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| SI6874EDQ vishay siliconix new product document number: 71252 s-01753erev. a, 14-aug-00 www.vishay.com faxback 408-970-5600 1 dual n-channel 20-v (d-s) mosfet, common drain v ds (v) r ds(on) ( ) i d (a) 20 0.026 @ v gs = 4.5 v 6.5 20 0.031 @ v gs = 2.5 v 5.8 0.039 @ v gs = 1.8 v 5.0 SI6874EDQ s 1 g 1 s 2 g 2 1 2 3 4 8 7 6 5 d d d d tssop-8 top view d g 1 s 1 d g 2 s 2 n-channel n-channel 2.4 k 2.4 k parameter symbol 10 secs steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d 6.5 5.3 a continuous drain current (t j = 150 c) a t a = 85 c i d 4.7 4.2 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 1.50 1.10 maximum power dissipation a t a = 25 c p d 1.67 1.20 w maximum power dissipation a t a = 85 c p d 1.06 0.76 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol typical maximum unit maximum junction - to - ambient a t 10 sec r thja 60 75 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 86 105 c/w maximum junction-to-foot (drain) steady state r thjf 38 45 notes a. surface mounted on 1o x 1o fr4 board. SI6874EDQ vishay siliconix new product www.vishay.com faxback 408-970-5600 2 document number: 71252 s-01753erev. a, 14-aug-00 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.40 v gate - body leakage i gss v ds = 0 v, v gs = 4.5 v 1 a gate - body leakage i gss v ds = 0 v, v gs = 12 v 10 ma zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 85 c 20 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 20 a dis os r i a v gs = 4.5 v, i d = 6.5 a 0.021 0.026 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 5.8 a 0.025 0.031 v gs = 1.8 v, i d = 5.0 a 0.031 0.039 forward transconductance a g fs v ds = 10 v, i d = 6.5 a 25 s diode forward voltage a v sd i s = 1.5 a, v gs = 0 v 0.65 1.1 v dynamic b total gate charge q g v10vv45vi65a 12.5 18 c gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 6.5 a 2.7 nc gate-drain charge q gd 2.7 turn-on delay time t d(on) v10vr10 0.7 1.0 rise time t r v dd = 10 v, r l = 10 i1av 45vr6 1.3 2.0 s turn-off delay time t d(off) dd , l i d 1 a, v gen = 4.5 v, r g = 6 5.5 8.0 s fall time t f 4.6 7.0 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0.01 100 10,000 % &## !% '$ % ("&# " % 0369121518 % ( &## !% '$ % ("&# " % v gs gate-to-source voltage (v) 0.1 1 10 1,000 v gs gate-to-source voltage (v) gate current ( i gss a) 15 0 36912 t j = 25 c t j = 150 c gate current (ma) i gss 8 6 4 2 0 SI6874EDQ vishay siliconix new product document number: 71252 s-01753erev. a, 14-aug-00 www.vishay.com faxback 408-970-5600 3 0 6 12 18 24 30 0 0.5 1.0 1.5 2.0 2.5 0 0.01 0.02 0.03 0.04 0.05 0.06 0 6 12 18 24 30 0 6 12 18 24 30 024681012 0 1 2 3 4 5 03691215 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 0 4 8 12 16 20 v gs = 5 thru 2 v 25 c t c = 55 c c rss c oss c iss v ds = 10 v i d = 6.5 a v gs = 4.5 v i d = 6.5 a v gs = 4.5 v v gs = 2.5 v 125 c 1.5 v &%"&% #%# $% $ # $# #%# $% $ % # ($ $% '$ # &## % v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs on-resistance ( r ds(on) ) i d drain current (a) " % ($ $% '$ & % ! "#%&# t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 1.8 v SI6874EDQ vishay siliconix new product www.vishay.com faxback 408-970-5600 4 document number: 71252 s-01753erev. a, 14-aug-00 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0 0.02 0.04 0.06 0.08 0123456 1 10 20 i d = 6.5 a 0 0.4 0.6 0.8 t j = 25 c t j = 150 c # $ " " % variance (v) v gs(th) t j temperature ( c) "&# ) # ! " "#(# " % !) $ $%! '$ % )%")"&# " % on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s 0 8 32 power (w) single pulse power, junction-to-ambient time (sec) 16 24 10 3 10 2 1 10 600 10 1 10 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 86 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 100 10 10 1 10 2 SI6874EDQ vishay siliconix new product document number: 71252 s-01753erev. a, 14-aug-00 www.vishay.com faxback 408-970-5600 5 10 3 10 2 110 10 1 10 4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance |
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