page 1 of 5 PHA-1H-D + 50 ? 0.05 to 6 ghz the big deal ? ultra high ip3 ? broadband high dynamic range without external matching components product overview PHA-1H-D+ (rohs compliant) is an advanced wideband amplifer die fabricated using e-phemt technol - ogy and offers extremely high dynamic range over a broad frequency range and with low noise fgure. in addition, the PHA-1H-D+ has good input and output return loss over a broad frequency range without the need for external matching components and has demonstrated excellent reliability. feature advantages broad band: 0.05 to 6.0 ghz broadband covering primary wireless communications bands: cellular, pcs, lte, wimax extremely high ip3 versus dc power consumption 40.4 dbm typical at 2ghz the PHA-1H-D+ matches industry leading ip3 performance relative to device size and power consumption. the combination of the design and e-phemt structure provides enhanced linearity over a broad frequency range as evidence in the ip3 being typically 20 db above the p 1db point. this feature makes this amplifer ideal for use in: ? driver amplifers for complex waveform up converter paths ? drivers in linearized transmit systems ? secondary amplifers in ultra high dynamic range receivers no external matching components required mini-circuits PHA-1H-D+ provides good input and output return loss of 10-23 db up to 4 ghz without the need for any external matching components low noise figure: 2.6db typ. up to 4 ghz 3.4db typ. up to 6 ghz a unique feature of the PHA-1H-D+ which separates this design from all competitors is the low noise fgure performance in combination with the high ip3 resulting in high dynamic range. low juction temperature tj=115c at 85c lead temperature and 135c at 105c lead temperature results in excellent reliability* key features * measured in industry standard sot-89 package. ultra high dynamic range monolithic amplifer die notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 2 of 5 product features ? high ip3, 40.4 dbm typ. at 2.4 ghz ? gain, 13.8 db typ. at 2 ghz ? high pout, p1db 22 dbm typ. at 2 ghz ? low noise fgure, 2.2 db @2 ghz ? no external matching components required rev. or m163053 PHA-1H-D+ mcl ny 170928 general description PHA-1H-D+ (rohs compliant) is an advanced wideband amplifer die fabricated using e-phemt technology and offers extremely high dynamic range over a broad frequency range and with low noise fgure. in addition, the PHA-1H-D+ has good input and output return loss over a broad frequency range without the need for external matching components and has low thermal resistance. typical applications ? base station infrastructure ? portable wireless ? catv & dbs ? mmds & wireless lan ? lte PHA-1H-D + pad# function description 1 rf-in rf input pad. this pad requires the use of an exter - nal dc blocking capacitor chosen for the frequency of operation 3 rf-out & dc-in rf output pad and bias pad. dc voltage is present on this pad, therefore, a dc blocking capacitor is necessary for proper operation. an rf choke is needed to feed dc bias without loss of rf signal due to the bias connection. 2,4 gnd connections to ground. bottom of die. rf-in rf-out and dc-in gnd simplifed schematic and pad description 50 ? 0.05 to 6 ghz bonding pad position 0 l1 l3 l4 l5 0 h4 l2 h3 h1 h5 h2 1 2 3 4 note: 1. bond pad material - gold 2. bottom of die - gold plated dimensions in m, typical l1 l2 l3 l4 l5 h1 h2 h3 h4 h5 thickness bond pad size 86 156 453 479 750 85 114 422 444 530 750 75 x 75 ultra high dynamic range monolithic amplifer die notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 5 PHA-1H-D + parameter ratings operating temperature (ground lead) -40c to 105c operating current at 5v 210 ma power dissipation 1 w input power (cw) 24 dbm dc voltage on rf-out pad 6 v 2. permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. absolute maximum ratings 2 1. measured on mini-circuits characterization test board tb-313, dut packaged in industry standard sot-89 package. see characterization test circuit (fig. 1) electrical specifcations at 25c, unless noted parameter condition (ghz) vd=5.0v 1 units min. typ. max. frequency range 0.05 6.0 ghz gain 0.05 17.7 db 0.8 15.9 2.0 13.8 3.0 12.1 4.0 10.9 6.0 9.6 input return loss 0.05 11.9 db 0.8 18.2 2.0 12.5 3.0 10.8 4.0 10.3 6.0 8.1 output return loss 0.05 14.2 db 0.8 22.9 2.0 19.7 3.0 17.1 4.0 15.5 6.0 13.7 reverse isolation 2.0 19.6 db output power @1 db compression 0.05 22.1 dbm 0.8 21.8 2.0 22.6 3.0 22.2 4.0 22.5 6.0 22.0 output ip3 0.05 39.6 dbm 0.8 40.6 2.0 40.4 3.0 40.8 4.0 41.4 6.0 41.0 noise fgure 0.5 1.7 db 1.0 1.8 2.0 2.2 3.0 2.4 4.0 2.6 6.0 3.4 device operating voltage 4.8 5.0 5.2 v device operating current 132 165 ma device current variation vs voltage 0.057 ma/mv thermal resistance, junction-to-ground lead at 88c 36.1 c/w monolithic e-phemt mmic amplifer die notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 4 of 5 characterization test circuit PHA-1H-D + fig 1. block diagram of test circuit used for characterization. (dut, die packaged in sot-89 package, soldered on mini-circuits characterization test board tb-313) gain, return loss, output power at 1db compression (p1 db) , output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain and return loss: pin= -25dbm. output ip3 (oip3): two tones, spaced 1 mhz apart, 5 dbm/tone at output. rf-in rf-out 3 vcc (supply v oltage) blk-18+ bias-t ee zx85-12g-s+ 1 dut tb-313 2,4 +5v assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic e-phemt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. note: ground bond wires are optional. monolithic e-phemt mmic amplifer die notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
page 5 of 5 performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 5,10,50,100 kgd* medium ? , partial wafer: kgd*<5k large ? , full wafer PHA-1H-Dg+ PHA-1H-Dp+ PHA-1H-Df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env80 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp d. mini-circuits does not warrant the accuracy or completeness of the information, text, graphics and other items contained within this document and same are provided as an accommodation and on an as is basis, with all faults. e. purchasers of this part are solely responsible for proper storing, handling, assembly and processing of known good dice (including, without limitation, proper esd preventative measures, die preparation, die attach, wire bond ing and related assembly and test activities), and mini-circuits assumes no responsibility therefor or for environmental effects on known good dice. f. mini-circuits and the mini-circuits logo are registered trademarks of scientifc components corporation d/b/a mini- circuits. all other third-party trademarks are the property of their respective owners. a reference to any third-party trademark does not constitute or imply any endorsement, affliation, sponsorship, or recommendation by any such third-party of mini-circuits or its products. esd rating** human body model (hbm): class 1b (pass 500v) in accordance with ansi/esd stm 5.1 - 2001 additional detailed technical information additional information is available on our dash board. *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. ** tested in industry standard sot-89 package. PHA-1H-D + monolithic e-phemt mmic amplifer die notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com
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