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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 35* i d @ v gs = 12v, t c = 100c continuous drain current 28 i dm pulsed drain current 140 p d @ t c = 25c max. power dissipation 208 w linear derating factor 1.67 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 320 mj i ar avalanche current 35 a e ar repetitive avalanche energy 20.8 mj dv/dt peak d iode recovery dv/dt 10 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 8.0 (typical) g international rectifiers r5 tm technology provides high performance power mosfets for spaceapplications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened IRHMJ57260SE power mosfetsurface mount (to-254aa tabless) www.irf.com 1 200v, n-channel
technology features: single event effect (see) hardened identical pre- and post-electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed electically isolated ceramic eyelets light weight

pre-irradiation product summary part number radiation level r ds(on) i d IRHMJ57260SE 100k rads (si) 0.049 ? 35a * to-254aa tabless pd-96913 downloaded from: http:///
IRHMJ57260SE pr e-irradiation 2 www.irf.com note: corresponding spice and saber models are available on international rectifier web site.

thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.60 r thcs case-to-sink 0.21 c/w r thja junction-to-ambient 48 typical socket mount source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 35* i sm pulse source current (body diode) 140 v sd diode forward voltage 1.2 v t j = 25c, i s = 35a, v gs = 0v t rr reverse recovery time 450 ns t j = 25c, i f = 35a, di/dt 100a/ s q rr reverse recovery charge 6.5 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a
electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.27 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.049 ? v gs = 12v, i d = 28a resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 35 s ( )v ds = 15v, i ds = 28a i dss zero gate voltage drain current 10 v ds = 160v ,v gs =0v 2 5 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 165 v gs =12v, i d = 35a q gs gate-to-source charge 45 nc v ds = 100v q gd gate-to-drain (miller) charge 75 t d (on) turn-on delay time 35 v dd = 100v, i d = 35a t r rise time 125 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time 80 t f fall time 50 l s + l d total inductance 6.8 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 5200 v gs = 0v, v ds = 25v c oss output capacitance 885 p f f = 1.0mhz c rss reverse transfer capacitance 50 na ? nh ns a downloaded from: http:///
www.irf.com 3 pre-irradiation IRHMJ57260SE international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

table 2. single event effect safe operating area ion let energy range vds (v) mev/(mg/cm 2 )) (mev) (m) @vgs=0v@vgs=-5v @vgs=-10v @vgs=-15v @vgs=-20v br 36.7 309 39.5 200 200 200 200 200 i 59.8 341 32.5 200 200 200 185 120 au 82.3 350 28.4 200 200 150 50 25 0 50 100 150 200 250 0 -5 -10 -15 -20 vgs vds br i au table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds =160v, v gs =0v r ds(on) static drain-to-source on-state resistance (to-3) 0.044 ? v gs = 12v, i d = 28a r ds(on) static drain-to-source v sd diode forward voltage 1.2 v v gs = 0v, i d = 35a on-state resistance (to-254) 0.049 ? v gs = 12v, i d = 28a downloaded from: http:///
IRHMJ57260SE pr e-irradiation 4 www.irf.com

15 0.01 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 5.0 6.0 7.0 8.0 9.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 35a downloaded from: http:///
www.irf.com 5 pre-irradiation IRHMJ57260SE

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1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 35a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1.0 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100s downloaded from: http:///
IRHMJ57260SE pr e-irradiation 6 www.irf.com $

v ds 90%10% v gs t d(on) t r t d(off) t f $
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0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs 25 50 75 100 125 150 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package downloaded from: http:///
www.irf.com 7 pre-irradiation IRHMJ57260SE q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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25 50 75 100 125 150 0 200 400 600 800 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 15.7a 22a 35a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:///
IRHMJ57260SE pr e-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l=0.5mh peak i l = 35a, v gs =12v i sd 35a, di/dt 575a/ s, v dd 200v, t j 150c footnotes: case outline and dimensions to-254aa tabless ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 12/2004 caution beryllia warning per mil-prf-19500 packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on themwhich will produce beryllia or beryllium dust. furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 1. dimens ioning & tolerancing per as me y14.5m-1994. 2. all dimensions are shown in millimeters [inches]. 4. t his out line is a modif ied t o-254aa jedec out line. 3. cont rol ling dime ns ion: inch. not es : pin assignments 1 = drain 2 = source 3 = gate downloaded from: http:///

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