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? 2015 microchip technology inc. 20005462b-page 1 features hysteretic control with high-side current sensing wide input-voltage range: 4.5 to 40v >90% efficiency typical 5% led current accuracy up to 2.0mhz switching frequency adjustable constant led current analog or pwm control signal for pwm dimming over-temperature protection -40oc to +125oc operating temperature range applications low-voltage industrial and architectural lighting general purpose constant current source signage and decorative led lighting indicator and emergency lighting description hv9919b is a pulse-width modulation (pwm) control- ler ic designed to drive high-brightness leds using a buck topology. it operates fr om an input voltage of 4.5 to 40vdc and employs hyster etic control, with a high- side current sense resistor, to set the constant output current. set the operating frequency range by selecting the proper inductor. operation at high switching frequency is possible since the hysteret ic control maintains accu- racy even at high frequencies. this permits the use of small inductors and capacitors, minimizing space and cost in the overall system. led brightness control is achieved with pwm dimming from an analog or pwm input signal. unique pwm cir- cuitry allows true constant color with a high dimming range. the dimming frequency is programmed using a single external capacitor. hv9919b comes in a small, 8-lead dfn package and is ideal for industrial and general lighting applications. package type see ta b l e 2 - 1 for pin information 8-lead dfn 87 6 5 12 3 4 cs vin ramp adim gate gnd vdd dim gnd hv9919b hysteretic, buck, high brightness led driver with high-side current sensing downloaded from: http:///
hv9919b 20005462b-page 2 ? 2015 microchip technology inc. block diagram typical application circuit current sense comparator uvlo comparator gate driver vin vdd cs ramp adim gnd dim gate hv9919b pwm ramp 0.1~1.9v - + + - bandgap ref + - regulator c in 0 - 2.0v hv9919b vin vdd gate gnd csramp adim dim r sense l downloaded from: http:///
? 2015 microchip technology inc. 20005462b-page 3 hv9919b 1.0 electrical characteristics absolute maximum ratings ? v in to gnd ......................................................................................................................... ........................-0.3v to +45v v dd to gnd......................................................................................................................... ......................-0.3v to +6.0v gate, ramp, dim, adim to gnd ................................................................................................... ..........-0.3v to +v dd cs to v in ............................................................................................................................... ....................-1.0v to +0.3v continuous total power dissipation (t a = 25.c) ..................................................................................................... 1.6w operating temperature range.................................................................................................... ............ -40c to +125c junction temperature ........................................................................................................... ................................+150c storage temperature range ...................................................................................................... ............. -65c to +150c ? notice: stresses above those listed under maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. exposure to maximum rating conditions for extended perio ds may affect devi ce reliability. table 1-1: electrical characteristics (sheet 1 of 2) electrical specifications: v in =12v, v dim = v dd , v ramp = gnd, c vdd = 1.0 f, r cs = 0.5 ? , t a = t j = -40c to +125c, unless otherwise noted. ( note 1 ) parameter symbol min typ max units conditions input dc supply voltage range v in 4.5 - 40 v dc input voltage internally regulated voltage v dd 4.5 - 5.5 v v in = 6.0 to 40v supply current i in - - 1.5 ma gate open shutdown supply current i in, sdn - - 900 a dim< 0.7v current limit i in, lim -1 1- ma v in = 4.5v, v dd = 0v -5 . 5- v in = 4.5v, v dd = 4.0v switching frequency f sw --2 . 