3. forward voltage versus forward current figure 4. peak led current versus duty factor, tau 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pf - power factor nifth - normalized led trigger current ta = 25 c ifth normalized to ifth @ pf = 1.0 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 if - forward current - ma vf - forward voltage - v ta = -55 c ta = 25 c ta = 85 c 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 t - led pulse duration - s if(pk) - peak led current - ma .005 .05 .02 .01 .1 .2 .5 duty factor t t df = /t t
5? IL410 figure 5. maximum led power dissipation figure 6. typical output characteristics i t = f(v t ), parameter: t j figure 7. current reduction i trms =f(t a ), r thja =125 k/w device switch soldered in pcb or base plate. 100 80 60 40 20 0 -20 -40 -60 0 50 100 150 ta - ambient temperature - c p - led power - mw led figure 8. current reduction i trms =f(t pin5 ), r thj?in5 =16.5 k/w thermocouple measurement must be performed potentially separated to a1 and a2. measuring junction as near as possible at the case. figure 9. typical trigger delay time t gd =f (i f i ft25 c ), v d =200 v, f=40 to 60 hz, parameter: t j figure 10. typical inhibit current i dinh =f(i f /i ft25 c ) v d =600 v, parameter: t j
5? IL410 figure 11. power dissipation 40 to 60 hz line operation, p tot =f(i trms ) figure 12. typical static inhibit voltage limit v dinhmin = f(i f /i ft 25 c), parameter: t j device zero voltage switch can be triggered only in hatched area below t j curves. current commutation: the values 100 a/ms with following peak reverse recovery current >80 ma should not be exceeded. avoiding high-frequency turn-off current oscillations: this effect can occur when switching a circuit. current oscillations which appear essentially with inductive loads of a higher winding capacity result in current com- mutation and can generate a relatively high peak reverse recovery current. the fol- lowing alternating protective measures are recommended for the individual operating states: 1?pply a capacitor to the supply pins at the load-side. 2?connect a series resistor to the IL410 output and bridge both by a capacitor. 3?onnect a choke of low winding capacity in series, e.g., a ringcore choke, with higher load currents. note: measures 2 to 3 are especially required for the load separated from the IL410 during oper- ation. the above mentioned effects do not occur with IL410 circuits which are connected to the line by transformers and which are not mechanically interrupted. in such cases as well as in applications with a resistive load the corresponding protective circuits can be neglected. 0.1 f 220 v ~ 1 2 3 6 5 4 22 nf 220 v ~ 2 3 5 4 16 33 w 22 nf 220 v ~ 1 2 3 5 4 6 500 h
5? IL410 zero voltage switch the IL410 with zero voltage switch can only be triggered during the zero crossing the sine ac voltage. this prevents current spikes, e. g. when turning-on cold lamps or capacitive loads. applications direct switching operation: the IL410 switch is mainly suited to control synchronous motors, valves, relays and solenoids in gr?tz circuits. due to the low latching current (500 m a) and the lack of an rc circuit at the output, very low load currents can easily be switched. indirect switching operation: the IL410 switch acts here as a driver and thus enables the driving of thyristors and triacs of higher performance by microprocessors. the driving current pulse should not exceed the maximum permissible surge cur- rent of the IL410. for this reason, the IL410 without zero voltage switch often requires current limiting by a series resistor. the favorably low latching current in this operating mode results in ac current switches which can handle load currents from some milliamperes up to high currents. application note ?over voltage protection: a voltage-limiting varistor (e.g. sio vs05k250) which directly connected to the IL410 can protect the component against overvoltage. technical information commutating behavior the use of a triac at the output creates dif?ulties in com- mutation due to both the built-in coupled thyristor systems. the triac can remain conducting by parasitic triggering after turning off the control current. however, if the IL410 is equipped with two separate thyristor chips featuring high dv/ dt strength, no rc circuit is needed in case of commutation. control and turn-on behavior the trigger current of the IL410 has a positive temperature gradient. the time which expires from applying the control current to the turn-on of the load current is de?ed as the trig- ger delay time (tgd). on the whole this is a function of the overdrive meaning the ratio of the applied control current ver- sus the trigger current (i f /i ft ). if the value of the control cur- rent corresponds to that of the individual trigger current of IL410 turn-on delay times amounts to a few milliseconds only. the shortest times of 5 to 10 m s can be achieved for an over- drive greater or equal than 10. the trigger delay time rises with an increase in temperature. for very short control current pulses (t plf <500 m s) a corre- spondingly higher control current must be used. only the IL410 without zero voltage switch is suitable for this operating mode.
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