page 1 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com product overview mini-circuits tss-53lnb-d+ is a low-noise amplifer die offering industry-leading performance over its full frequency range from 500 mhz to 6 ghz. it contains internal switching, allowing the user control of the am - plifer to handle both high and low signal levels by bypassing the lna in the presence of large signals. the tss-53lnb-d+ utilizes e-phemt technology to achieve excellent noise fgure performance in a unique cascade confguration enabling the combination of very wide band performance and fat gain. feature advantages ultra-wideband: 500 mhz C 6 ghz ideal for a wide range of receiver applications including military, commercial wireless, and instrumentation. very fat gain: 0.4 db over 0.7-2.1 ghz ideal for broadband or multi-band applications. just one, cost-effcient model required for multiple frequency usage. minimal external matching components required. 15 db return loss typ. minimizes the need for external matching networks, simplifying circuit designs, and enabling the amplifer to operate over multiple bands in a single application circuit. high ip3: 48 dbm typ. (bypass mode) provides enhanced linearity over broad frequency range under high signal conditions. internal bypass switch feature unique design handles low to high signal levels with minimal noise distortion. built-in dc blocking cap at rf-out port & separate pads for rf-out & vdd simplifes biasing eliminates need for bias-tee at output. unpackaged die enables the users to integrate amplifer directly into hybrids. key features 50 ? 0.5 to 6 ghz the big deal ? very wideband, 500 mhz C 6 ghz ? ultra-fat gain, 0.4 db from 700 to 2100 mhz ? low nf over entire frequency band, 1.4 db ? internal bypass switching extends useable dynamic range wideband tss-53lnb-d+ low noise bypass amplifer die
page 2 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com function description (see figure 2) rf-in rf-input pad. connect to ground via l1. add a dc blocking cap in series of appropri - ate value if required. rf-out rf-output pad. no external dc blocking cap required. current control current control pad, voltage level on this pad sets the idd. connect to pad voltage en - able pad via 3.92 k ? resistor. voltage enable voltage enable pad. voltage level on this pad determines amplifer is on or bypassed. vdd supply voltage pad. connect to vdd via l2. ground bottom of die product features ? wideband: 0.5-6 ghz ? built-in bypass switching ? low noise fgure: 1.3 db typ. at 2.0 ghz ? high gain: 21.4 db typ. at 2 ghz ? ultra flat gain: 0.4 db from 0.7 to 2.1 ghz ? p1db: +21 dbm typ. at 2.0 ghz ? minimal matching components rev. or m153108 tss-53lnb-d+ th/rs/cp 160510 general description tss-53lnb-d+ (rohs compliant) is an advanced ultra-fat gain low noise wideband amplifer die fabricated using e-phemt technology offering extremely high dynamic range over a broad frequency range. it has integrated switches enabling users to bypass the amplifer during high signal conditions. in addition, the tss-53lnb-d+has good input and output return loss over a broad frequency range without the need for external matching components. typical applications ? wireless base station systems ? test and measurement systems ? multi-band receivers wideband tss-53lnb-d+ low noise bypass amplifer die voltage enable ground rf-out current control vdd rf-in ordering information: refer to last page simplifed schematic and pad description +rohs compliant the +suffix identifies rohs compliance. see our web site for rohs compliance methodologies and qualifications
page 3 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com (3) permanent damage may occur if any of these limits are exceeded. electrical maximum ratings are not intended for continuous normal operation. (4) die performance measured in industry standard 3x3 mm 12-lead package. (5) do not exceed absolute maximum ratings. electrical specifcations (1) at 25c, zo=50 ? and v =5v, unless otherwise noted tss-53lnb-d+ (1) measured on mini-circuits die characterization test board. see characterization test circuit (fig. 1) (2) current increases at p1db absolute maximum ratings (3,4) parameter ratings operating temperature (bottom of die) -40c to 85c total power dissipation 0.7 w input power amplifer-on 8 dbm (continuous), 19 dbm (5 min max.) amplifer bypass 16 dbm (continuous), 29 dbm (5 min max.) dc voltage vdd 7.0 v dc voltage enable 7.0 v max. voltage on rf-out pad 15 v parameter condition (ghz) amplifer-on amplifer-bypass units min. typ. max. typ. frequency range 0.5 6.0 ghz noise figure 0.5 1.4 0.8 db 1.0 1.2 0.9 2.0 1.3 1.1 4.0 1.6 1.4 5.0 1.7 1.4 6.0 2.2 1.7 gain 0.5 22.0 -0.8 db 1.0 21.9 -0.9 2.0 21.4 -1.1 4.0 19.4 -1.7 5.0 18.4 -1.6 6.0 17.1 -2.0 gain flatness 0.7 - 2.1 0.4 0.7 db input return loss 0.5 14.9 23.9 db 1.0 15.4 18.3 2.0 21.7 14.3 4.0 11.6 10.4 5.0 10.8 14.7 6.0 13.3 13.3 output return loss 0.5 10.5 22.3 db 1.0 11.7 17.1 2.0 16.4 15.0 4.0 10.3 10.9 5.0 7.9 13.5 6.0 6.6 11.1 output power @1db compression amp-on (2) input power @1db compression amp-bypass (4,5) 0.5 20.9 32.0 dbm 1.0 21.0 2.0 20.7 33.0 4.0 19.4 5.0 18.9 27.0 6.0 16.4 32.0 output ip3 0.5 34.0 45.4 1.0 36.3 46.1 2.0 35.0 45.8 4.0 32.2 41.2 5.0 30.5 40.3 6.0 28.7 38.0 device operating voltage (vdd) 5.0 4.8-5.2 (5.0 typ.) v device operating current (id) 46 82 105 2 ma enable voltage (ve) 5.0 0 v enable control current (ie) 2.0 0 ma dc current (id) variation vs. voltage 0.007 ma/mv thermal resistance, junction-to-ground lead 48 c/w enable voltage (ve) fig. 1 min. typ. max. units amplifer-on 4.5 5.0 5.5 v amplifer-bypass 0 0.5 v monolithic e-phemt mmic amplifer die
