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1416gn - 120e/el /ep datasheet 120 w dme/ l- band radar driver gan power transistor downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 2 microsemi makes no warranty, representation, or guarantee reg arding the information contained herein or the suitability of its products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. the products sold hereunder and any other pro ducts sold by microsemi have been subject to limited testing and should not be used in conjunction with mission - critical equipment or applications. any performance specifications are believed to be reliable but are not verified, and buyer mus t conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end - products. buyer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the buyers responsibilit y to independently determine suitability of any products and to test and verify the same. the information provided by microsemi hereunder i s provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the b uyer. microsemi does not grant, explicitly or implicitly, to an y party any patent rights, licenses, or any other ip rights, whether wi th regard to s uch information itself or anything described by such information. information provided in this document is proprietary to microsemi, and microsemi reserves the right to make any changes to the information in this document or to any products and servic es at any time without notice. about microsemi microsemi corporation (nasdaq: mscc) offers a comprehensive por tfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. products incl ude high - performan ce and radiation - hardened analog mixed - signal integrated circuits, fpgas, socs and asics; power management produc ts; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processin g devices; rf solution s; discrete components; enterprise storage and communication solutions, security technologies and scalable anti - tamper products; ethernet solutions; power - over - ethernet ics and midspans; as well as custom design capabilities and services. mic rosemi is head quartered in aliso viejo, calif., and has approximately 4,800 employees globally. learn more at www.microsemi.com . ?2016 microsemi corporation. all rights reserved. microsemi and the microsemi logo are registered t rademarks of microsemi corporation. all other trademarks and service marks are the pr operty of their respective owners. microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa: +1 (800) 713 - 4113 outside the usa: +1 (949) 380 - 6100 sa les: +1 (949) 380 - 6136 fax: +1 (949) 215 - 4996 e- mail: sales.support@microsemi.com www.microsemi.com downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 3 revision history 1.1 r evision 1.0 revision 1.0 was the first publication of this document. downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 4 contents revision history .............................................................................................................................. 3 1.1 revision 1.0 ................................................................................................................................................ 3 2 product overview .................................................................................................................... 7 2.1 applications ............................................................................................................................................... 7 2.1.1 key features ................................................................................................................................ 8 3 electrical specifications ............................................................................................................ 9 3.1 absolute maximum ratings ....................................................................................................................... 9 3.2 electrical characteri stics at 25 c ............................................................................................................... 9 3.3 functional characteristics at 25 c ............................................................................................................ 9 3.4 typical broadband performance data (300 s, 10% pulsing) .................................................................. 10 4 transistor impedance information ......................................................................................... 11 5 transistor test i nformation .................................................................................................... 12 5.1 transistor test circuit diagram ................................................................................................................ 12 6 package outline and pin information .................................................................................... 13 6.1 55 - qq common source package dimensions and terminal information ................................................ 13 6.2 55 - qqp common source package dimensions and terminal information .............................................. 