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FDMD8630 dual n-channel powertrench ? mosfet www.onsemi.com semiconductor components industries, llc, 2017 publication order number: apr, 2017, rev. 1.0 FDMD8630 1 power 5 x 6 g1 d1 d1 d1 s1,s2 to backside d2 d2 d2 g2 1 2 3 4 8 7 6 5 top bottom pin 1 g1 d1 d1 d1 d2 d2 d2 g2 s1 / s2 pin 1 FDMD8630 dual n-channel powertrench ? mosfet 30 v, 167 a, 1.0 m features ? common source configuration to eliminate pcb routing ? large source pad on bottom of package for enhanced thermals ? max r ds(on) = 1.0 m at v gs = 10 v, i d = 38 a ? max r ds(on) = 1.3 m at v gs = 4.5 v, i d = 33 a ? ideal for flexible layout in secondary side synchronous rectification ? 100% uil tested ? termination is lead-free and rohs compliant general description this package integrates tw o n-channel devices connected internally in common-source co nfiguration. this enables very low package parasitics and optimized thermal path to the common source pad on the bottom. provides a very small footprint (5 x 6 mm) for higher power density. applications ? isolated dc-dc synchronous rectifiers ? common ground load switches mosfet maximum ratings t a = 25 c unless otherwise noted. thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous t c = 25 c (note 5) 167 a -continuous t c = 100 c (note 5) 106 drain current -continuous t a = 25 c (note 1a) 38 -pulsed (note 4) 1178 e as single pulse avalanche energy (note 3) 726 mj p d power dissipation t c = 25 c 43 w power dissipation t a = 25 c (note 1a) 2.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 2.9 c/w r ja thermal resistance, junction to ambient (note 1a) 55 device marking device package reel size tape width quantity FDMD8630 FDMD8630 power 5 x 6 13 ?? 12 mm 3000 units
FDMD8630 dual n-channel powertrench ? mosfet www.onsemi.com 2 electrical characteristics t j = 25 c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 30 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 15 mv/c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.6 3.0 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -6 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 38 a 0.6 1.0 m v gs = 4.5 v, i d = 33 a 0.8 1.3 v gs = 10 v, i d = 38 a, t j = 125 c 0.9 1.5 g fs forward transconductance v dd = 5 v, i d = 38 a 281 s c iss input capacitance v ds = 15 v, v gs = 0 v f = 1 mhz 7090 9930 pf c oss output capacitance 2025 2835 pf c rss reverse transfer capacitance 212 300 pf r g gate resistance 0.1 1.9 3.8 t d(on) turn-on delay time v dd = 15 v, i d = 38 a v gs = 10 v, r gen = 6 14 26 ns t r rise time 15 27 ns t d(off) turn-off delay time 66 105 ns t f fall time 24 39 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 15 v i d = 38 a 97 142 nc q g(tot) total gate charge v gs = 0 v to 4.5 v 46 74 nc q gs gate to source charge 17 nc q gd gate to drain ?miller? charge 12 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 38 a (note 2) 0.8 1.3 v v sd source to drain diode forward voltage v gs = 0 v, i s = 2 a (note 2) 0.7 1.2 v t rr reverse recovery time i f = 38 a, di/dt = 100 a/ s 64 103 ns q rr reverse recovery charge 56 90 nc a. 55 c/w when mounted on a 1 i n 2 pad of 2 oz copper b.125 c/w when mounted on a minimum pad of 2 oz copper g df ds sf ss g df ds sf ss notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0 %. 3. e as of 726 mj is based on starting t j = 25 o c, l = 3 mh, i as = 22 a, v dd = 30 v, v gs = 10 v. 100% tested at l = 0.1 mh, i as = 70 a 4. pulsed id please refer to fig 11 soa graph for more details. 5. computed continuous current limited to max junction temperatur e only, actual continuous current will be limited by thermal & electro-mechanical application board design.
FDMD8630 dual n-channel powertrench ? mosfet www.onsemi.com 3 typical characteristics t j = 25 c unless otherwise noted. figure 1. 0.00.20.40.60.8 0 50 100 150 200 v gs = 4 v v gs = 4.5 v v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 10 v v gs = 3 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0 40 80 120 160 200 0 1 2 3 4 5 6 v gs = 3.5 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 4 v v gs = 4.5 v v gs = 3 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs. drain current and gate voltage figure 3. -75 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 i d = 38 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) n o r m a l i z e d o n r e s i s t a n c e vs. junction temperature figure 4. 24681 0 0 2 4 6 8 10 t j = 125 o c i d = 38 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n r e s i s t a n c e v s . g a t e t o source voltage figure 5. 01234 0 40 80 120 160 200 t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c t j = 25 o c i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 6. 0.00.20.40.60.81.01.2 0.001 0.01 0.1 1 10 100 200 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs. source current
FDMD8630 dual n-channel powertrench ? mosfet www.onsemi.com 4 f i g u r e 7 . g a t e c h a r g e c h a r a c t e r i s t i c s 0 20406080100 0 2 4 6 8 10 i d = 38 a v dd = 20 v v dd = 10 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 15 v figure 8. 0.1 1 10 30 100 1000 10000 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s . d r a i n to source voltage figure 9. 0.01 0.1 1 10 100 1000 1 10 100 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) unclamped inductive switching capability figure 10. 25 50 75 100 125 150 0 40 80 120 160 200 v gs = 4.5 v r t jc = 2.9 o c/w v gs = 10 v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs. case temperature figure 11. 0.01 0.1 1 10 100200 0.01 0.1 1 10 100 1000 3000 10 p s curve bent to measured data 100 p s 10 ms 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t jc = 2.9 o c/w t c = 25 o c f o r w a r d b i a s s a f e operating area figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 10000 100000 single pulse r t jc = 2.9 o c/w t c = 25 o c p ( pk ) , peak transient power (w) t, pulse width (sec) s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25 c unless otherwise noted.
FDMD8630 dual n-channel powertrench ? mosfet www.onsemi.com 5 figure 13. junction-to-case transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 2 single pulse duty cycle-descending order r(t), normalized effective transient thermal resistance t, rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: z t jc (t) = r(t) x r t jc r t jc = 2.9 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z t jc (t) + t c typical characteristics t j = 25 c unless otherwise noted.
c l l c pkg pkg 5.000.10 6.000.10 c 3.48.05 0.56.10 top view side view bottom view 1 4 8 5 8 7 6 5 1 2 3 0.10 c a b 0.05 c notes: a) package reference : to jedec registration, mo-240b, variation aa . b) all dimensions are in millimeters. c) dimensions do not include burrs or mold flash. mold flash or burrs does not exceed 0.10mm. d) dimensioning and tolerancing per asme y14.5m-2009 e) it is recommended to have no traces or vias within the keep-out area f) drawing file name: pqfn08orev1 see detail a (scale: 2x) 0.05 0.00 0.30 0.20 0.08 c pin #1 indicator seating plane 0.10 c 0.80 0.70 recommended land pattern 1 2 3 4 5 6 7 8 1.27 1.56.10 a 0.10 c 2x b 0.10 c 2x 4 0.30.05 0.42.05 0.52 (8x) 0.39 typ 0.70 typ (6x) (1.74) 3.48.05 0.30.05 (6x) (0.92) 0.76 3.42 (2x) 1.72 (2x) 0.60 (2x) 3.58 5.00 6.22 1.79 (0.78) 1.79 1.91 3.81 1.27 0.72 (6x) keep-out area 0.30 (2x) 0.97 2x 2x 4x 2x (1.04) 2x 0.70 (2x) 2.88
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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