t4 - lds - 0275 -1, rev . 2 (11 /18/13 ) ?201 3 microsemi corporation page 1 of 5 2n4854u available on commercial versions npn/pnp silicon c omplementary small signal dual t ransistor qualified per mil - prf - 19500/421 qualified levels: jan, jantx, and jantxv description this 2n4854u device in a low profile 6 - pin u package is military qualified up to a jan txv level for high - reliability applications. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. 6- pin u package also available in : to - 78 package 2n4854 6- pin flatpack package 2n383 8 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of jedec registered 2n4854 ? jan, jantx, and jantxv qualifications also available per mil - prf - 19500/421 ? rohs compliant versions available (commercial grade only) applications / benefits ? low - profile and compact package design ? lightweight maximum ratings parameters/test conditions symbol value per unit each transistor total package thermal resistance surface mount junc tion - to - solder point r ? j sp 110 90 oc /w thermal resistance junction - to - ambient (3) r ? ja 350 290 oc /w total power dissipation @ t a = +25 oc (1) p t 0.30 0.60 w total power dissipation @ t c = +25 oc (2) p t 1.0 2.0 w junction and storage temperature t j and t stg - 65 to +200 oc coll ector - base voltage, emitter open v cbo 60 v emitter - base voltage, collector open v ebo 5 v collector - emitter voltage, base open v ceo 40 v collector current, dc i c 600 ma lead to case voltage +/ - 120 v solder temperature @ 10 s 260 o c notes : 1. for t a > +25c, derate linearly 1. 71 mw/c one transistor, 3.43 mw/c both transistors . 2. for t c > +25c, derate linearly 5.71 mw/c one transistor, 11.43 mw/c both transistors . 3. ambient equates to pcb fr4 mounting (r ? jpcb ) in figure 2 and mil - prf - 19500/421 . msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 68 22298 website: www.microsemi.com downloaded from: http:///
t4 - lds - 0275 -1, rev . 2 (11 /18/13 ) ?201 3 microsemi corporation page 2 of 5 2n4854u mechanical and packaging ? case: hermetically sealed ceramic (bl ac k), au over ni plated kovar lid ? terminals: au over ni plated metallization ? marking: manufacturers id, part number, date code ? polarity: see cas e outline. ? weight: 0.158 grams ? see p ackage d imensions on last page . part nomenclature jan 2n4854 u (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number ( see electrical characteristics t able ) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, base open : the voltage between the collector and base terminals when the emitter terminal is open - circuited . v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ce o collector - emitter voltage , base open : the voltage between the collector and the emitter terminals when the base terminal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base . v eb o emitter - base voltage , collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds - 0275 -1, rev . 2 (11 /18/13 ) ?201 3 microsemi corporation page 3 of 5 2n4854u electrical characteristics @ t a = 25 oc unless otherwise noted characteristics sy mbol min. max. unit off characteristics collector -em itter breakdown current i c = 10 ma (pulsed) v (b r)ceo 40 v collector - base cutoff current v cb = 60 v i cbo(1) 10 a collector - base cutoff current v cb = 50 v i cbo(2) 10 na em itter - base cutoff current v eb = 5.0 v v eb = 3.0 v i ebo( 1) i ebo(2) 10 10 a na on characteristics forward- current transfer ratio i c = 150 ma, v ce = 1 v i c = 100 a, v ce = 10 v i c = 1.0 ma , v ce = 10 v i c = 10 ma , v ce = 10 v i c = 150 ma, v ce = 10 v i c = 300 ma, v ce = 10 v h fe 50 35 50 75 100 35 300 collector -em itter saturation voltage i c = 150 ma , i b = 15 ma v ce(sat) 0.40 v base-em itter s aturation voltage i c = 150 ma, i b = 15 ma v be(sat) 0.80 1.25 v dynamic characteristics forward current transfer ratio i c = 1.0 ma , v ce = 10 v, f = 1.0 khz h fe 60 300 forward current transfer ratio, magnitude i c = 20 ma, v ce = 10 v, f = 100 mhz | h fe | 2.0 10 sm all - signal co mm on em itter input impedance i c = 1.0 ma, v ce = 10 v, f = 1.0 khz h ie 1.5 9.0 k? sm all - signal co mm on em itter output adm ittance i c = 1.0 ma, v ce = 10 v, f = 1.0 khz h oe 50 hmo open circuit output capacitance v cb = 1 0 v, i e = 0, 100 khz f 1.0 mhz c obo 8.0 pf noise f igure i c = 100 a , v ce = 10 v, f = 1.0 khz, r g =1.0 k? nf 8.0 db switching characteristics turn - on time (saturated) (reference mil - prf - 19500/421, figure 7) t on 45 ns turn - off time (saturate d) (reference mil - prf - 19500/421, figure 8) t off 300 ns pulse response (non - saturated) (reference mil - prf - 19500/421, figure 9) t on + t off 18 ns collector -em itter non - latching voltage v ceo 40 v downloaded from: http:///
t4 - lds - 0275 -1, rev . 2 (11 /18/13 ) ?201 3 microsemi corporation page 4 of 5 2n4854u graphs t ime (s) figure 1 thermal impedance graph (r ?jsp ) time (s) figure 2 thermal impedance graph (r ?jpc b ) theta ( o c/ w) theta ( o c/ w) downloaded from: http:///
t4 - lds - 0275 -1, rev . 2 (11 /18/13 ) ?201 3 microsemi corporation page 5 of 5 2n4854u package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. the co - planarity deviation of all terminal contact points, as defined by the device seating plane, s hall not exceed .006 inch (0.15 mm) for solder dipped leadless chip carriers . ltr dim en sion no t es inch m ill imet er s m in max m in max a .058 .100 1.47 2.54 a1 .026 .039 0.66 0.99 b1 .022 .028 0.56 0.71 b2 .072 ref. 1.83 ref. b3 .006 .022 0.15 0.56 d .165 .175 4.19 4.45 d1 .095 .105 2.41 2.67 ltr dim en sions no t es inch m ill imet er s m in max m in max d2 .045 .055 1.14 1.40 d3 .175 4.45 e .240 .250 6.10 6.35 e1 .250 6.35 l1 .060 .070 1.52 1.78 l2 .082 .098 2.08 2.49 l3 .003 .007 0.08 0.18 downloaded from: http:///
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