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| ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters ? hermetic hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred HFA45HC60C www.irf.com 1 parameter max. units v r cathode to anode voltage 600 v i f(av) continuous forward current, t c = 80c 45 i fsm single pulse forward current, t c = 25c 225 p d @ t c = 25c maximum power dissipation 104 w t j, t stg operating junction and storage temperature range -55 to +150 c case style to-258aa (isolated base) anode common anode cathode v r = 600v v f = 1.71v q rr = 270nc di (rec)m /dt = 400a/s pd-20368a 2 www.irf.com HFA45HC60C ! "# parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 600 ? ? v i r = 100a electrical characteristics @ t j = 25c (unless otherwise specified) l s series inductance ? 8.7 ? nh measured from anode lead to cathode lead , 6mm ( 0.025 in) from package c t junction capacitance, see fig. 3 ? ? 65 pf v r = 200v i r reverse leakage current ? ? 10 a v r = v r rated see fig. 2 ? ? 1.0 ma v r = v r rated, t j = 125c $ dynamic recovery characteristics @ t j = 25c (unless otherwise specified) $ parameter min. typ. max. units test conditions t rr reverse recovery time ? ? 37 ns i f = 1.0a,v r = 30v, di f /dt = 200a/s t rr1 reverse recovery time ? 74 97 ns t j = 25c see fig. t rr2 ? 194 ? t j = 125c 5 i f = 45a i rrm1 peak recovery current ? 7.5 ? t j = 25c see fig. i rrm2 ? 12 ? t j = 125c 6 v r = 480v q rr1 reverse recovery charge ? 270 ? t j = 25c see fig. q rr2 ? 1210 ? t j = 125c 7 di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current ? 400 ? t j = 25c see fig. di (rec)m /dt2 during t b ? 100 ? t j = 125c 8 thermal - mechanical characteristics parameter typ. max. units r thjc junction-to-case ? 1.2 wt weight 10.9 ? g c/w v f forward voltage ? ? 1.37 i f = 22.5a, t j = -55c see fig. 1 ? ? 1.47 i f = 22.5a, t j = 25c ? ? 1.81 i f = 45a, t j = 25c ? ? 1.37 i f = 22.5a, t j = 125c v www.irf.com 3 HFA45HC60C fig. 4 - maximum thermal impedance z thjc characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 1 - maximum forward voltage drop vs. instantaneous forward current 0 100 200 300 400 500 600 reverse voltage - v r (v) 10 100 1000 j u n c t i o n c a p a c i t a n c e - c t ( p f ) t j = 25c 0 100 200 300 400 500 600 reverse voltage - v r (v) 0.01 0.1 1 10 100 1000 r e v e r s e c u r r e n t - i r ( a ) 125c 75c 25c 100c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 forward voltage drop - v f (v) 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = -55c tj = 125c tj = 25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 4 www.irf.com HFA45HC60C fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt fig. 5 - typical reverse recovery vs. di f /dt, fig. 6 - typical recovery current vs. di f /dt, 100 1000 di f / dt - ( a / s ) 50 100 150 200 250 t r r - ( n s ) v r = 480v t j = 125c t j = 25c i f = 22.5a i f = 90a i f = 45a 100 1000 di f / dt - ( a / s ) 1 10 100 i r r m - ( a ) v r = 480v t j = 125c t j = 25c i f = 22.5a i f = 90a i f = 45a 100 1000 di f / dt - ( a / s ) 100 1000 10000 q r r - ( n c ) v r = 480v t j = 125c t j = 25c i f = 22.5a i f = 90a i f = 45a 100 1000 di f / dt - ( a / s ) 10 100 1000 10000 d i ( r e c ) m / d t - ( a / s ) v r = 480v t j = 125c t j = 25c i f = 22.5a i f = 90a i f = 45a www.irf.com 5 HFA45HC60C fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f ! " ## # $!# %% # %" ## & ' ## () (( * ' " reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 ? g d s dif/dt adjust case outline and dimensions ? to-258aa 23 1 3x 2x 3.55 [.140] 13.97 [.550] 13.46 [.530] b 0.12 [.005] 1.14 [.045] 0.88 [.035] 6.85 [.270] 6.09 [.240] 21.20 [.835] 20.70 [.815] 17.65 [.695] 17.39 [.685] 4.19 [.165] 3.93 [.155] 0.50 [.020] c a b 0.25 [.010] c 37.00 [1.457] 20.40 [1.197] 17.95 [.707] 17.70 [.697] 19.05 [.750] 12.70 [.500] 1.65 [.065] 1.39 [.055] c 5.08 [.200] a not e s : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. all dimens ions are s hown in millimet ers [inche s ]. 3. cont rol l ing dime ns ion: inch. 4. conforms to jedec outline to-258aa. p in as s ignme nt s 1 = anode 1 2 = common cathode 3 = anode 2 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2013 |
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