power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 50 MG0675S-BN4MM 600v 75a igbt module MG0675S-BN4MM features applications ? high short circuit capability, self limiting short circuit cur rent ? v ce(sat) with positive temperature coeffcient ? fast switching and short t ail current ? free wheeling diodes with fast and sof t reverse recovery ? low switc hing losses absolute maximum ratings (t c = 25c, unless otherwise specifed) symbol parameters test conditions values unit igbt v ces collector - emitter voltage t j =25c 600 v v ges gate - emitter voltage 20 v i c dc collector current t c =25c 100 a t c =70c 75 a i cm repetitive peak collector current t p =1ms 150 a p tot power dissipation per igbt 250 w diode v rrm repetitive reverse voltage t j =25c 600 v i f(av) average forward current t c =25c 100 a t c =70c 75 a i frm repetitive peak forward current t p =1ms 150 a i 2 t t j =125c, t=10ms, v r =0v 660 a 2 s module characteristics (t c = 25c, unless otherwise specifed) symbol parameters test conditions min typ max unit t j max max. junction temperature 175 c t j op operating temperature -40 150 c t stg storage temperature -40 125 c v isol insulation test voltage ac, t=1min 3000 v cti comparative tracking index 350 torque module-to-sink recommended (m6) 3 5 nm torque module electrodes recommended (m5) 2.5 5 nm weight 160 g ? high frequency switching application ? medical applications ? motion/serv o control ? ups systems life support note: not intended for use in life support or life saving applications the products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. ? rohs agency approvals 1 agency agency file number e71639
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 51 MG0675S-BN4MM 600v 75a igbt module symbol parameters test conditions min typ max unit igbt v ge(th) gate - emitter threshold voltage v ce =v ge , i c =1.2ma 4.9 5.8 6.5 v v ce(sat) collector - emitter saturation voltage i c =75a, v ge =15v, t j =25c 1.45 1. 9 v i c =75a, v ge =15v, t j =125c 1. 6 v i ces collector leakage current v ce =600v, v ge =0v, t j =25c 1 ma v ce =600v, v ge =0v, t j =125c 5 ma i ges gate leakage current v ce =0v,v ge =15v, t j =125c -400 400 na r gint integrated gate resistor 0 q ge gate charge v cc =300v, i c =75a , v ge =15v 0.8 c c ies input capacitance v ce =25v, v ge =0v, f =1mhz 4.6 nf c res reverse transfer capacitance 0.145 nf t d(on) turn - on delay time v cc =300v i c =75a r g =5.1 v ge =15v inductive load t j =25c 25 ns t j =125c 25 ns t r rise time t j =25c 20 ns t j =125c 20 ns t d(off) turn - off delay time t j =25c 210 ns t j =125c 240 ns t f fall time t j =25c 60 ns t j =125c 70 ns e on turn - on energy t j =25c 0.35 mj t j =125c 0.5 mj e off turn - off energy t j =25c 2.4 mj t j =125c 2.8 mj i sc short circuit current t psc 6s , v ge =15v; t j =125c,v cc =360v 380 a r thjcd junction-to-case thermal resistance (per igbt) 0.6 k/w diode v f forward voltage i f =75a , v ge =0v, t j =25c 1.55 1.95 v i f =75a , v ge =0v, t j =125c 1.50 v i rrm max. reverse recovery current i f =75a , v r =300v di f /dt=-4000a/s t j =125c 115 a q rr reverse recovery charge 6.0 c e rec reverse recovery energy 1. 5 mj r thjc junction-to-case thermal resistance (per diode) 0.9 k/w electrical and thermal specifcations (t c = 25c, unless otherwise specifed) 2
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 52 MG0675S-BN4MM 600v 75a igbt module figure 1: typical output characteristics i c (a) v ce ?v? t j =125c t j =25c 150 120 90 60 30 0 0 0.4 0. 81 .2 1.6 2.0 2.4 v ge =15v figure 2: typical output characteristics v ge ?v? 0 30 i c (a) 60 90 120 150 t j =125c t j =25c v ce =20v 11 10 9 7 6 5 8 figure 3: typical transfer characteristics 4 6 2 3 1 0 01 0 20 30 40 50 e on e of f ( mj ) e on e of f r g ? ? v cc =300 v i c =75 a v ge =15v t j =125c 5 figure 4: switching energy vs. gate resistor 0 30 i c ?a? v cc =300v r g =5.1 v ge =15v t j =125c 150 90 60 e of f e on 0 1 2 6 e on e of f ( mj ) 3 120 4 5 figure 5: switching energy vs. collector current figure 6: reverse biased safe oper ating area 0 30 60 90 120 165 01 00 200 3004 00 500 600 v ce ?v? 700 r g =5.1 v ge =15v t j =125c i c (a) 150 v ce ?v? 4.0 3.5 3.0 2.5 1.51.00.50 i c (a) t j =125c 2.04 .5 5.0 150 120 90 60 30 0 ge v =11v ge v = 9v ge v =13v ge v =15v ge v =17v ge v =19v 3
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 53 MG0675S-BN4MM 600v 75a igbt module figure 7: diode forwar d characteristics v f ?v? 0.4 0 0.8 1.2 1.6 2.0 0 30 90 120 150 60 i f ( a ) t j =25c t j =125c e rec ( mj ) r g ? ? 0 10 30 40 2 1 0 3 50 20 i f =75 a v ce =300 v t j =125c figure 8: switching energy vs. gate resistor e rec ( mj ) 1 0 30 i f (a) 150 120 60 0 2 4 90 3 r g =5.1 v ce =300v t j =125c figure 9: switching energy vs. forward current rectangular pulse duration (seconds) z thjc ( k/w ) 0.0010 .010 .1 11 0 0.01 0.1 1 diod e igbt figure 10: transient thermal impedance 4
power module ?2015 littelfuse, inc specifcations are subject to change without notice. revised:05/19/15 54 MG0675S-BN4MM 600v 75a igbt module packing options part number marking weight packing mode m.o.q MG0675S-BN4MM MG0675S-BN4MM 160g bulk pack 100 part numbering system part marking system product type m: power module module type g: igbt circuit type wafer type package type mg06 75 s - b n4 mm voltage rating current rating assembly site 06: 600v 75: 75a 2x(igbt+fwd) dimensions-package s circuit diagram 5 MG0675S-BN4MM lot number space reserved for qr code
|
