20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistors telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SB502 description ? collector-emitter breakdown voltage- : v(br)ceo= -sov(min) ? high power dissipation- : pc=25w(max)@tc=25c applications ? designed for audio power amplifier and regulator applications. absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic ie pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous emitter current-continuous collector power dissipation @ta=25'c collector power dissipation @tc=25"c junction temperature storage temperature value -110 -80 -8 -3 3 1.5 25 150 -65-150 unit v v v a a w "c 'c pin 1.base 2. emitter 3. collector (case) to-66 package dim a b c. d (j h k l n q u v nun mih 31.40 17.30 6.70 0.70 1.40 t?ax 31.80 17.70 7.10 0.90 1.60 5.08 2.54 9.80 14.70 12.40 3.60 24.30 3.50 10.20 14.90 12.60 3.80 24.50 3,70 n.i semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is helieved to be both accurate and reliable at the time of going to press. i lowevcr. nj semi-conduetors assumes no responsibility for any errors or omissions discovered in its use. ' nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistors 2SB502 electrical characteristics tj=25"c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vee(sat) icbo iebo hpe-1 flfe-2 cob parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance conditions lc=-0.1a; ib=0 lc= -2ma; ie= 0 !e=-10ma; lc=0 lc= -3a; ib= -0.3a lc= -3a; ib= -0.3a vcb= -50v; ie= 0 veb= -8v; lc= 0 lc= -0.5a; vce= -5v lc= -2.5a; vce= -5v le=0;vcb=-10v;f= 1mhz min -80 -110 -8 30 15 typ. 200 max -1.5 -1.8 -10 -100 280 unit v v v v v ma u a pf hfe classifications r 30-70 0 50-140 y 100-280
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