cwdm305p surface mount p-channel enhancement-mode silicon mosfet description: the central semiconductor cwdm305p is a high current p-channel enhancement-mode silicon mosfet, manufactured by the p-channel dmos process, and is designed for high speed pulsed amplifier and driver applications. this mosfet offers high current, low r ds(on) , low threshold voltage, and low leakage current. marking code: c503p maximum ratings: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 16 v continuous drain current (steady state) i d 5.3 a maximum pulsed drain current, tp=10s i dm 21.2 a power dissipation p d 2.0 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 62.5 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =30v, v gs =0 1.0 a bv dss v gs =0, i d =250a 30 v v gs(th) v gs =v ds , i d =250a 1.0 3.0 v r ds(on) v gs =10v, i d =2.7a 0.066 0.072 r ds(on) v gs =5.0v, i d =2.7a 0.077 0.083 g fs v ds =5.0v, i d =5.3a 11 s c rss v ds =10v, v gs =0, f=1.0mhz 50 60 pf c iss v ds =10v, v gs =0, f=1.0mhz 500 590 pf c oss v ds =10v, v gs =0, f=1.0mhz 60 150 pf q g(tot) v dd =15v, v gs =5.0v, i d =5.3a 4.7 7.0 nc q gs v dd =15v, v gs =5.0v, i d =5.3a 1.4 2.1 nc q gd v dd =15v, v gs =5.0v, i d =5.3a 1.7 2.5 nc t on v dd =15v, i d =5.3a, r g =10 7.0 ns t off v dd =15v, i d =5.3a, r g =10 8.0 ns features: ? low r ds(on) (83m max @ v gs =5.0v) ? high current (i d =5.3a) applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment soic-8 case r4 (23-august 2012) www.centralsemi.com
cwdm305p surface mount p-channel enhancement-mode silicon mosfet lead code: 1) source 5) drain 2) source 6) drain 3) source 7) drain 4) gate 8) drain marking code: c503p soic-8 case - mechanical outline pin configuration suggested mounting pads (dimensions in mm) www.centralsemi.com r4 (23-august 2012)
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