page 4 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com tss-53lnb-d+ fig 1 . block diagram of test circuit used for die characterization. gain, return loss, output power at 1db compression (p1 db) , output ip3 (oip3) and noise fgure measured using agilents n5242a pna-x microwave network analyzer. conditions: 1. gain and return loss: pin= -25dbm 2. output ip3 (oip3): two tones, spaced 1 mhz apart, 0 dbm/tone at output. 3. switching time: pin=-25 dbm at 500 mhz. venable=4.5, 5.0, 5.5v at 10 khz. vd=4.75, 5.0 and 5.5v. (note 4) characterization test circuit recommended application circuit fig 2 . recommended application circuit. switching specifcations (rise/fall time) parameter min. typ. max. units amplifer on to bypass off time (50% control to 10% rf) 50 ns fall time (90 to 10% rf) 12 amplifer bypass to on on time (50% control to 90% rf) 740 ns rise time (10% to 90% rf) 240 control voltage leakage 65 mv component size value units l1 0402 47 nh l2 0402 56 nh c1 0402 0.1 f c2 0402 10 pf r1 0402 3.92 k ? component size value units l1 0402 47 nh l2 0402 56 nh r1 0402 3.92 k ? c1 0402 0.1 f c2 0402 10 pf c3 0402 1000 pf schmitt trigger sn74lvc2g17dckr texas instruments die layout critical dimensions parameter values die thickness, m 100 die width, m 900 die length, m 1000 bond pad size, m 100 x 100 fig 4. bonding pad positions bonding pad position (dimensions in m, typical) fig 3. die layout monolithic e-phemt mmic amplifer die
page 5 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com assembly diagram assembly and handling procedure 1. storage dice should be stored in a dry nitrogen purged desiccators or equivalent. 2. esd mmic ephempt amplifer dice are susceptible to electrostatic and mechanical damage. die are supplied in antistatic protected material, which should be opened in clean room conditions at an appropriately grounded anti-static worksta tion. devices need careful handling using correctly designed collets, vacuum pickup tips or sharp antistatic tweezers to deter esd damage to dice. 3. die attach the die mounting surface must be clean and fat. using conductive silver flled epoxy, recommended epoxies are diemat dm6030hk-pt/h579 or ablestik 84-1lmisr4. apply suffcient epoxy to meet required epoxy bond line thickness, epoxy fllet height and epoxy coverage around total die periphery. parts shall be cured in a nitrogen flled atmosphere per manufacturers cure condition. it is recommended to use antistatic die pick up tools only. 4. wire bonding bond pad openings in the surface passivation above the bond pads are provided to allow wire bonding to the dice gold bond pads. thermosonic bonding is used with minimized ultrasonic content. bond force, time, ultrasonic power and temperature are all critical parameters. suggested wire is pure gold, 1 mil diameter. bonds must be made from the bond pads on the die to the package or substrate. all bond wires should be kept as short as low as reasonable to minimize performance degradation due to undesirable series inductance. recommended wire length, typical wire wire length (mm) wire loop height (mm) rf-in 0.9 0.15 dc in (vdd), voltage enable, current control 0.5 0.15 rf-out 0.6 0.15 rf reference plane - no port extension monolithic e-phemt mmic amplifer die rf reference plane material: roger 4350b 10 mil dielectric constant: 3.5 copper thickness: 0.5 oz finishing: enig vdd grd dut rf reference plane v enable
page 6 of 6 notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp mini-circuits ? www.minicircuits.com p.o. box 350166, brooklyn, ny 11235-0003 (718) 934-4500 sales@minicircuits.com tss-53lnb-d+ esd rating** human body model (hbm): class 1a (250 to <500v) in accordance with ansi/esd stm 5.1 - 2001 machine model (mm): class m1 (pass 50v) in accordance with ansi/esd stm5.2-1999 additional notes a. performance and quality attributes and conditions not expressly stated in this specifcation document are intended to be excluded and do not form a part of this specifcation document. b. electrical specifcations and performance data contained in this specifcation document are based on mini-circuits applicable established test performance criteria and measurement instructions. c. the parts covered by this specifcation document are subject to mini-circuits standard limited warranty and terms and conditions (collectively, standard terms); purchasers of this part are entitled to the rights and benefts contained therein. for a full statement of the standard terms and the exclusive rights and remedies thereunder, please visit mini-circuits website at www.minicircuits.com/mclstore/terms.jsp performance data data table swept graphs s-parameter (s2p files) data set with and without port extension (.zip fle) case style die die ordering and packaging information quantity, package model no. small, gel - pak: 5,10,50,100 kgd* medium ? , partial wafer: kgd*<5k large ? , full wafer tss-53lnb-dg+ TSS-53LNB-DP+ tss-53lnb-df+ ? available upon request contact sales representative refer to an-60-067 environmental ratings env-80 *known good dice (kgd) means that the dice in question have been subjected to mini-circuits dc test performance criteria and measurement instructions and that the parametric data of such dice fall within a predefned range. while dc testing is not defnitive, it does help to provide a higher degree of confdence that dice are capable of meeting typical rf electrical parameters specifed by mini-circuits. additional detailed technical information additional information is available on our dash board. ** die performance measured in industry standard 3x3 mm 12-lead package. monolithic e-phemt mmic amplifer die
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