tssmi-donduato'i zptoaucti, {jnc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 the rf mosfet line rf power field-effect transistor n-channel enhancement-mode .. . designed for wideband large-signal amplifier and oscillator applications up to 400 mhz range. ? guaranteed 28 volt, 150 mhz performance output power = 5.0 watts minimum gain = 11 db efficiency ? 55% (typical) ? small-signal and large-signal characterization ? typical performance at 400 mhz, 28 vdc, 5.0 w output = 10.6 db gain ? 100% tested for load mismatch at all phase angles with 30:1 vswr ? low noise figure ? 2.0 db (typ) at 200 ma, 150 mhz ? excellent thermal stability, ideally suited for class a operation maximum ratings MRF134 5.0 w, to 400 mhz n-channel mos broadband rf power fet case 211-07, rating drain-source voltage drain-gate voltage (rgs = 1 -0 mq) gate-source voltage drain current ? continuous total device dissipation @ tc = 25c derate above 25c storage temperature range symbol vds$ vdgr vgs id pd tstg value 65 65 40 0.9 17.5 0.1 -65 to +150 unit vdc vdc vdc adc watts w/c c thermal characteristics rating thermal resistance, junction to case symbol rsjc value 10 unit c/w handling and packaging ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. nj semi-conductois reserves the right to change test conditions, parameter limits and package dimensions without not.ce. fnformat,on furnished b> nj semi-conductors is believed to be both accurate l reliable at the tl o?go ng to p??. however, nj sem.-conductors assumes no responsibility for any errors or omissions discovered in its use m .vrm-( unductors entourages customers to verify that datasheets are current before placing orders. oiinljfv
electrical characteristics (tc = 25c unless otherwise noted.) characteristic symbol win typ max unit off characteristics drain-source breakdown voltage (vgs = 0, id = 5.0 ma) zero gate voltage drain current (vds = 28 v, vqs = 0) gate-source leakage current (vgs = 20 v, vds = ) v(br)dss !dss !gss 65 ? ? ? ? ? ? 1.0 1.0 vdc madc u.adc on characteristics gate threshold voltage (!q = 10 ma, vds = 10 v) forward transconductance (vds = 10 v, id = 100 ma) vgs(th) 9fs 1.0 80 3.5 110 6.0 ? vdc mmhos dynamic characteristics input capacitance (vds = 28 v. vgs = o, f = 1 .0 mhz) output capacitance (vds = 28 v- vgs = o, f = 1 .0 mhz) reverse transfer capacitance (vds = 28 v, vgs = o, f = 1 .0 mhz) cjss cqss crss ? ? ? 7.0 9.7 2.3 ? ? ? pf pf pf functional characteristics noise figure (vds = 28 vdc, id = 200 ma, f = 150 mhz) common source power gain (vdd = 28 vdc, pout = 5.0 w, idq = 50 ma) f =150 mhz (fig. 1) f = 400 mhz (fig. 14) drain efficiency (fig. 1) (vdd = 28 vdc, pout = 5.0 w, f = 150 mhz, idq = 50 ma) electrical ruggedness (fig. 1) (vdd = 28 vdc, pout = 5.0 w, f = 150 mhz, idq = 50 ma, vswr 30:1 at all phase angles) nf gps t! v ? 11 50 2.0 14 10.6 55 ? ? ? db db % no degradation in output power l4 rf input] r3* ' v r2 r4 x 'wv? (-7 k t j"1 ^ l3^ 1 ? 1 1 ^ i c5 ?k c6 1 t ? i ithi it l2 / out ? fa c1.c4 ?arco406, 15-115 pf c2 ?arco403, 3.0-35 pf c3 ?arco402, 1.5-20pf c5, c6, c7, c8, c12 ? 0.1 nf erie redcap c9 ? 10 nf, 50v c10, c11 ?680 pf feedthru d1 ? 1n5925a motorola zener l1 ? 3 turns, 0.310" id, #18 awg enamel, 0.2" long l2 ? 3-1/2 turns, 0.310" id, #18 awg enamel, 0.25" long l3 ? 20 turns, #20 awg enamel wound on r5 l4 ? ferroxcube vk-200 ? 19/4b r1 ? 68 o, 1.0 w thin film r2 ? 10 kq, 1/4 w r3 ? 10 turns, 10 ki beckman instruments 8108 r4 ? 1.8kq, 1/2 w r5 ? 1.0 mj, 2.0 w carbon board ?g10,62 mils figure 1.150 mhz test circuit
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