APTM50DHM65T3G APTM50DHM65T3G C rev 1 october, 2012 www.microsemi.com 1 C 6 32 4 16 q4 cr3 3 13 r1 31 7 14 8 19 30 29 22 q1 18 cr2 23 15 1615 18 20 23 22 13 11 12 14 87 2930 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 absolute maximum ratings these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 51 i d continuous drain current t c = 80c 38 i dm pulsed drain current 270 a v gs gate - source voltage 30 v r dson drain - source on resistance 78 m ? p d maximum power dissipation t c = 25c 390 w i ar avalanche current (repetitive and non repetitive) 42 a v dss = 500v r dson = 65m ? typ @ tj = 25c i d = 51a @ tc = 25c application ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? power mos 8? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant asymmetrical - bridge mosfet power module downloaded from: http:///
APTM50DHM65T3G APTM50DHM65T3G C rev 1 october, 2012 www.microsemi.com 2 C 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i dss zero gate voltage drain current v ds = 500v v gs = 0v t j = 125c 1000 a r ds(on) drain C source on resistance v gs = 10v, i d = 42a 65 78 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 4 5 v i gss gate C source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 10800 c oss output capacitance 1164 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 148 pf q g total gate charge 340 q gs gate C source charge 75 q gd gate C drain charge v gs = 10v v bus = 250v i d = 42a 155 nc t d(on) turn-on delay time 60 t r rise time 70 t d(off) turn-off delay time 155 t f fall time resistive switching @ 25c v gs = 15v v bus = 333v i d = 42a r g = 2.2 ? 50 ns diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current t c = 80c 60 a i f = 60a 1.7 2.3 i f = 120a 2 v f diode forward voltage i f = 60a t j = 125c 1.4 v t j = 25c 70 t rr reverse recovery time t j = 125c 140 ns t j = 25c 100 q rr reverse recovery charge i f = 60a v r = 400v di/dt = 200a/s t j = 125c 690 nc downloaded from: http:///
APTM50DHM65T3G APTM50DHM65T3G C rev 1 october, 2012 www.microsemi.com 3 C 6 thermal and package characteristics symbol characteristic min typ max unit mosfet 0.32 r thjc junction to case thermal resistance diode 0.85 c/w v isol rms isolation voltage, any terminal to case t =1 min,50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ?? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 sp3 package outline (dimensions in mm) see application note apt0501 - mounting instructions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTM50DHM65T3G APTM50DHM65T3G C rev 1 october, 2012 www.microsemi.com 4 C 6 typical mosfet performance curve low voltage output characteristics t j =25c t j =125c 0 50 100 150 200 250 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) v gs =10v low voltage output characteristics 5.5v 6v 6.5v 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =7,8 &10v t j =125c normalized r dson vs. temperature 0.5 1 1.5 2 2.5 25 50 75 100 125 150 t j , junction temperature (c) v gs =10v i d =42a r dson , drain to source on resistance ciss crss coss 10 100 1000 10000 100000 0 50 100 150 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage transfert characteristics t j =25c t j =125c 0 25 50 75 100 125 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle gate charge vs gate to source v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 0 60 120 180 240 300 360 gate charge (nc) v gs , gate to source voltage i d =42a t j =25c t j =25c t j =125c 0 25 50 75 100 125 00.20.40.60.811.2 v sd , source to drain voltage (v) i sd , reverse drain current (a) drain current vs source to drain voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration downloaded from: http:///
APTM50DHM65T3G APTM50DHM65T3G C rev 1 october, 2012 www.microsemi.com 5 C 6 typical diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 40 80 120 160 200 0.00.51.01.52.02.53.0 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 30 a 60 a 120 a 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 30 a 60 a 120 a 50 75 100 125 150 175 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 30 a 60 a 120 a 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 100 200 300 400 500 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 20 40 60 80 100 25 50 75 100 125 150 175 case temperature (c) i f (a) dc forward current vs. case temp. duty cycle = 0.5 t j =175c downloaded from: http:///
APTM50DHM65T3G APTM50DHM65T3G C rev 1 october, 2012 www.microsemi.com 6 C 6 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life - support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaim s any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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