dfnwb2*2-6l -a plastic-encapsulate mosfets CJMP06 p-channel power mosfet feature z featuring a mosfet and schottky diode z independent pinout to each device to ease circuit design z ultra low v f schottky applications z li-ion battery charging z high side dc-dc conversion circuits z high side device for small brushless dc motors z power managemnet in portable , battery powered products d marking: tape drawing (unit : mm) mosfet maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current i d -2 a power dissipation p d 0.7 w thermal resistance from junction to ambient r ja 178 /w storage temperature t j 150 junction temperature t stg -55 ~+150 dfnwb2*2-6l -a pin 1 front back k 1 2 3 6 5 4 a n/c d k g s 1 of 3 sales@zpsemi.com www.zpsemi.com CJMP06 b,nov,2012
mosfet electrical characteristics (t a =25 symbol test condition min typ max unit on/off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -20 gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -0.4 -1 v gate-body leakage current i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =-20v, v gs =0v -1 a v gs =-4.5v, i d =-2.8a 110 drain-source on-state resistance (note 1) r ds(on) v gs =-2.5v, i d =-2.0a 150 m ? forward transconductance (note 1) g fs v ds =-10v, i d =-2.7a 5.5 s charges , capacitances and gate resistance input capacitance (note 2) c iss 480 output capacitance (note 2) c oss 46 reverse transfer capacitance (note 2) c rss v ds =-15v,v gs =0v,f =1mhz 10 pf total gate charge q g 7.2 gate-source charge q gs 2.2 gate-drain charge q gd v ds =-6v,v gs =-4.5v,i d =-2.8a 1.2 nc switching times (note2) turn-on delay time t d (on) 38 rise time t r 25 turn-off delay time t d(off) 43 fall time t f v ds =-6v, r l =6 ? , v gs =-4.5v,r gen =6 ? 5 ns source-drain diode characteristics forward on voltage (note1) v sd v gs =0v, i s =-1a -1.4 v notes: 1. pulse test : pulse width 300s, duty cycle 2 %. 2. these parameters have no way to verify. schottky diode maximum ratings (t a =25 parameter symbol value unit peak repetitive reverse voltage v rrm 20 dc blocking voltage v r 20 v average rectified forward current i f 1 a schottky diode electrical characteristics (t a =25 symbol test condition min typ max unit i f =0.1a 0.4 i f =0.5a 0.5 forward voltage v f i f =1a 0.575 v r =20 v 15 reverse current i r v r =10 v 5 a 2 of 3 sales@zpsemi.com www.zpsemi.com CJMP06 b,nov,2012
-0 -1 -2 -3 -0 -1 -2 -3 -4 -5 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -0.01 -0.1 -1 -0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4 -5 50 100 150 200 -0 -3 -6 -9 -12 -15 -18 80 100 120 140 160 180 0.2 0.3 0.4 0.5 0.6 1 0 5 10 15 20 0.1 1 10 ta=25 o c pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) 0.1 -4 ta=25 o c pulsed -0.3 -0.03 v sd i s ?? source current i s (a) source to drain voltage v sd (v) v gs =-3.5v,-3v,-2.5v,-2.2v,-2v,-1.8v v gs =-1.6v v gs =-1.4v v gs =-1.2v v gs =-1.0v output characteristics drain current i d (a) drain to source voltage v ds (v) ta=25 o c pulsed v gs =-1.8v v gs =-2.5v v gs =-4.5v on-resistance r ds(on) (m ) drain current i d (a) forward characteristics i d r ds(on) ?? ta=25 o c pulsed i d =-2.1a v gs r ds(on) ?? on-resistance r ds(on) (m ) gate to source voltage v gs (v) ta=25 o c pulsed forward current i f (a) forward voltage v f (v) reverse characteristics ta=25 o c pulsed reverse current i r (ua) reverse voltage v r (v) 3 of 3 sales@zpsemi.com www.zpsemi.com CJMP06 b,nov,2012
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