cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 1/9 MTB30N06Q8 cystek product specification n -channel logic level enha ncement mode power mosfet MTB30N06Q8 bv dss 60v i d 8a v gs =10v, i d =6.8a 25m r dson(typ) 28m v gs =4.5v, i d =4a description the MTB30N06Q8 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications. features ? low gate charge ? simple drive requirement ? pb-free lead plating package symbol outline sop-8 MTB30N06Q8 pin 1 g gate d drain s source
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 2/9 MTB30N06Q8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 60 gate-source voltage v gs 20 v continuous drain current @v gs =10v, t a =25 c 8 continuous drain current @v gs =10v, t a =70 c i d 6.7 pulsed drain current i dm 32 *1 avalanche current i as 8 a avalanche energy @ l=0.6mh, i d =8a, v gs =10v, v dd =30v e as 20 repetitive avalanche energy @ l=0.05mh e ar 0.5 *2 mj t a =25 3.1 total power dissipation *3 t a =70 p d 2 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 25 c/w thermal resistance, junction-to-ambient, max r th,j-a 40 *3 c/w note : 1. pulse width limited by maximum junction temperature. 2. duty cycle 1%. 3. surface mounted on 1 in 2 copper pad of fr-4 board, t 10s ; 125 c/w when mounted on minimum copper pad. the value in any given application depends on the user?s specific board design. characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v v gs =0, i d =250 a v gs(th) 1 1.3 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs = 20, v ds =0 - - 1 v ds =60v, v gs =0 i dss - - 25 a v ds =60v, v gs =0, t j =125 c - 25 35 v gs =10v, i d =6.8a r ds(on) *1 - 28 38 m v gs =4.5v, i d =4a g fs *1 - 9 - s v ds =5v, i d =6.8a dynamic qg *1, 2 - 18 - qgs *1, 2 - 5.2 - qgd *1, 2 - 6.3 - nc i d =6.8a, v ds =30v, v gs =10v t d(on) *1, 2 - 16 - tr *1, 2 - 7.5 - t d(off) *1, 2 - 47 - t f *1, 2 - 17 - ns v ds =30v, i d =1a, v gs =10v, r g =6
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 3/9 MTB30N06Q8 cystek product specification ciss - 1452 - coss - 58 - crss - 43 - pf v gs =0v, v ds =30v, f=1mhz source-drain diode v sd *1 - 0.71 1 v i s =1a, v gs =0v trr - 46 - ns qrr - 42 - nc i f =6.8a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. ordering information device package shipping MTB30N06Q8-0-t3-g sop-8 (pb-free lead plating an d halogen-free package) 2500 pcs / tape & reel
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 4/9 MTB30N06Q8 cystek product specification typical characteristics typical output characteristics 0 4 8 12 16 20 24 28 32 01234 5 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v v ds , drain-source voltage(v) i d , drain current (a) v gs =3v 10v,9v,8v,7v,6v,5v,4v v gs =2v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =2.5v v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =8a r ds( on) @tj=25c : 25 m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =8a
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 5/9 MTB30N06Q8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v gate charge characteristics 0 2 4 6 8 10 048121620 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =6.8a v ds =48v v ds =30v v ds =12v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, ja =125c/w single pulse dc 100ms r dson limited 1s 100 s 1ms 10ms maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25, v gs =10v, r ja =40c/w
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 6/9 MTB30N06Q8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 4 8 12 16 20 24 28 32 0123456 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse maximum power dissipation 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c ja =125c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =125c/w
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 7/9 MTB30N06Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 8/9 MTB30N06Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c699q8 issued date : 2013.04.15 revised date : page no. : 9/9 MTB30N06Q8 cystek product specification sop-8 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1850 0.2007 4.70 5.10 i 0.0031 0.0110 0.08 0.28 b 0.1457 0.1614 3.70 4.10 j 0.0157 0.0323 0.40 0.83 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0102 0.19 0.26 d 0.0500* 1.27* l 0.0145 0.0204 0.37 0.52 e 0.0130 0.0201 0.33 0.51 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0472 0.0638 1.20 1.62 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead sop-8 plastic package cystek packa g e code: q8 top view a b front view f c d e g i part a h j k o m l n right side view part a b30n06 device name date code
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