? 2005 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces t j = 25 c1 a v ge = 0 v t j = 125 c 200 a i ges v ce = 0 v, v ge = 20 v 200 na v ce(sat) v ge = 15v, i c = 60 a 1.4 1.8 v i c = 120 a 1.7 v trench igbt symbol test conditions maximum ratings v ces t j = 25 c to 150 c 300 v v gem 30 v i c25 t c = 25 c, igbt chip capability 120 a i c90 t c = 90 c75a i cm t j 150 c, tp < 300 s 200 a i c(rms) lead current limit 75 a ssoa v ge = 15 v, t vj = 150 c, r g = 20 ? i cm = 100 a (rbsoa) clamped inductive load, v ce < 300 v p c t c = 25 c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s plastic body for 10s 260 c m d mounting torque (to-3p) 1.3/10 nm/lb.in. weight to-263 3 g ds99361(03/05) features ? international standard packages ? trench gate construction for low v ce(sat) - for minimum on-state conduction losses ? mos gate turn-on - drive simplicity applications ? pdp screen drivers ? ac motor speed control ? dc servo and robot drives ? dc choppers ? uninterruptible power supplies (ups) ? switch-mode and resonant-mode power supplies ? capacitor discharge IXGA9289 v ces = 300 v i c25 = 120 a v ce(sat)(typ) = 1.4 v advanced technical information for plasma display applications (development type ixga_120n30tc) g = gate d = drain s = source tab = drain to-263 (i xga ) g s (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXGA9289 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60 a v ce = 10 v 60 85 s pulse test, t 300 s, duty cycle 2 % c ies 5600 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 160 pf c res 38 pf q g 134 nc q ge i c = 60 a, v ge = 15 v, v ce = 0.5 v ces 34 nc q gc 29 nc t d(on) 33 ns t ri 43 ns t d(off) 73 ns t fi 24 ns t d(on) 32 ns t ri 72 ns t d(off) 84 ns t fi 40 ns r thjc 0.5 k/w r thck 0.25 k/w resistive load, t j = 25 c i c = 60 a, v ge = 15 v v ce = 150 v, r g = r off = 5 ? resistive load, t j = 125 c i c = 60 a, v ge = 15 v v ce = 150 v, r g = r off = 5 ? ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 to-263 aa outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029
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