14 6.3 overall pallet dimensions ........................................................................................................................ 15 downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 5 list of figures figure 1 case outline 55 - qq common source (0.160" 0.550") ................................................................................ 7 figure 2 case outline 55 - qqp common source (0.160" 0.230") .............................................................................. 7 figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") ................................................................................. 7 figure 4 typical broadband performance data graphs ............................................................................................. 10 figure 5 impedance definition ................................................................................................................................... 11 figure 6 transistor test circuit .................................................................................................................................. 12 figure 7 55 - qq package dimensions and terminal information ............................................................................... 13 figure 8 55 - qqp package dimensions and terminal information ............................................................................. 14 figure 9 pallet package dimensions .......................................................................................................................... 15 downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 6 list of tables table 1 absolute maximum ratings ............................................................................................................................ 9 table 2 typical electrical characteristics at 25 c ........................................................................................................ 9 table 3 typical functional characteristics at 25 c ...................................................................................................... 9 table 4 typical broadband performance data (300 s, 10% pulsing) ....................................................................... 10 table 5 component list 1416gn - 120e/el ................................................................................................................. 12 table 6 55 - qq package dimensions .......................................................................................................................... 13 table 7 55 - qqp package dimensions ........................................................................................................................ 14 downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 7 2 p roduct overview the 1416gn - 120e/e l /ep is an internally matched, common source , class ab, gan on sic hemt transist or capable of providing over 17 db typical power gain, 120 w of pulsed rf output power under 300 s pulse width and 10% long term duty cycle pulsing across the 1400 mhz to 1600 mhz band. the transistor has an internal pre - match for optimal performance. th e hermetically sealed transistor is available in two package types, both the bolt - down flan ge 55 - qq package and the solder - down earless flange 55 - qqp package . it is also available mounted in a 50 ? in/out pallet. these three products are sp ecifically designed for use as drivers in dme (distance measurin g equipment) and l - band pulsed radar transmit power amplifiers, and they utilize all - gold metallization and eutectic die attach to provide the highest reliability and superior ruggedness. export classification: ear - 99 . figure 1 case outline 55 - qq common source (0.160" 0.550") figure 2 case outline 55 - qq p common source (0.160" 0.230") figure 3 pallet outline 50 in/out (0.600" 1.200" 0.150") 2.1 a pplications the 1416gn - 120e and the 1416gn - 120el t ransistors and the 1416gn - 120e p pallet are specifically designed for r adar, l - band a vionics, and c ommunications applications. downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 8 2.1.1 key features the following are the key features of the 1416gn - 120e/el /ep e- class earless/eared gan t ransistor products : ? 1400 mhzC 1600 mhz, 120 w p ulsed o utput p ower, 300 s - 10% p ulsing ? common s ource , class ab, 50 v dd b ias voltage ? high e fficiency: >60% typical a cross the f requency b and ? extremely compact s ize ? high p ower g ain: 17 db t ypical ? excellent g ain f latness: 0.1 db t ypica l ? ideal for r adar, l - band a vionics, and c ommunications applications ? utilizes all - gold metallization and eutectic die attach for highest reliability ? 