1 7 - elm341503a - n g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient r ja 62.5 c /w parameter symbol limit unit note q2 q1 schottky drain - s ource voltage vds 3 0 3 0 v gate - s ource v oltag e vgs 20 20 v conti nuous drain current t a = 25 c id 9 8 a t a = 70 c 7 6 pulsed d rain current idm 35 30 a 1 avalanche current ias 29 21 a avalanche energy l=0.1mh eas 43 23 mj reverse current vr=25v ir 0.05 ma forward voltage if=1a vf 0.45 v power dissipation t c = 25 c pd 2.0 w t c = 70 c 1.28 j unction and storage temperature range tj , tstg - 55 to 150 c elm341503a - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. q2 q1 ? vds = 3 0v ? vds = 3 0v ? id = 9 a (vgs = 10 v) ? id = 8 a (vgs = 10 v) ? rds (on) < 15.8 m (vgs = 10 v) ? rds (on) <2 1 . 0 m (vgs =10 v) ? rds (on) < 20.0 m (vgs =4. 5v) ? rds (on) <3 2.0 m (vgs=4. 5v) dual n-channel mosfet with schottky diode 1 2 3 4 5 6 7 8 q2 q1 pin configuration c ircuit pin no. pin name 1 drain 1 2 drain 1 3 gate2 4 source 2 5 drain2/ source 1 6 drain 2/ source 1 7 drain 2/ source 1 8 gate 1 4 3 2 1 5 6 7 8 so p - 8 (top vi ew) note : 1 . pulsed width limited by maximum junction temperature. t a = 25 c . u nless otherwise noted.
2 7 - elm341503a - n electrical characteristics(q2) parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 24 v, vgs = 0v 1 a vds = 20 v, vgs = 0v, t a = 12 5 c 10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.0 1.7 3.0 v on s tate drain current i d ( on ) vgs = 1 0 v, vds = 5v 3 5 a 1 static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 9 a 10.5 15.8 m 1 vgs =4. 5v, id = 7 a 14.2 20.0 forward transconductance gfs vds = 10 v, id = 9 a 25 s 1 diode forward voltage vsd i f = 9 a , vgs = 0v 0.7 v 1 max.body-diode continuous current is 2.8 a dynamic parameters input capacitance c iss n-channel vgs = 0v, vds = 1 5 v, f = 1mh z 1040 pf output capacitance c oss 295 pf reverse transfer capacitance c r ss 139 pf gate resistance rg vgs = 0v, vds = 0 v, f = 1mh z 1.5 switching parameters total gate charge (vgs=10v) q g vgs = 10 v, vds = 1 5 v, id = 9 a 20.0 nc 2 total gate charge (vgs=4.5v) 9.0 nc 2 gate - s ource charge q gs 3.5 nc 2 gate - d rain charge q gd 3.5 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 1 5 v id = 1 a, rgen = 6 18 ns 2 turn - o n rise t ime t r 12 ns 2 turn - o ff delay time t d ( of f ) 40 ns 2 turn - o ff fall t ime t f 8 ns 2 body diode reverse recovery time t rr i f = 9 a, d i f/dt=100a/ s 15 ns body diode reverse recovery charge qrr 6 nc note : 1. pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . dual n-channel mosfet with schottky diode t a = 25 c . u nless otherwise noted.
3 7 - elm341503a - n typical electrical and thermal characteristics (q2) rev 0.9 4 oct - 28 - 2009 dual n - channel enhancement mode field effect transist or p d1503yvs sop - 8 halogen - free & lead - free niko - sem 0 2 4 6 8 10 0 4 8 12 16 20 i d =9a v ds =15v qg , total gate charge source - drain diode forward voltage v sd , source - to - drain voltage(v) typical characteristics: q2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 r ds(on) w v gs =10v i d =9a r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w ciss coss crss 0.00e+00 3.00e+02 6.00e+02 9.00e+02 1.20e+03 1.50e+03 0 5 1 0 1 5 2 0 2 5 3 0 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e+02 1.0e+03 0.6 0.5 0.4 0.3 0.2 0.1 0.7 t j =25 c t j =150 c output characteristics i d , drain - to - source current(a) transfer characteristics i d , drain - to - source c urrent(a) v g s , gate - to - source voltage(v) v d s , drain - to - source voltage(v) on - resistance vs temperature r ds(on) on - resistance(ohm) t j , junction temperature( ? c) capacitance characteristic c , capacitance(pf) v d s , drain - to - source voltage(v) gate charge characteristics characteristics v gs , gate - to - source volt age(v) i s , source c urrent(a) 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t j =125 c t j =25 c t j =-20 c 0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 v gs = 10v v gs = 4.5v v gs = 3v dual n-channel mosfet with schottky diode
4 7 - elm341503a - n rev 0.9 5 oct - 28 - 2009 dual n - channel enhancement mode field effect transist or p d1503yvs sop - 8 halogen - free & lead - free niko - sem single pluse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 note 1.duty cycle, d= t1 / t2 2.rth j a = 62.5 o c /w 3.t j - t a = p*rth j c (t) 4.rth j a (t) = r(t)*rth j a 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 single pulse r ja = 62.5 c/w t a =25 c 1m s 100us 10s 1s dc 100m s 10m s 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.v gs = 10v 2.t a =25 c 3.r ja = 62.5 c/w 4.single pulse operation in this area is lim ited by r ds(on) safe operating area single pulse maximum power dissipation i d , drain current(a) power(w) single pulse time(s) v d s , drain - to - source voltage(v) t ransient thermal response curve r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[se c] dual n-channel mosfet with schottky diode
