FESD3V3A chip tvs diode mechanical data e}? ? dice size a x /a y :450um,b x /b y :310um wafer size 4(gross die:79500pcs/good die>73935) chip thickness a)230um20um scribe line width 60um top metal al back side metal ti - ni - ag for soldering parameter 6 \ p e r o & r q g l w l r q v 9 d o x h 8 q l w reverse stand - off voltage v rwm 4.0 v peak pulse power p pp tp=8/20us 300** w peak pulse current i pp tp=8/20us 28** a electrostatic discharge v esd iec61000 - 4 - 2 level 4 15(air) 8(contact) kv max.junction temp. t j + 150 parameter 6 \ p e r o & r q g l w l r q 0 l q 7 \ s 0 d [ 8 q l w breakdown voltage v br i t =1ma 5.2 5.8 6.3 v reverse leakage current i r v r =3.3v 15.0 ua clamping voltage v c i pp =1a i pp =5a 6.9 8.4 v diode capacitance cj v r =0v f=1mh z 350 pf characteristcs ta=25 ew1608e0 - fw - a notes: ( 1)sampling testng:no bad dice inking/guaranteed good die >93% (2)100% testng (3)tj=ta+rth(j - a)*(pf+pr),where rth(j - a) - thermal resistance,pf - forward power dissipaton, pr - revers power dissipaton (4)**for device testng futurewafer technology co.,ltd www.futurewafer.com.tw+886 - 3 - 3573583
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