AOD5T40P 400v,3.9a n-channel mosfet general description product summary v ds @ t j,max 500v i dm 15a r ds(on),max < 1.45? q g,typ 5nc e oss @ 320v 0.9 m j applications 100% uis tested 100% r g tested orderable part number form minimum order quantity package type ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and halogen free compliant ? general lighting for led and ccfl ? ac/dc power supplies for industrial, consumer, an d telecom g d s g s d g s d top view to-252 dpak bottom view AOD5T40P symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc c units junction and storage temperature range -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds maximum typical thermal characteristics parameter 5 power dissipation b absolute maximum ratings t a =25c unless otherwise noted 30 v maximum units mj dv/dt w w/c t c =25c t c =100c continuous drain current repetitive avalanche energy c single pulsed avalanche energy h v 2500 400 50 v/ns parameter drain-source voltage AOD5T40P to-252 tape & reel i d a 5 15 13 gate-source voltage a mosfet dv/dt ruggedness peak diode recovery dv/dt c mj 108 3.9 300 0.4 derate above 25 c p d 52 pulsed drain current c 2.5 t c =25c avalanche current c c/w 45 55 maximum junction-to-ambient a,d maximum junction-to-case d,f c/w c/w 2 2.4 maximum case-to-sink a - 0.5 rev.1.0: march 2014 www.aosmd.com page 1 of 6
symbol min typ max units 400 500 bv dss / ?tj 0.39 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 4.2 5 v r ds(on) 1.2 1.45 ? g fs 1.9 s v sd 0.8 1 v i s 3.9 a i sm 15 a c iss 273 pf c oss 16 pf c o(er) 18 pf c o(tr) 30 pf c rss 1.5 pf r g 2.3 ? q g 5 9 nc q gs 1.8 nc q gd 1.4 nc v ds =40v, i d =1a v gs =10v, i d =1a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz static drain-source on-resistance bv dss drain-source breakdown voltage i d =250a, v gs =0v, t j =25c v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v i dss zero gate voltage drain current v ds =400v, v gs =0v m a v ds =320v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related i effective output capacitance, time related j v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 320v, f=1mhz v ds =0v, v gs =30v gate-body leakage current v gs =10v, v ds =320v, i d =3.9a total gate charge gate source charge gate drain charge switching parameters q gd 1.4 nc t d(on) 17 ns t r 14 ns t d(off) 18 ns t f 9 ns t rr 172 ns q rr 1.1 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =3.9a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =200v, i d =3.9a, r g =25 w i f =3.9a,di/dt=100a/ m s,v ds =100v turn-on rise time turn-on delaytime gate drain charge a. the value of r qja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c in a to252 package, using junction-to-case therm al resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. d. the r q ja is the sum of the thermal impedance from junction t o case r qjc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. h. l=60mh, i as =1.9a, v dd =150v, r g =10 ?, starting t j =25 c. i. c o(er) is a fixed capacitance that gives the same stored e nergy as c oss while v ds is rising from 0 to 80% v (br)dss. j. c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss. rev.1.0: march 2014 www.aosmd.com page 2 of 6
typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 10 r ds(on) ( w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =1a v gs =10v 0 1.5 3 4.5 6 7.5 0 5 10 15 20 25 30 i d (a) v ds (volts) figure 1: on-region characteristics v gs =5.5v 6v 6.5v 10v 8v 7v 0.1 1 10 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics -55 c v ds =40v 25 c 125 c 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temperature rev.1.0: march 2014 www.aosmd.com page 3 of 6
typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0.1 1 10 100 1000 0.1 1 10 100 1000 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =320v i d =3.9a 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 0.4 0.8 1.2 1.6 2 0 100 200 300 400 500 eoss(uj) v ds (volts) figure 9: coss stored energy e oss 0 1 2 3 4 5 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 12: current de-rating (note f) area (note f) 0 12 24 36 48 60 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 11: power de-rating (note b) rev.1.0: march 2014 www.aosmd.com page 4 of 6
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z q jc normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.4 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) figure 14: single pulse power rating junction-to- ambient (note g) t j(max) =150 c t a =25 c 0 200 400 600 800 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 13: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.1.0: march 2014 www.aosmd.com page 5 of 6
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs id vgs rg dut - + vdc vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss di/dt i rm rr vdd vdd q = - idt ar t rr rev.1.0: march 2014 www.aosmd.com page 6 of 6
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