maximum ratings: (t a =25c) symbol units gate-cathode forward voltage v gkf 40 v gate-cathode reverse voltage v gkr 5.0 v gate-anode reverse voltage v gar 40 v anode-cathode voltage v ak 40 v peak non-repetitive forward current (t=10s) i tsm 5.0 a peak repetitive forward current (t=20s, d.c.=1.0%) i trm 2.0 a peak repetitive forward current (t=100s, d.c.=1.0%) i trm 1.0 a dc forward anode current i t 150 ma dc gate current i g 50 ma power dissipation p d 350 mw storage temperature t stg -55 to +150 c operating junction temperature t j -50 to +100 c electrical characteristics: (t a =25c unless otherwise noted) CMPP6027 cmpp6028 symbol test conditions min max min max units i gao v s =40v 10 10 na i gks v s =40v 50 50 na i p v s =10v, r g =1.0m ? 2.0 0.15 a i p v s =10v, r g =10k ? 5.0 1.0 a i v v s =10v, r g =1.0m ? 50 25 a i v v s =10v, r g =10k ? 70 25 a i v v s =10v, r g =200 ? 1.5 1.0 ma v t v s =10v, r g =1.0m ? 0.2 1.6 0.2 0.6 v v t v s =10v, r g =10k ? 0.2 0.6 0.2 0.6 v v f i f =50ma 1.5 1.5 v v o v b =20v, c c =0.2f 6.0 6.0 v t r v b =20v, c c =0.2f 80 80 ns CMPP6027 cmpp6028 surface mount programmable unijunction silicon transistor sot-23 case central semiconductor corp. tm r0 (05-september 2002) description: the central semiconductor CMPP6027, cmpp6028 types are silicon programmable unijunction transistors, manufactured in a surface mount sot-23 package, designed for adjustable (programmable) characteristics such as, valley current (i v ), peak current (i p ), and intrinsic standoff ratio ( ). marking code: CMPP6027 - p27 cmpp6028 - p28
central semiconductor corp. tm sot-23 case - mechanical outline CMPP6027 cmpp6028 surface mount programmable unijunction silicon transistor r0 (05-september 2002) lead code: 1) cathode 2) anode 3) gate marking code: CMPP6027 - p27 cmpp6028 - p28
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