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2N341 ST72264G 32156SF4 FR9310 NJU6014L PB61CA 1V225 NTE983
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  zpioducta., fine. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 silico n np n powe r transisto r BDT91/93/9 5 descriptio n ? d c curren t gain - mfe = 20~200 @ l c = 4 a ? collector-emitte r sustainin g voltage - : vceo(sus ) = 60v(min) - BDT91 ; sov(min) - bdt93 ; 100v(min)-bdt9 5 ? complemen t t o typ e bdt92/94/9 6 application s ? designe d fo r us e i n audi o outpu t stage s an d genera l amplifie r an d switchin g applications . absolut e maximu m ratings(t a =25r ) symbo l vcb o vce o veb o i c ic m i b p c t j tst g paramete r collector-bas e voltag e collector-emitte r voltag e bdt9 1 bdt9 3 bdt9 5 bdt9 1 bdt9 3 bdt9 5 emitter-bas e voltag e collecto r current-continuou s collecto r current-pea k bas e current-continuou s collecto r powe r dissipatio n @ t c =25 c junctio n temperatur e storag e temperatur e rang e valu e 6 0 8 0 10 0 6 0 8 0 10 0 7 1 0 2 0 4 9 0 15 0 -65-15 0 uni t v v v a a a w " c c therma l characteristic s symbo l rthj- c r t h j- a paramete r therma l resistance , junctio n t o cas e therma l resistance.junctio n t o ambien t ma x 1. 4 7 0 uni t c/ w "c/ w i h pi n 1.bas e 2.collecto r 3.biiitte r to-220 c packag e u 1 t t i h k f i t 4 - * mi.r o h di m a b c d f 0 h , u k l q r s u v b h v * f - -ik l if m wi n 15.7 0 9.9 0 4.2 0 0.7 0 3.4 0 4.9 8 2.7 0 0.4 4 13.2 0 1.1 0 2.7 0 2.5 0 1.2 9 6.4 5 8.0 6 ? ? m max 15.9 0 10.1 0 4.4 0 0.9 0 3.6 0 5.1 8 2.9 0 0.4 6 13.4 0 1.3 0 2.9 0 2.7 0 1.3 1 0.6 5 8.8 6 * s w ? *?- ? j ? " ? qualit y semi-conductor s downloaded from: http:///
silico n np n powe r transisto r BDT91/93/9 5 electrica l characteristic s t c =25' c unles s otherwis e specifie d symbo l vceoisus ) vcesat m vce(sat)- 2 vbeioi d icb o i ce o ieb o hpe- 1 hpe- 2 f i paramete r collector-emitte r sustainin g voltag e bdt9 1 bdt9 3 bdt9 5 collector-emitte r saturatio n voltag e collector-emitte r saturatio n voltag e base-emitte r o n voltag e collecto r cutof f curren t collecto r cutof f curren t emitte r cutof f curren t d c curren t gai n d c curren t gai n current-gai n bandwidt h produc t condition s lc = 100ma ; i b = 0 lc = 4a ; i b = 0.4 a i c =10a;i b =3.3 a lc = 4a ; v ce = 4 v vcb = vcbomax i !e = 0 vcb= 1 / 2 vcbo?x ; !e = 0,tj=150x : vce = vceoma x v ; i b = 0 v eb = tv ; l c = 0 lc = 4 a ; vce = 4 v lc = 10a;v ce =4 v lc = 500m a ;v ce = 10 v mi n 6 0 8 0 10 0 2 0 5 4 typ . ma x 1 3 1. 6 0. 1 5 1 1 20 0 uni t v v v v m a m a m a mh z switchin g time s to n tof f turn-o n tim e turn-of f tim e b a&- u., i? n 4 a 0. 5 2 1 4 n s p s downloaded from: http:///


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