solid state devices, inc. ssg42n60 series data sheet #: TG0002a maximum ratings symbol units value i c(pk) i ifsm 140 300 peak collector current collector-emitter voltage v ceo 600 amps volts w o c/w 50 amp 600 volts fast power igbt thermal resistance, junction to case r jc total device dissipation @ t c = 25 o c p d v ge e e e e e 20 gate emitter voltage volts designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. ssg42n60 n _ tx part number /ordering information 1/ screening 2/ : _ = not screened tx = tx level txv = txv level s = space level lead bend 3/ 4/ _ = straight ub = up bend db = down bend package: 3/ n = to-258, isolated p = to-259, isolated s2 = smd2 application notes: ? 600v igbt technology ? positive temperature coefficient for ease of paralleling ? high current switching for motor drives and inverters ? low saturation voltage at high currents. ? low switching losses. ? high short circuit capability ? mos input, voltage controlled. ? ultra fast free wheeling diodes ? hermetic sealed construction. ? tx, txv, and s-level screening available. o c operating and storage temperature t j, t stg -65 to +200 200 0.8 0.7 i c i o 70 42 40 continuous collector current @ t c = 25 o c @ t c = 90 o c average diode current @ t c = 25 o c amps 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com to-259 (p) smd2 (s2) to-258 (n) n, p s2
solid state devices, inc. v 600 - v (br)ces collector - emitter breakdown voltage (v ge = 0v, i c = 2ma) v 35 gate - emitter threshold voltage (v ge = v ce , i c = 1ma) a ma - - 150 12 i ces zero gate voltage collector current (v ce = 600v, v ge = 0v) - 120 i ges gate - emitter leackage current (v ge = 30v, v ce = 0v) pf -- c iss min max electrical characteristics 5/ symbol units -pf output capacitance (v ce = 25v, v ge = 0v, f = 1mhz) - c oss (v cc = 400v, i c = 50a dc , v ge = 15 / 0v, r g = -- ? , t p = 10 sec, duty cycle 1% t j = 150 o c) turn-on delay time t d(on) - nsec v ge (th) - notes: * pulse test: pulse width = 300us, duty cycle = 2% 1/ for ordering information, price, and availability contact factory. 2/ screening per mil-prf-19500. 3/ for package outlines contact factory. 4/ up and down bend configurations available for n and p (to-258 and to-259) packages only. 5/ all electrical characteristics @25 o c, unless otherwise specified. ssg42n60 series reverse transfer capacitance (v ce = 25v, v ge = 0v, f = 1mhz) - c rss turn-off delay time rise time t r - nsec t d(off) - nsec - - v - 2.5 collector - emitter saturation voltage (v ge = 15v, i c = 50a) v ce (sat) 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com pin assignment emitter gate pin 3 pin 3 collector package pin 2 pin 2 pin1 pin 1 to-258 to-259 available part numbers: ssg42n60n ssg42n60ndb ssg42n60nub ssg42n60p ssg42n60pdb ssg42n60pub ssg42n60s2 pin 3 pin 2 pin 1 smd2 na input capacitance (v ce = 25v, v ge = 0v, f = 1mhz) -pf fall time t f - nsec - - 4 - - - 2750 typ 250 25 50 30 500 2 360 t j = 25 o c t j = 100 o c reverse diode forward voltage drop (v ge = 0v) - v f 1.35 1.55 v - i f = 20a i f = 40a reverse diode reverse recovery time (i f = 0.5a, i r = 1a, i rr = 0.25a) - t rr 35 nsec -
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