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cha3656 - qag ref. : dscha3656 - qag3156 - 05 jun 13 1 / 14 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 v illebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 5.8 - 17ghz low noise amplifier gaas monolithic microwave ic in smd leadless package description the cha3656 - qag is a t wo - stage self - biased wide band monolithic low noise amplifier . it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it i s supplied in rohs compliant smd package. main features gain & noise figure (db) rd order intercept point 14 dbm power at 1db compression main electrical characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range 5.8 17.0 ghz gain linear gain 18 20.0 db nf noise figure 1.7 2 db p 1db output power @1db comp. 13.0 14.0 dbm 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 5 6 7 8 9 10 11 12 13 14 15 16 17 18 gain & nf (db) frequency (ghz) gain nf ums a3656 yyww ?? ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg ums a3667a yywwg ums a3667a yywwg ums a3688a yywwg
cha3656 - qag 5.8 - 17g hz low noise amplifier ref. : dscha3656 - qag3156 - 05 jun 13 2 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c , vd = +3.0 v , p1, n2 = gnd (1) symbol parameter min typ max unit freq frequency range 5.8 17.0 ghz gain linear gain 18 20.0 db nf noise figure 1.7 2 db rl in input return loss 7 8 rl out output return loss 9 10 ip3 3rd order intercept point (pin dcl = - 20 dbm) 24 dbm p1db output power at 1db gain comp 13 14 dbm d1, d2 drain bias voltage 3 4 v id drain bias current 68 90 ma these values are representative of onboard measurements as defined on the drawing in paragraph "evaluation mother board". (1) pin f1 & p2 are not connected absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 4. 5v v pin rf input power 1 0 dbm tj junction temperature (2) 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. typical bias conditions tamb.= + 25c symbol pad n o parameter values unit d1 16 dc drain voltage 2 nd stage 3 v d2 14 dc drain voltage 1st stage 3 v p1, n2 5, 8 dc gate voltage gnd f1, p2 6, 7 dc gate voltage not connected
5.8 - 17ghz low noise amplifier cha3656 - qag ref. : dscha3656 - qag3156 - 05 jun 13 3 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 device thermal performances all the figures given in this section are obtained assuming that the qfn device is cooled down only by conduction through the package thermal pad (no convection mode considered). the temperature is monitored at the package back - side interface (tcase) as shown below. the system maximum temperature must be adjusted in order to guarantee that tcase remains below the maximum value specified in the next table. so, the system pcb must be designed to comply with this requirement. a derating must be applied on the dissipated power if the tcase temperature can not be maintained below the maximum temperature specified (see the curve pdiss. max) in order to guarantee the nominal device life time (mttf). recommended max. junction temperature (tj max) : 115 c junction temperature absolute maximum rating : 175 c max. continuous dissipated power (pdiss. max.) : 0,2 w => pdiss. max. derating above tcase (1) = 85 c : 7 mw/c junction-case thermal resistance (rth j-c) (2) : <147 c/w minimum tcase operating temperature (3) : -40 c maximum tcase operating temperature (3) : 85 c minimum storage temperature : -55 c maximum storage temperature : 150 c (1) derating at junctio n temperature co nstant = tj max. (2) rth j-c is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the m m ic and all the devices biased. (3) tcase=p ackage back side temperature measured under the die-attach-pad (see the drawing belo w). 