0m h z C v dd undervoltage lockout thresh- old uvlo - - 4.5 v v dd rising v dd undervoltage lockout hysteresis ? uvlo - 500 - mv v dd falling sense comparator sense voltage threshold high v cs(hi) -2 3 0-m v ( v in - v cs ) rising sense voltage threshold low v cs(lo) -1 7 0-m v ( v in - v cs ) falling average sense voltage v cs(avg) 186 200 214 mv v cs(avg) = 0.5(v cs(hi) + v cs(lo) ) propagation delay to output high t dpdh -7 0-n s falling edge of (v in - v cs ) = v rs(lo) - 70mv propagation delay to output low t dpdl -7 0-n s rising edge of (v in - v cs ) = v rs(hi) + 70mv current-sense input current i cs --1 . 0 a ( v in - v cs ) = 200mv current-sense threshold hysteresis v cs(hys) 15 56 98 mv v cs(hys) = v cs(hi) - v cs(lo) dim input pin dim input high voltage v ih 2.2 - - v C pin dim input low voltage v il --0 . 7v C turn-on time t on -1 0 0-n s dim rising edge to v gate = 0.5 x v dd , c gate = 2.0nf turn-off time t off -1 0 0-n s dim falling edge to v gate = 0.5 x v dd , c gate =2.0nf downloaded from: http:///
hv9919b 20005462b-page 4 ? 2015 microchip technology inc. note 1: specification is obtained by characterization and is 100% tested at t a = 25c. 2: specification is obtained by ch aracterization and not 100% tested gate driver gate current, source i gate 0.3 0.5 - a v gate = gnd, ( note 2 ) gate current, sink 0.7 1.0 - a v gate = v dd , ( note 2 ) gate output rise time t rise -4 05 5n s c gate = 2.0nf gate output fall time t fall -1 72 5n s c gate = 2.0nf gate high output voltage v gate(hi) v dd -0.5 - - v i gate = 10ma gate low output voltage v gate(lo) --0 . 5v i gate = -10ma over-temperature protection over temperature trip limit t ot 128 140 - oc ( note 2 ) temperature hysteresis ? t hyst -6 0-o c ( note 2 ) analog control of pwm dimming dimming frequency f ramp 114 - 308 hz c ramp = 47nf 529 - 1380 c ramp = 10nf ramp threshold, low v low -0 . 1-vC ramp threshold, high v high 1.8 - 2.1 v C adim offset voltage v os -35 - +35 mv C temperature specifications electrical specifications: unless otherwise specified, for all specifications t a =t j = +25c parameter symbol min typ max units conditions temperature ranges operating temperature -40 125 c storage temperature -65 C 150 c package thermal resistances thermal resistance, dfn ja C6 0C c / w mounted on fr-4 board, 25 mm x 25 mm x 1.57 mm table 1-1: electrical characteristics (sheet 2 of 2) electrical specifications: v in =12v, v dim = v dd , v ramp = gnd, c vdd = 1.0 f, r cs = 0.5 ? , t a = t j = -40c to +125c, unless otherwise noted. ( note 1 ) parameter symbol min typ max units conditions downloaded from: http:///
? 2015 microchip technology inc. 20005462b-page 5 hv9919b 2.0 pin description the locations of the pins are listed in features . table 2-1: pin description pin # symbol description 1c s current sense input. senses led string current. 2 vin input voltage 4.5 to 40v dc. 3 ramp analog pwm dimming ramp output. 4a d i m analog 0~2.0v signal input for analog control of pwm dimming. 5 dim pwm signal input. 6v d d internally regulated supply voltage. connect a capacitor from v dd to ground. 7 gnd device ground. 8 gate drives gate of external mosfet. tab gnd must be wired to pin 7 on pcb. downloaded from: http:///
hv9919b 20005462b-page 6 ? 2015 microchip technology inc. 3.0 application information hv9919b is a step-down, constant current, high- brightness led (hb led) driver. the device operates from a 4.5 to 40v input voltage range and provides the gate drive output to an external n-channel mosfet. a high-side, current-sense resi stor sets the output cur- rent and a dedicated pwm dimming input (dim) allows for a wide range of dimming duty ratios. the pwm dim- ming could also be achieved by applying a dc voltage between 0 and 2.0v to the analog dimming input (adim). in this case, the dimming frequency can be programmed using a single capacitor at the ramp pin. the high-side current setting and sensing scheme min- imizes the number of external components while deliv- ering led current with a 8% accuracy, using a 1% sense resistor. 3.1 undervoltage lockout (uvlo) hv9919b includes a 3.7v under-voltage lockout (uvlo) with 500mv hysteresis. when v dd falls below 3.7v, gate goes low, turning off the external n-channel mosfet. gate goes high once v dd is 4.5v or higher. 3.2 5.0v regulator v dd is the output of a 5.0v regulator capable of sourc- ing 5.0 ma. bypass v dd to gnd with a 1.0 f capacitor. 