digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 T6411 series bidirectional triode thyristors available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit repetitive peak off-stag e voltage, gate open (t j = -65 to +100c) T6411b T6411d T6411m T6411n v drm 200 400 600 800 volts rms on-state current (conduction angle = 360, t c 65c) i t(rms) 30 amps peak non-repetitive surge current (one cycle, 60hz) i tsm 300 amps circuit fusing considerations (t j = -65 to +100c, t = 1.25 to 10ms) i 2 t 450 a 2 s peak gate power (pulse width = 1.0s) p gm 40 watts average gate power p g(av) 0.75 watts peak gate current (pulse width 1.0s) i gm 2 amps operating junction temperature range t j -65 to +100 c storage temperature range t stg -65 to +150 c stud torque 30 in. lb. thermal characteristics characteristics symbol max unit thermal resistance, junction to case r ? jc 0.9 c/w electrical characteristics (t c = 25c unless otherwise noted, either polarity of mt2 to mt1, unless otherwise noted) characteristic symbol min typ max unit peak off state current (v d = v drm , gate open, t j = 100c i drm - - 4 ma peak on-state voltage (either direction) (i tm = 100a peak) v tm - 2.1 2.5 volts dc gate trigger current (continuous dc) (v d = 12v, r l = 30 ? ) mt2(+), g(+); mt2(-), g(-) mt2(+), g(-); mt2(-), g(+) i gt - - 20 35 50 80 ma dc gate trigger voltage (continuous dc), all trigger modes (v d = 12v, r l = 30 ? ) (v d = rated v drm , r l = 125? , t c = 100c) v gt - 0.2 1.35 - 2.5 - volts holding current (v d = 12v, gate open, i t = 150ma) i h - - 60 ma gate controlled turn on time (v d = rated v drm , i tm = 45a, i gt = 200ma, rise time = 0.1s) t gt - 1.7 3 s critical rate of rise of commutating voltage (commutating di/dt = 16a/ms, gate unenergized, v d = rated v drm , i t(rms) = 30a, t c = rated value from figure 1) dv/dt(c) 3 20 - v/s critical rate of rise of off-state voltage (v d = rated v drm , gate open, exponential waveform, t c = 100c) T6411b T6411d T6411m dv/dt 40 25 20 - - v/s sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130205
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 T6411 series bidirectional triode thyristors mechanical characteristics case to-48 marking alpha-numeric polarity cathode is stud to-48 inches millimeters min max min max a 0.604 0.614 15.340 15.600 b 0.551 0.559 14.000 14.200 c 1.050 1.190 2.670 30.230 f 0.135 0.160 3.430 4.060 h - 0.265 - 6.730 j 0.420 0.455 10.670 11.560 k 0.620 0.670 15.750 17.020 l 0.300 0.350 7.620 8.890 q 0.055 0.085 1.400 2.160 t 0.501 0.505 12.730 12.830 sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130205
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