vishay siliconix SI4322DY document number: 73860 s09-0226-rev. b, 09-feb-09 www.vishay.com 1 n-channel 30-v (d-s) mosfet with schottky diode features ? halogen-free according to iec 61249-2-21 available ? trenchfet ? power mosfet ? 100 % r g tested applications ? synchronous buck-low side - notebook - server - workstation ? synchronous rectifier-pol product summary v ds (v) r ds(on) ( ) i d (a) a q g (typ.) 30 0.0085 at v gs = 10 v 18 11.7 nc 0.0125 at v gs = 4.5 v 15 schottky and body diode product summary v ds (v) v sd (v) diode forward voltage i s (a) 30 0.4 at 2 a 5 a so-8 sd sd sd gd 5 6 7 8 top v ie w 2 3 4 1 orderin g information: SI4322DY-t1-e 3 (lead (p b )-free) SI4322DY-t 1-ge3 (lead (p b )-free and halogen-free) n -channel mosfet g s d schottky diode notes: a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 85 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 18 a t c = 70 c 15 t a = 25 c 14 b, c t a = 70 c 11 b, c pulsed drain current i dm 50 continuous source-drain diode current t c = 25 c i s 5 t a = 25 c 2.8 b, c maximum power dissipation t c = 25 c p d 5.4 w t c = 70 c 3.4 t a = 25 c 3.1 b, c t a = 70 c 2.0 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient b, d t 10 s r thja 34 40 c/w maximum junction-to-foot (drain) steady state r thjf 17 23
www.vishay.com 2 document number: 73860 s09-0226-rev. b, 09-feb-09 vishay siliconix SI4322DY notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 3.0 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 0.18 1 ma v ds = 30 v, v gs = 0 v, t j = 100 c 22 100 on -state drain current a i d(on) v ds 5 v, v gs = 10 v 30 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a 0.007 0.0085 v gs = 4.5 v, i d = 12 a 0.0095 0.012 forward transconductance a g fs v ds = 15 v, i d = 15 a 56 s dynamic b input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 1640 pf output capacitance c oss 380 reverse transfer capacitance c rss 118 total gate charge q g v ds = 15 v, v gs = 10 v, i d = 15 a 25.5 38 nc v ds = 15 v, v gs = 4.5 v, i d = 15 a 11.7 17.5 gate-source charge q gs 5.1 gate-drain charge q gd 3.6 gate resistance r g f = 1 mhz 2.3 3.5 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 3 i d ? 5 a, v gen = 4.5 v, r g = 1 24 36 ns rise time t r 84 126 turn-off delay time t d(off) 36 54 fall time t f 17 26 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 3 i d ? 5 a, v gen = 10 v, r g = 1 12 18 rise time t r 36 54 turn-off delay time t d(off) 36 54 fall time t f 711 drain-source body diode and schottky characteristics continuous source-drain diode current i s t c = 25 c 5 a pulse diode forward current a i sm 50 body diode voltage v sd i s = 2 a 0.35 0.4 v body diode reverse recovery time t rr i f = 4 a, di/dt = 100 a/s, t j = 25 c 26 40 ns body diode reverse recovery charge q rr 16 25 nc reverse recovery fall time t a 12.5 ns reverse recovery rise time t b 13.5
document number: 73860 s09-0226-rev. b, 09-feb-09 www.vishay.com 3 vishay siliconix SI4322DY typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 5 0 0.0 0.5 1.0 1.5 2.0 2.5 v gs = 10 v thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0.006 0.007 0.00 8 0.009 0.010 0 . 011 0 1020304050 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ) n o ( s d m ( e c n a t s i s e r - n o -) 0 2 4 6 8 10 0.0 5.2 10.4 15.6 20. 8 26.0 i d = 15 a ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g v ds = 10 v v ds = 20 v v ds = 15 v transfer characteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0. 8 1.2 1.6 2 . 0 012345 25 c t j = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0 440 88 0 1320 1760 2200 04 8 12 16 20 c rss c oss c iss v ds - drain-to-so u rce v oltage ( v ) ) f p ( e c n a t i c a p a c - c 0.7 0.9 1.1 1.3 1.5 1 .7 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v t j - j u nction temperat u re (c) r ) n o ( s d e c n a t s i s e r - n o - ) d e z i l a m r o n ( v gs = 4.5 v i d = 10 a
www.vishay.com 4 document number: 73860 s09-0226-rev. b, 09-feb-09 vishay siliconix SI4322DY typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage reverse current (schottky) so u rce c u rrent (a) - 0.1 1 100 v sd - so u rce-to-drain v oltage ( v ) i s 0 0.2 0.4 0.6 0. 8 1.0 10 1.2 t j = 150 c t j = 25 c 10 1 0 ) a ( re v erse i r t j - temperat u re (c) 150 125 100 75 50 25 -4 0.01 10 -1 10 -2 10 -3 0.1 - 10 v 30 v on-resistance vs. gate-to-source voltage junction-to-ambient 0.000 0.010 0.020 0.030 0.040 0 . 0 5 0 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d -) t j = 25 c t j = 125 c 0 120 200 40 8 0 ) w ( r e w o p time (s) 160 110 0.1 0.01 0.001 safe operating area 1 s 10 s dc 10 ms 100 ms 1 ms limited b y r ds(on) * t a = 25 c single p u lse * v gs minim u m v gs at w hich r ds(on) is specified 100 0.1 1 10 100 0.01 10 ) a ( t n e r r u c n i a r d - i d 0.1 v ds - drain-to-so u rce v oltage ( v ) 1
document number: 73860 s09-0226-rev. b, 09-feb-09 www.vishay.com 5 vishay siliconix SI4322DY typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 0 drain re v erse (a) i d t c - case temperat u re (c) 150 125 100 75 50 25 1 8 13 9 4 22 - power derating, junction-to-foot 0.0 1.4 2. 8 4.2 5.6 7.0 0 25 50 75 100 125 150 t c - case temperat u re (c) r ( w ) e w o p power derating, junction-to-ambient 0.0 0.4 0. 8 1.2 1.6 2.0 0 25 50 75 100 125 150 t a - am b ient temperat u re (c) r ( w ) e w o p
www.vishay.com 6 document number: 73860 s09-0226-rev. b, 09-feb-09 vishay siliconix SI4322DY typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73860 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 10 -1 100 sq u are w a v e p u lse d u ration (s) 10 1000 1 1 0.1 0.01 t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.2 0.1 0.05 0.02 d u ty cycle = 0.5 single p u lse 1. d u ty cycle, d = 2. per unit base = r thja = 8 0 c 3. t jm ? t = p dm z thja (t) t 1 t 2 4. s u rface mo u nted n otes: t 1 p dm t 2 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 1 10 10 -1 10 1 0.1 0.01 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5
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