6,4 device thermal specification : CHA3656-QAG 0 0,05 0,1 0,15 0,2 0,25 - 50 - 25 0 25 50 75 100 125 pdiss. max. @tj cha3656 - qag 5.8 - 17g hz low noise amplifier ref. : dscha3656 - qag3156 - 05 jun 13 4 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters temp = +25c, vd1=vd2= +3v, typical id=68ma p1 , n2 = gnd freq (ghz) s11 (db) phs11 () s 2 1 (db) phs 2 1 () s 1 2 (db) phs 1 2 () s22 (db) phs22 () 2.0 - 0.34 - 83.2 - 28.42 - 15.8 - 72.11 176.9 - 0.49 - 80.8 3.0 - 1.10 - 141.5 1.67 - 102.6 - 65.37 111.5 - 3.57 - 127.6 4.0 - 5.41 117.5 15.84 139.3 - 55.13 - 159.3 - 7.37 - 141.7 5.0 - 9.50 - 29.6 20.10 33.8 - 44.56 123.6 - 8.94 - 159.4 6.0 - 8.96 - 91.0 21.15 - 44.4 - 40.55 68.1 - 10.28 - 179.7 7.0 - 8.15 - 123.8 21.35 - 107.9 - 38.41 20.1 - 11.23 151.6 8.0 - 7.79 - 153.6 21.48 - 163.3 - 37.55 - 22.4 - 12.88 112.9 9.0 - 7.65 175.0 21.27 145.1 - 36.87 - 57.8 - 15.39 67.6 10.0 - 8.40 142.7 20.93 98.1 - 36.09 - 93.6 - 17.45 19.0 11.0 - 9.73 110.8 20.64 54.2 - 35.53 - 130.8 - 18.48 - 25.3 12.0 - 11.45 78.9 20.52 11.7 - 35.31 - 168.0 - 18.95 - 58.1 13.0 - 12.57 46.2 20.44 - 31.3 - 35.28 158.3 - 20.78 - 73.1 14.0 - 13.31 8.3 20.36 - 72.7 - 35.42 118.2 - 18.76 - 81.3 15.0 - 12.31 - 31.4 20.65 - 115.4 - 36.12 81.2 - 18.03 - 98.3 16.0 - 9.92 - 123.1 20.76 148.1 - 38.53 - 10.4 - 19.36 - 166.6 17.0 - 7.86 - 171.8 20.31 93.5 - 43.59 - 46.7 - 25.75 - 105.7 18.0 - 6.76 133.6 18.75 37.2 - 48.33 6.2 - 13.10 - 107.4 19.0 - 7.81 74.4 15.93 - 16.0 - 40.68 - 7.4 - 8.06 - 144.6 20.0 - 9.90 - 166.9 12.65 - 60.6 - 38.83 - 47.3 - 6.55 2.4 21.0 - 10.68 125.5 9.55 - 101.3 - 37.64 - 90.5 - 5.33 - 24.4 22.0 - 9.37 63.4 6.39 - 138.7 - 39.46 - 128.6 - 4.59 - 50.6 23.0 - 7.54 17.3 3.76 - 169.4 - 42.41 - 165.0 - 4.63 - 74.5 24.0 - 5.98 - 21.0 1.63 156.4 - 43.57 158.7 - 4.38 - 94.4 25.0 - 5.00 - 54.6 - 0.50 126.5 - 41.11 111.1 - 4.12 - 117.2 26.0 - 4.48 - 86.2 - 1.76 96.7 - 40.00 52.8 - 4.23 - 140.4 27.0 - 4.57 - 118.6 - 2.01 63.3 - 36.45 - 3.5 - 4.58 - 164.0 28.0 - 6.02 - 152.7 - 0.94 17.2 - 32.52 - 46.6 - 5.05 173.8 29.0 - 10.14 - 156.2 - 1.77 - 61.9 - 30.56 - 107.8 - 4.94 148.9 30.0 - 6.28 - 170.9 - 10.00 - 126.8 - 33.31 - 160.3 - 5.45 117.7 31.0 - 5.52 155.7 - 18.14 - 161.2 - 35.30 - 174.5 - 6.25 88.5 32.0 - 5.71 120.6 - 23.23 - 171.6 - 34.60 165.3 - 6.30 58.2 33.0 - 6.71 75.3 - 22.53 158.7 - 29.95 130.6 - 5.33 23.1 34.0 - 12.87 - 17.2 - 21.95 73.3 - 28.76 46.8 - 5.25 - 17.5 35.0 - 8.31 149.2 - 27.40 - 31.7 - 35.96 - 32.7 - 5.28 - 52.8 36.0 - 5.11 75.1 - 34.16 - 84.5 - 38.00 - 63.9 - 5.40 - 84.6 37.0 - 7.25 28.9 - 40.00 55.5 - 38.04 72.4 - 5.30 - 109.7 38.0 - 5.48 - 17.3 - 27.67 - 102.0 - 30.98 - 111.3 - 4.37 - 136.1 39.0 - 6.02 - 79.5 - 28.55 - 154.0 - 33.34 - 173.6 - 3.62 - 162.5 40.0 - 6.43 - 133.6 - 30.94 163.3 - 35.78 133.5 - 2.91 173.2 refer to the definition of the sij reference planes section below.
