parameter symbol value unit collector-base voltage v c b o 100 v collector-emitter voltage v c e o 100 v emitter-base voltage v e b o 6.0 v collector current i c 3.0 a base current i b 1.0 a total dissipation at p t o t 20 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c mjd 31c / 32c description parameter symbol test conditions min. typ. max. unit collector cut-off current i c e o v c b = 100v, i e =0 10 ua emitter cut-off current i e b o v e b = 5.0v, i c =0 10 ua collector-emitter sustaining voltage v c e o i c = 10ma, i b =0 100 v dc current gain h f e ( 1 ) v c e = 4.0v, i c = 1.0a 30 h f e ( 2 ) v c e = 4.0v, i c = 3.0a 10 60 collector-emitter saturation voltage v c e ( s a t ) i c = 3.0a,i b = 375ma 1.2 v base-emitter on voltage v b e ( o n ) v c e = 4.0v,i c = 3.0a 1.8 v current gain bandwidth product f t v c e = 10v,i c = 500ma 3.0 mhz complementary silicon power ttransistors product specification it is intented for use in power amplifier and switching applications. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o to-252 1 b 2 c 3 e tiger electronic co.,ltd
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