5 7 - elm341503a - n electrical characteristics(q1) parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id = 25 0 a , vgs = 0v 3 0 v zero g ate voltage drain current idss vds = 24 v, vgs = 0v -1 a vds = 20 v, vgs = 0v, t a = 12 5 c -10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id = 25 0 a 1.0 2.0 3.0 v on s tate drain current i d ( on ) vgs = 1 0 v, vds = 5v 3 0 a 1 static drain - s ource on - r esistance r d s (o n ) vgs = 10 v, i d = 9 a 15.8 21.0 m 1 vgs =4. 5v, id = 6 a 25.6 32.0 forward transconductance gfs vds = 10 v, id = 7 a 15 s 1 diode forward voltage vsd i f = 7 a , vgs = 0v 1.0 v 1 max.body-diode continuous current is 2.0 a dynamic parameters input capacitance c iss vgs = 0v, vds = 1 5 v, f = 1mh z 560 pf output capacitance c oss 160 pf reverse transfer capacitance c r ss 84 pf gate resistance rg vgs = 0v, vds = 0 v, f = 1mh z 2.0 switching parameters total gate charge (vgs=10v) q g vgs = 10 v, vds = 1 5 v, id = 9 a 11 .0 nc 2 total gate charge (vgs=4.5v) 5.5 nc 2 gate - s ource charge q gs 2.5 nc 2 gate - d rain charge q gd 2.5 nc 2 turn - o n delay time t d (on) vgs = 10 v, vds = 1 5 v id = 1 a, rgen = 6 19 ns 2 turn - o n rise t ime t r 8 ns 2 turn - o ff delay time t d ( of f ) 39 ns 2 turn - o ff fall t ime t f 6 ns 2 body diode reverse recovery time t rr i f = 7 a, d i f/dt=100a/ s 20 ns body diode reverse recovery charge qrr 12 nc note : 1. pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . dual n-channel mosfet with schottky diode t a = 25 c . u nless otherwise noted.
6 7 - elm341503a - n typical electrical and thermal characteristics (q1) rev 0.9 6 oct - 28 - 2009 dual n - channel enhancement mode field effect transist or p d1503yvs sop - 8 halogen - free & lead - free niko - sem 0 2 4 6 8 10 0 3 6 9 12 15 i d =9a v ds =15v qg , total gate charge source - drai n diode forward voltage v sd , source - to - drain voltage(v) typical characteristics: q 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 r ds(on) w v gs =10v i d =7a r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w r ds(on) w ciss coss crss 0.00e+00 2.00e+02 4.00e+02 6.00e+02 8.00e+02 1.00e+03 0 5 1 0 1 5 2 0 2 5 3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.0e+01 1.0e+00 1.0e-01 1.0e-02 1.0e-03 1.0e-04 1.0e+02 1.0e+03 0.0 t j =25 c t j =150 c output characteristics i d , drain - to - source current(a) transfer characteristics i d , drain - to - source current(a) v g s , gate - to - source voltage(v) v d s , drain - to - source voltage(v) on - resistance vs temperature r ds(on) on - resistance(ohm) t j , junction temperature( ? c) capacitance characteristic c , capacitance(pf) v d s , drain - to - source voltage(v) gate charge characteristics characteristics v gs , gate - to - source voltage(v) i s , source current(a) t j =125 c 0 5 10 15 20 25 t j =-20 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t j =25 c 4.0 0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 v gs = 10v v gs = 4.5v v gs = 3v dual n-channel mosfet with schottky diode
7 7 - elm341503a - n rev 0.9 7 oct - 28 - 2009 dual n - channel enhancement mode field effect transist or p d1503yvs sop - 8 halogen - free & lead - free niko - sem single pluse duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1.00e-02 1.00e-01 1.00e+00 1.00e+01 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 note 1.duty cycle, d= t1 / t2 2.rth j a = 62.5 o c /w 3.t j - t a = p*rth j a (t) 4.rth j a (t) = r(t)*rth j a 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 single pulse r ja = 62.5 c/w t a =25 c 1m s 100us 10s 1s dc 100m s 10m s 0.01 0.1 1 10 100 0.1 1 10 100 note : 1.v gs = 10v 2.t =25 c 3.r ja = 3.5 c/w operation in this area is lim ited by r ds(on) note : 1.v gs = 10v 2.t a =25 c 3.r ja = 62.5 c/w 4.single pulse safe operating area single pulse maximum power dissipation i d , drain current(a) power(w) single pulse time(s) v d s , drain - to - source voltage(v) transient thermal response curve r(t) , normalized effective transient thermal resistance t 1 , square wave pulse duration[sec] dual n-channel mosfet with schottky diode
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