s mhop microelectronics c orp. a SMD30U50P symbol v rrm v rwm 12 v 300 unit parameter 50 50 30 c/w v v 50 working peak reverse voltage peak repetitive reverse voltage thermal characteristics product summary v rrm i o v f(max) @ 25 c 50v 30a features low profile design for smart phone charger absolute maximum ratings ( t a =25 c unless otherwise noted ) value a thermal resistance, junction-to-ambient r ja www.samhop.com.tw nov,12,2014 1 details are subject to change without notice. v mos controlled diode green product 35 a dfn 5x6 anode pins bottomside heat sink v rm dc blocking voltage v r(rms) rms reverse voltage i o average rectified output current i fsm non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load 450 mj e as non-repetitive avalanche energy (t j = 25 c,i as = 16,l = 5mh) w 38000 p arm repetitive peak avalanche energy i r(max) @ 25 c 0.55v 0.5ma t j operating temperature range t stg storage temperature range -55 to 150 -55 to 175 c c symbol unit parameter value v electrical characteristics ( t a =25 c unless otherwise specified ) forward voltage drop v f i r leakage current c t total capacitance ua pf symbol unit parameter conditions i f = 30a, t j = 25 c min typ max 0.50 v r = 50v, t j = 25 c 180 v r = 50v, f = 1mhz ideal for smt mounting low forward voltage drop high forward surge capability excellent high temperature stability 370 v i f = 30a, t j = 1 25 c 0.49 0.55 0.54 v r = 50v, t j = 1 25 c 500 100 ma a a a a k k k k ver 1.0 v i f = 20a, t j = 25 c 0.44 0.49
SMD30U50P www.samhop.com.tw nov,12,2014 2 i f(av) average forward current (a) figure 4. forward power dissipation p arm , maximum avalanche power (w) t p , pulse duration (us) figure 6. maximum avalanche power curve 10000 1000 100 0 0.1 1 10 100000 100 1000 10000 note : 1.device mounted on fr-4 substrate, 2oz copper. ver 1.0 i r , instantaneous reverse current (ua) v r , instantaneous reverse voltage (v) figure 2. typical reverse characteristics 1 0.1 0.01 1 10 20 30 40 10 100 1000 10000 c t , total capacitance v r , instantaneous reverse voltage (v) figure 3. total capacitance vs. reverse voltage 10000 1000 100 0 10 20 30 40 100000 i f , average forward current (a) t c, case temp ( c ) figure 5. forward current derating curve 10 5 0 0 25 50 75 125 15 20 25 30 100 150 100000 50 -55 c 25 c 85 c 125 c 50 f = 1mhz p d , power dissipation(w) 6 3 0 0 5 10 15 9 12 15 20 18 21 25 figure 1. typical forward characteristics i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) 10 1 0.001 0 0.1 0.2 0.3 0.4 0.5 100 0.1 0.01 0.6 125 c -55 c 25 c 85 c t a =150 c 1000000 t a =150 c 30 35 note 1 based on lead temp ( c) 35
SMD30U50P www.samhop.com.tw nov,12,2014 3 package outline dimensions dfn 5x6 0 e m l1 h d2 l e2 d3 b b1 b2 d1 d c e1 e a millimeters symbols min. nom. max. a b b1 b2 c d d1 d2 d3 e e1 e2 e h l m l1 0 1.00 1.10 0.90 0.30 0.40 0.20 0.41 0.51 0.31 0.35 0.45 0.25 0.25 0.35 0.15 6.10 6.30 5.90 5.60 5.80 6.00 3.50 ref. 4.00 ref. 5.20 5.40 5.00 4.90 5.10 4.70 3.81 3.91 3.71 1.27 1.37 1.17 0.63 ref. 0.63 0.73 0.53 0.15 0.25 0.05 0.15 0.25 0.05 10 o 12 o 8 o ver 1.0
SMD30U50P www.samhop.com.tw nov,12,2014 4 dfn 5x6 wafer lot no. production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) product no. smc internal code no.(a,b...z) top marking definition xxxxxxx d30u50p assembly house samhop logo ver 1.0
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