5.8 - 17ghz low noise amplifier cha3656 - qag ref. : dscha3656 - qag3156 - 05 jun 13 5 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c , vd = +3.0v, id = 68 ma , p1 = n2 = gnd measurement in the package access planes linear gain & return loss versus frequency noise figure versus frequency & vd - 28 - 24 - 20 - 16 - 12 - 8 - 4 0 4 8 12 16 20 24 28 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 gain & return losses (db) frequency (ghz) s21 s11 s22 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 5 6 7 8 9 10 11 12 13 14 15 16 17 18 noise figure (db) frequency (ghz) nf 2.5 v nf 3 v nf 3.5 v nf 4 v
cha3656 - qag 5.8 - 17g hz low noise amplifier ref. : dscha3656 - qag3156 - 05 jun 13 6 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c , vd = +3.0v, id = 68 ma , p1 = n2 = gnd measurement in the package access planes output power at 1db compression versus frequency & vd drain current versus vd 0 2 4 6 8 10 12 14 16 18 20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 output p1db (dbm) frequency (ghz) 2.5 v 3 v 3.5 v 4 v 0.05 0.055 0.06 0.065 0.07 0.075 0.08 0.085 0.09 2.5 3 3.5 4 drain current (a) drain voltage (v)
5.8 - 17ghz low noise amplifier cha3656 - qag ref. : dscha3656 - qag3156 - 05 jun 13 7 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c , vd = +3.0v, id = 68 ma , p1 = n2 = gnd measurement in the package access planes output ip3 versus frequency & vd pin (dcl) = - 20dbm output ip3 versus pin & frequency vd = 3v 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 6 7 8 9 10 11 12 13 14 15 16 17 18 oip3 (dbm) frequency (ghz) vd= 2.5v vd= 3v vd= 3.5v vd= 4v 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 - 22 - 20 - 18 - 16 - 14 - 12 - 10 oip3 (dbm) input power dcl (dbm) 6ghz 8ghz 10ghz 12ghz 14ghz 16ghz 17ghz
cha3656 - qag 5.8 - 17g hz low noise amplifier ref. : dscha3656 - qag3156 - 05 jun 13 8 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c , vd = +3.0v, id = 68 ma , p1 = n2 = gnd measurement in the package access planes linear gain versus frequency & temperature noise figure versus frequency & temperature 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 gain (db) frequency (ghz) - 40 c +25 c +85 c 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5 6 7 8 9 10 11 12 13 14 15 16 17 18 noise figure (db) frequency (ghz) +25 c +85 c - 40 c
5.8 - 17ghz low noise amplifier cha3656 - qag ref. : dscha3656 - qag3156 - 05 jun 13 9 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements tamb.= +25c , vd = +3.0v, id = 68 ma , p1 = n2 = gnd measurement in the package access planes output ip3 versus pin, temperature & vd frequency = 16ghz 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 - 22 - 20 - 18 - 16 - 14 - 12 oip3 (dbm) input power dcl (dbm) - 40 c at 3v 25 c at 3v +85 c at 3v - 40 c at 4v 25 c at 4v +85 c at 4v
cha3656 - qag 5.8 - 17g hz low noise amplifier ref. : dscha3656 - qag3156 - 05 jun 13 10 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) matt tin, lead free (green) 1 - nc 7 - p2 13 - nc units : mm 2 - gnd (2) 8 - n2 14 - d2 from the standard : jedec mo - 220 3 - rf in 9 - gnd (2) 15 - gnd (2) (vggd) 4 - gnd (2) 10 - rf out 16 - d1 17 - gnd 5 - p1 11 - gnd (2) 6 - f1 12 - nc (1) the package outline drawing included to this data - sheet is given for indication. refer to the application note an0017 ( http://www.ums - gaas.com ) for exact package dimensions. (2) it is strongly recommended to ground all pins marked gnd through the pcb board.
5.8 - 17ghz low noise amplifier cha3656 - qag ref. : dscha3656 - qag3156 - 05 jun 13 11 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 definition of the sij reference planes the reference planes used for sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). the input and output reference planes are locate d at 2.65 mm offset (input wise and output wise respectively) from this axis. then, the given sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "evaluation mother board". 2.65 2.65
cha3656 - qag 5.8 - 17g hz low noise amplifier ref. : dscha3656 - qag3156 - 05 jun 13 12 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
5.8 - 17ghz low noise amplifier cha3656 - qag ref. : dscha3656 - qag3156 - 05 jun 13 13 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic lna: 3v, 68 ma
cha3656 - qag 5.8 - 17g hz low noise amplifier ref. : dscha3656 - qag3156 - 05 jun 13 14 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended package footprint refer to the application note an0017 available at http://www.ums - gaas.com for package foot print recommendations. smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd mana gement refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. ordering information qfn 3 x 3 package: cha3656 - qag /xy stick: xy = 20 tape & reel: xy = 21 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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