3.3 dim input hv9919b allows dimming with a pwm signal at the dim input. a logic level below 0.7v at dim forces the gate output low, turning off the led current. to turn the led current on, the logic level at dim must be at least 2.2v. 3.4 adim and ramp inputs the pwm dimming scheme can be also implemented by applying an analog control signal to adim pin. if an analog control signal of 0 C 2.0v is applied to adim, the device compares this analog input to a voltage ramp to pulse-width-modulate the led current. connecting an external capacitor to ramp programs the pwm dim- ming ramp frequency. dim and adim inputs can be used simultaneously. in such a case, f pwm(max) must be selected lower than the frequency of the dimming signal at dim. the smaller dimming duty cycle of adim and dim will deter- mine the gate signal. when the analog control of pwm dimming feature is not used, ramp must be wired to gnd, and adim should be connected to v dd . one possible application of the adim feature of hv9919b may include protection of the led load from over-temperature by connecting an ntc thermistor at adim, as shown in figure 3-1 figure 3-1: ntc thermistor at adim 3.5 setting led current with external resistor r sense the output current in the led is determined by the external current sense resistor (r sense ) connected between v in and cs. disregarding the effect of the propagation delays, the sense resistor can be calcu- lated as: 3.6 selecting buck inductor l hv9919b regulates the led output current using a comparator with hysteresis, see figure 3-2 . as the cur- rent through the inductor ramps up and the voltage across the sense resistor reaches the upper threshold, the voltage at gate goes low, turning off the external mosfet. the mosfet turn s on again when the inductor current ramps down through the freewheeling diode, until the voltage across the sense resistor equals the lower threshold. use the following equation to determine the inductor value for a desired value of operating frequency f s : f pwm 1 c ramp 120k ? ? ------------------------------------------ = ntc vdd adim gnd hv9919b r sense 12 -- - v cs hi ?? v cs lo ?? + ?? i led ---------------------------------------------------- ? 200mv i led ------------------ = ? l v in v out C ?? v out f s v in ? i o -------------------------------------------------- v in v out Ct dpdl ? i o --------------------------------------------- - C = v out t dpdh ? i o ------------------------------ C downloaded from: http:///
? 2015 microchip technology inc. 20005462b-page 7 hv9919b where: and t dpdl , t dpdh are the propagation delays. the cur- rent ripple ? i in the inductor l is greater than ? i o . this ripple can be calculated from the following equa- tion: for the purpose of the pro per inductor selection, note that the maximum switchin g frequency occurs at the highest v in and v out = v in /2. figure 3-2: regulating led output 3.7 mosfet selection mosfet selection is based on the maximum input operating voltage v in , output current i led , and operat- ing switching frequency. choose a logic-level mosfet that has a higher breakdown voltage than the maxi- mum operation voltage, low r ds(on) , and low total gate charge for better efficiency. 3.8 freewheeling diode selection the forward voltage of the freewheeling diode should be as low as possible for better efficiency. a schottky diode is a good choice as long as the breakdown volt- age is high enough to withstand the maximum operat- ing voltage. the forward-current rating of the diode must be at least equal to the maximum led current. 3.9 led current ripple the led current ripple is equal to the inductor-current ripple. in cases when a lower led current ripple is needed, a capacitor can be placed across the led ter- minals. 3.10 pcb layout guidelines careful pcb layout is critical to achieve low switching losses and stable operation. use a multilayer board whenever possible for better noise immunity. minimize ground noise by connecting high-current ground returns, the input bypass capacitor ground lead, and the output filter ground lead to a single point (star ground configuration). the fa st di/dt loop is formed by the input capacitor c in , the free-wheeling diode and the mosfet. to minimize noise interaction, this loop area should be as small as possible. place r sense as close as possible to the input filter and v in . for better noise immunity, a kelvin connection is strongly recom- mended between cs and r sense . connect the exposed tab of the ic to a large-area ground plane for improved power dissipation. ? i o v cs hi ?? v cs lo ?? C r sense ---------------------------------------------- - = ? i ? i o v in v out C ?? t dpdl l -------------------------------------------------- - v out t dpdh l ------------------------------ ++ = tt i led v dim v rs(hi) r sense v rs(lo) r sense t dpdl t dpdh t s = 1/f s i i o downloaded from: http:///
