Part Number Hot Search : 
04365 FU9120N 02201 T0805BH SRA2206 1227A LTC26 AT5660H
Product Description
Full Text Search
 

To Download 9014XLT1 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  maximum ratings symbol value unit collector-emitter voltage v ceo 45 v collector-base voltage v cbo 50 v emitter-base voltage v ebo 5v collector current-continuoun i c 100 ma thermal charateeristics symbol max unit total device dissipation fr-5 board, (1) p d 225 mw 1.8 mw/ o c thermal resistance, junction to ambient r ? ja 556 o c / w p d 300 mw 2.4 mw/ o c thermal resistance, junction to ambient r ? ja 417 o c / w junction and storage temperature t j ,t stg -55 to +150 o c rating characteristic t a =25 o c derate above 25 o c total device dissipation alumina substrate, (2) ta=25 o c derate above 25 o c general purpose transistors npn silicon feature ? complementary to 9015. ? device marking and ordering information device marking shipping 9014qlt1 14q 3000/tape&reel 9014rlt1 14r 3000/tape&reel 9014slt1 14s 3000/tape&reel 9014tlt1 14t 3000/tape&reel sot? 23 2 emitter 1 base collector 3 we declare that the material of product compliance with rohs requirements. 2012- willas electronic corp. 9014XLT1
electrical characteristics (t a =25 o c unless otherwise noted) off characteristics symbol min typ max unit collector-emitter breakdown voltage v(br) ceo 45 - - v (i c =1.0ma) emitter-base breakdown voltage v(br) ebo 5 - -v (i e =100-a) collector-base breakdown voltage v(br) cbo 50 - - v (i c =100-a) collector cutoff current (v cb =40v) i cbo - - 100 na emitter cutoff current (v eb =3v) i ebo 100 na on characteristics dc current gain (i c =1ma, v ce =5v) h fe 150 - 1000 collector-emitter saturation voltage (i c =100ma,i b =5ma) v ce - - 0.3 v note: * q r s t h fe 150~300 200~400 300~600 400~1000 characteristic 2012- willas electronic corp. general purpose transistors 9014XLT1
static characteristic base-emitter sat uration voltage collector-emitter sat uration voltage dc current gain current gain-bandwidth product 2012- willas electronic corp. general purpose transistors 9014XLT1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012- willas electronic corp. general purpose transistors 9014XLT1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)


▲Up To Search▲   

 
Price & Availability of 9014XLT1

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X