50 in /o ut lumped element , very small footprint , plug -and- play pallets available downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 9 3 e lectrical spe cifications 3.1 a bsolute maximum ratings the following table shows the absolute maximum ratings at 25 c unless otherwise specified. table 1 absolute maximum ratings rating value units maximum p ower d issipation device d issipation at 25 c 265 w maximum v oltage and cur rent drain - source v oltage (v dss ) 125 v gate - source v oltage (v gs ) C 8 to 0 v maximum t emperatures storage t emperature (t stg ) C 55 to 125 c operating j unction t emperature 200 c 3.2 e lectrical characteristics at 25 c th e following table shows the typical electrical characteristics at 25 c table 2 typical electrical characteristics at 25 c symbol characteristics test conditions min typ max units p out output p ower p in = 2.5 w, freq = 1400, 1500, 1600 mhz 120 130 w g p power g ain p in = 2.5 w, freq = 1400, 1500, 1600 mhz 16.8 17.2 db ? d drain e fficiency p in = 2.5 w, freq = 1400, 1500, 1600 mhz 57 65 % dr droop p in = 2.5 w, freq = 1400, 1500, 1600 mhz 0.3 0.6 db vswr -t load m ismatch t olerance p out = 2.5 w, freq = 1500 mhz, 100 s -10% 5:1 ? jc thermal r esistance 300 s , 10% duty c ycle 1.25 c /w bias condition: v dd = 50 v, i dq = 30 ma constant current (v gs = C 2.0 to C 4.5 v typical) 3.3 f unctional characteristics at 25 c table 3 typical functional characteristics at 25 c symbol characteristics test conditio ns min typ max units i d(off) drain leakage current v gs = C8 v, v d = 125 v 12 ma i g(off) gate leakage current v gs = C8 v, v d = 0 v 4 ma downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 10 3.4 t ypical broadband performance data (300 s, 10% pulsing) table 4 typical broadband perfo rmance data (300 s, 10% pulsing) frequency p in (w) p out (w) i d (ma) i rl (db) ? d (%) g p (db) droop (db) 1400 mhz 2.5 134 460 C6.0 64 17.3 0.35 1500 mhz 2.5 144 450 C12.0 69 17.6 0.30 1600 mhz 2.5 132 410 C6.0 71 17.2 0.20 figure 4 typical broadban d performance data graphs downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 11 4 t ransistor impedance information the following diagram shows the transistor impedance information f or 1 416 gn - 120e/el/ep. figure 5 impedance definition input matching network output matching network g s d z s o ur ce z l oad 50 ? 50 ? note : z s o ur ce is looking into the input circuit z l oad is looking into the output circuit for information about source and load impedances for 1416gn - 120e/el/ep , contact your microsemi representative. downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 12 5 t ransistor test i nformation 5.1 t ransistor test circuit diagram figure 6 transistor test circuit note: distance (d) = 0.090"C0.0950" the board material is rogers duroid 6006, 0.250" thickness, and r = 6.15. the following table lists the components for 1416gn - 120e/el . table 5 component list 1416gn - 120e/el item description value c1 chip capacitor a size C atc600s series 68 pf c2 chip capacitor a size C atc600s series 4.7 p f c3 chip capacitor a size C atc600s series 0.9 pf c4 1 chip capacitor a size 470 pf c5 1 chip capacitor 1210 size 4.7 uf c6 chip capacitor a size C atc600s series 3 pf c7 chip capacitor a size C atc600s series 0.5 pf to 0.7 pf c8 chip capacitor a size C atc600s series 1 pf c9 electrolytic capacitor (63 v) 470 uf c10 chip capacitor a size C atc600s series 82 pf r1 chip r esistor size 0805 10 r2 chip r esistor size 0805 5.1 l1 chip i nductor size 0603 47 nh l2 1 chip i nductor size 1608 (500 ma current) 1.2 nh 1. two of these are needed downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 13 6 p ackage outline and p in information the 1416gn - 125e transistor is available in the 55 - qqp case outline and t he 1 416gn - 125el transistor is availa ble in the 55 - qqp case outline. the 1416gn - 125ep is availabl e in the 90 - 1416gn - 250ep pallet outline. all three products are configured for common source operation. 6.1 55- qq common source package dimension s and terminal info rmation figure 7 55 - qq package dimensions and terminal information pin 1: drain, pin 2: source, pin 3: gate table 6 55 - qq package dimensions dim millimeters tol (mm) inches tol (in.) a 13.970 0.250 0.550 0.010 b 4.570 0.250 0.160 0.010 c 3.860 0.330 0.152 0.013 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.700 0.130 0.067 0.005 g 0.130 0.025 0.005 0.001 h 8.130 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 2.54 dia 0.130 0.100 dia 0.005 l 1.270 0.130 0.050 0.005 m 9.530 0.130 0.375 0.005 downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 14 6.2 55- qqp common source package dimension s and terminal information figure 8 55 - qqp package dimensions and terminal information pin 1: drain, pin 2: source, pin 3: gate table 7 55 - qqp package dimensions dim millimeters tol (mm) inches tol (in.) a 5.840 0.250 0.230 0.010 b 4.060 0.250 0.160 0.010 c 3.170 0.050 0.125 0.002 d 1.270 0.130 0.050 0.005 e 1.020 0.130 0.040 0.005 f 1.570 0.130 0.062 0.005 g 0.130 0.020 0.005 0.001 h 8.120 0.250 0.320 0.010 i 45 5 45 5 j 5.080 0.250 0.200 0.010 k 1.400 0.130 0.055 0.005 downloaded from: http:///
120 w dme/l - band radar driver gan power transistor 15 6.3 overall pallet dimensions figure 9 pallet package dimensions dimensions 1.20 0" 0.600" 0.150" downloaded from: http:///

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