2016-01-04 1 2016-01-04 silicon npn phototransistor version 1.3 bpx 43 ordering information features: ? spectral range of sensitivity: (typ) 450 ... 1100 nm ? package: metal can (to-18), hermetically sealed ? special: base connection ? suitable up to 125c ? high linearity ? available in groups applications ? photointerrupters ? industrial electronics ? for control and drive circuits type: photocurrent ordering code i pce [a] = 950 nm, e e = 0.5 mw/cm 2 , v ce = 5 v bpx 43 800 q62702p0016 bpx 43-3/4 1250 ... 4000 q62702p3581 bpx 43-4 2000 ... 4000 q62702p0016s004 bpx 43-4/5 2000 q62702p3582 bpx 43-5 3200 q62702p0016s005 note: only one bin within one packing unit (variati on less than 2:1)
2016-01-04 2 version 1.3 bpx 43 maximum ratings (t a = 25 c) characteristics (t a = 25 c) parameter symbol values unit operating and storage temperature range t op ; t stg -40 ... 125 c collector-emitter voltage v ce 50 v collector current i c 50 ma collector surge current ( < 10 s) i cs 200 ma emitter-base voltage v eb 7 v total power dissipation p tot 220 mw thermal resistance r thja 450 k / w esd withstand voltage (acc. to ansi/ esda/ jedec js-001 - hbm) v esd 2000 v parameter symbol values unit wavelength of max. sensitivity (typ) s max 880 nm spectral range of sensitivity (typ) 10% (typ) 450 ... 1100 nm radiant sensitive area (typ) a 0.675 mm 2 dimensions of chip area (typ) l x w (typ) 1.02 x 1.02 mm x mm half angle (typ) ? 15 photocurrent of collector-base photodiode ( = 950 nm, e e = 0.5 mw/cm 2 , v cb = 5 v) (typ) i pcb 11 a photocurrent of collector-base photodiode (e v = 1000 lx, std. light a, v cb = 5 v) (typ) i pcb 35 a capacitance (v ce = 0 v, f = 1 mhz, e = 0) (typ) c ce 23 pf capacitance ( v cb = 0 v, f = 1mhz, e = 0) (typ) c cb 39 pf capacitance ( v eb = 0 v, f = 1mhz, e = 0) (typ) c eb 47 pf dark current (v ce = 20 v) (typ (max)) i ce0 20 ( 100) na
version 1.3 bpx 43 2016-01-04 3 grouping (t a = 25 c, = 950 nm) group min photocurrent max photocurrent typ photocurrent rise and fall time e e = 0.5 mw/cm 2 , v ce = 5 v e e = 0.5 mw/cm 2 , v ce = 5 v e v = 1000 lx, std. light a, v ce = 5 v i c = 1 ma, v cc = 5 v, r l = 1 k? i pce, min [a] i pce, max [a] i pce [a] t r , t f [s] bpx 43-2 800 1600 3800 9 bpx 43-3 1250 2500 6000 12 bpx 43-4 2000 4000 9500 15 bpx 43-5 3200 15000 18 group collector-emitter saturation voltage current gain i c = i pcemin x 0.3, e e = 0.5 mw/cm 2 e e = 0.5 mw/cm 2 , v ce = 5 v v cesat [mv] i pce / i pcb bpx 43-2 200 110 bpx 43-3 220 170 bpx 43-4 240 270 bpx 43-5 260 430 note.: i pcemin is the min. photocurrent of the specified group.
2016-01-04 4 version 1.3 bpx 43 relative spectral sensitivity 1) page 9 s rel = f() photocurrent 1) page 9 i pce = f(e e ), v ce = 5 v collector current 1) page 9 i c = f(v ce ), i b = parameter collector current 1) page 9 i c = f(v ce ), i b = parameter
version 1.3 bpx 43 2016-01-04 5 photocurrent 1) page 9 i pce / i pce (25c) = f(t a ), v ce = 5 v dark current 1) page 9 i ceo = f(v ce ), e = 0 dark current 1) page 9 i ceo = f(t a ), e = 0 collector-base capacitance 1) page 9 c cb = f(v cb ), f = 1 mhz, e = 0
2016-01-04 6 version 1.3 bpx 43 collector-emitter capacitance 1) page 9 c ce = f(v ce ), f = 1 mhz, e = 0 emitter-base capacitance 1) page 9 c eb = f(v eb ), f = 1 mhz, e = 0 power consumption p tot = f(t a )
version 1.3 bpx 43 2016-01-04 7 directional characteristics 1) page 9 s rel = f(?) package outline dimensions in mm (inch). package metal can (to-18), hermetically sealed ?5.6 (0.220)?5.3 (0.209) 2.54 (0.100) spacing ?4.8 (0.189) e c b (2.7 (0.106)) 5.1 (0.201) 4.8 (0.189) 14.5 (0.571)12.5 (0.492) ?0.45 (0.018) radiant gmoy6019 ?4.6 (0.181) 5.4 (0.213) 6.2 (0.244) chip position sensitive area 0.9 (0.035) 1.1 (0.043) 1.1 (0.043) 0.9 (0.035)
2016-01-04 8 version 1.3 bpx 43 approximate weight: 0.3 g ttw soldering iec-61760-1 ttw disclaimer language english will prevail in case of any discre pancies or deviations between the two language word ings. attention please! the information describes the type of component and shall not be considered as assured characteristics . terms of delivery and rights to change design reser ved. due to technical requirements components may c ontain dangerous substances. for information on the types in question please con tact our sales organization. if printed or downloaded, please find the latest ve rsion in the internet. packing please use the recycling operators known to you. we can also help you C get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport . for packing material that is returned to us unsorted or which w e are not obliged to accept, we shall have to invoi ce you for any costs incurred. components used in life-support devices or systems must be expressly authorized for such purpose! critical components* may only be used in life-suppo rt devices** or systems with the express written ap proval of osram os. *) a critical component is a component used in a li fe-support device or system whose failure can reaso nably be expected to cause the failure of that life-support device or system, or to affect its safety or the ef fectiveness of that device or system. **) life support devices or systems are intended (a ) to be implanted in the human body, or (b) to supp ort and/or maintain and sustain human life. if they fail, it i s reasonable to assume that the health and the life of the user may be endangered. 0 0 s oha04645 50 100 150 200 250 300 t t ?c 235 ?c - 260 ?c first wave 20 40 60 80 100 120 140 160 180 200 220 240 second wave 10 s max., max. contact time 5 s per wave preheating t ? 100 ?c 120 ?c 130 ?c typical cooling ca. 3.5 k/s typicalca. 2 k/s ca. 5 k/s continuous line: typical processdotted line: process limits < 150 k
version 1.3 bpx 43 2016-01-04 9 glossary 1) typical values: due to the special conditions of the manufacturing processes of led, the typical data or calculated correlations of technical parameters can only reflect statistical figures. these do not nec essarily correspond to the actual parameters of each single product, which could differ from the typical data a nd calculated correlations or the typical characteristic line. if requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.
2016-01-04 10 version 1.3 bpx 43 published by osram opto semiconductors gmbh leibnizstra?e 4, d-93055 regensburg www.osram-os.com ? all rights reserved.
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