hv9919b 20005462b-page 8 ? 2015 microchip technology inc. 4.0 packaging information 4.1 package marking information legend: xx...x product code or customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week 01) nnn alphanumeric traceability code pb-free jedec ? designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for product code or custom er-specific information. package may or not include the corporate logo. 3 e 3 e 8-lead dfn example nnn yyww xxxx 343 1542 9919 downloaded from: http:///
? 2015 microchip technology inc. 20005462b-page 9 hv9919b note: for the most current package drawings, see the microchip packaging specification at www.microchip.com/packaging. downloaded from: http:///
hv9919b 20005462b-page 10 ? 2015 microchip technology inc. appendix a: revision history revision a (november 2015) updated file to microchip format. revised absolute maximum ratings ? . modified values and notes in table 1-1 . added condition to temperature specifications . changed value in section 3.2 5.0v regulator . wording change in section 3.7 mosfet selec- tion . minor text changes throughout. revision b (december 2015) updated revision history. downloaded from: http:///
? 2015 microchip technology inc. 20005462b-page 11 hv9919b product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . device: hv9919b = hysteretic, buck, high brightness led driver with high-side current sensing package: k7 = 48-lead dfn environmental g = lead (pb)-free/rohs-compliant package media type: (blank) = 3000/reel examples: a) HV9919BK7-G 8-lead dfn package, 3000/reel part no. x device x environmental x x package options media - - type downloaded from: http:///
20005462b-page 12 ? 2015 microchip technology inc. information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyers risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights unless otherwise stated. trademarks the microchip name and logo, th e microchip logo, dspic, flashflex, flexpwr, jukeblox, k ee l oq , k ee l oq logo, kleer, lancheck, medialb, most, most logo, mplab, optolyzer, pic, picstart, pic 32 logo, righttouch, spynic, sst, sst logo, superflash and uni/o are registered trademarks of microchip te chnology incorporated in the u.s.a. and other countries. the embedded control solutions company and mtouch are registered trademarks of microc hip technology incorporated in the u.s.a. analog-for-the-digital age, bodycom, chipkit, chipkit logo, codeguard, dspicdem, dspicdem.net, ecan, in-circuit serial programming, icsp, inter-chip connectivity, kleernet, kleernet logo, miwi, motorbench, mpasm, mpf, mplab certified logo, mplib, mplink, multitrak, netdetach, omniscient code generation, picdem, picdem.net, pickit, pictail, righttouch logo, real ice, sqi, serial quad i/o, total endurance, tsharc, usbcheck, varisense, viewspan, wiperlock, wireless dna, and zena are trademarks of microchip te chnology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. silicon storage technology is a registered trademark of microchip technology inc. in other countries. gestic is a registered tradem ark of microchip technology germany ii gmbh & co. kg, a subsidiary of microchip technology inc., in other countries. all other trademarks mentioned herein are property of their respective companies. ? 2015, microchip technology incorporated, printed in the u.s.a., all rights reserved. isbn: 978-1-5224-0111-7 note the following details of the code protection feature on microchip devices: microchip products meet the specification cont ained in their particular microchip data sheet. microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip products in a manner outside the operating specif ications contained in microchips data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as unbreakable. code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchips c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the companys quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperi pherals, nonvolatile memory and analog products. in addition, microchips quality system for the design and manufacture of development systems is iso 9001:2000 certified. quality management s ystem certified by dnv == iso/ts 16949 == downloaded from: http:///
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