page:p2 - p 1 plastic - encapsulate transistors guangdong hottec h industrial co,. ltd. fe a tures high vol t age marking : a4 4 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 4 00 v col l ector - emitter v o l t age v ceo 4 00 v emitter - base v o l t a g e v ebo 5 v col l ector cur re n t - conti n u o us i c 200 ma col l ector p o w e r dissi p a t i on p c 625 mw juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 - 150 electrical characteristics (tamb=25 unless otherwise specified) p a r a m e ter s y mbol t es t c ondit i ons min typ m ax unit collector - base breakd o w n v o l t age v cbo i c = 100 a , i e =0 400 v collector - emitter bre a kd o w n v ol t age v ceo i c = 1 ma , i b =0 400 v emitter - base breakd o w n v o l t age v ebo i e = 100 a, i c =0 5 v collector cut - off cur rent i cbo v cb =400 v , i e =0 0.1 a a collector cut - off current i ceo v ce =400 v 5 a emitter cut - off current i ebo v eb = 4 v , i c =0 0.1 a dc c urr e nt gain h fe (1) v ce =10v , i c = 1 0ma 80 300 h fe(2) v ce =10 v , i c = 1 ma 70 h fe(3) v ce =10 v , i c =100ma 40 h fe(4) v ce =10 v , i c =50ma 80 collector - emitter satu r ation v o l t age v ce(sat) i c =10ma, i b = 1 ma 0.2 v v ce(sat) i c =50ma, i b = 5 ma 0.3 v base - emitter sa t a r ation v ol t age v be(sat) i c =10ma, i b = 1ma 0.75 v t r a n s ition f r e qu e ncy f t v ce =20 v , i c =10ma ,f =30mhz 50 mhz classification of hfe rank a b 1 b 2 c r a nge 80 - 1 0 0 100 - 15 0 150 - 20 0 200 - 30 0 ( n p n ) a a 1. emitter 2. base to - 92 3. collecto A44
page:p2 - p 2 plastic - encapsulate transistors guangdong hottec h industrial co,. ltd. a4 4 typical characteristics 10 1 10 100 1000 11 01 0 0 100 11 01 0 0 10 1 10 100 0.2 0.4 0.6 0.8 1.0 11 01 0 0 0 50 100 150 200 0 5 10 15 20 25 0 5 10 15 f=1mhz i e =0 / i c =0 t a =25 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =20v t a =25 i c f t ?? t a =100 common emitter v ce = 10v t a =25 collector current i c (ma) dc current gain h fe i c h fe ?? collector current i c (a) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat ?? 3 1 30 10 1000 100 200 200 t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (a) 200 common emitter t a =25 80ua 72ua 64ua 56ua 48ua 40ua 32ua 24ua 16ua i b =8ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic
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