unisonic technologies co., ltd up3855 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2015 unisonic technologies co., ltd qw-r225-007.a pnp medium power low saturation transistor ? description the utc up3855 is a transistor with low saturation voltage. it provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions and dc-dc circuits. ? features * extremely low saturation voltages * peak current up to 10a * 4a continuous current ? ordering information pin assignment ordering number package 1 2 3 packing UP3855G-AA3-R sot-223 b c e tape reel note: pin assignment: b: base c: collector e: emitter ? marking
up3855 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r225-007.a ? absolute maximum rating (t a =25c, unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -180 v collector-emitter voltage v ceo -140 v emitter-base voltage v ebo -7 v continuous collector current (note 1) i c -4 a peak pulse current i cm -10 a 3.0 (note 1) power dissipation p d 1.6 (note 2) w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal resistance parameter symbol ratings unit 42 (note 1) junction to ambient ja 78 (note 2) c/w notes: 1. for a device surface mounted on 52mm x 52mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air conditions. 2. for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. ? electrical characteristics (t a = 25c unless otherwise stated) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =-100 a -180 -200 v collector-emitter breakdown voltage v cer i c =-1 a, rb 1k ? -180 -200 v collector-emitter breakdown voltage v ceo i c =-10ma (note 1) -140 -160 v emitter-base breakdown voltage v ebo i e =-100 a -7.0 -8.0 v v cb =-150v <1 -20 na collector cut-off current i cbo v cb =-150v, t a =100c -0.5 a <1 -20 na collector cut-off current i cer v cb =-150v, r 1k ? t a =100c -0.5 a emitter cut-off current i ebo v eb =-6v <1 -10 na i c =-0.1a, i b =-5ma -40 -60 mv i c =-0.5a, i b =-50ma -55 -80 mv i c =-1a, i b =-100ma -85 -120 mv collector-emitter sa turation voltage (note 1) v ce(sat) i c =-3a, i b =-300ma -275 -360 mv base-emitter satura tion voltage v be(sat) i c =-3a, i b =-300ma(note 1) -940 -1040 mv base-emitter turn -on voltage v be(on) i c =-3a, v ce =-5v (note 1) -830 -930 mv i c =-10ma, v ce =-5v 100 225 i c =-1a, v ce =-5v 100 200 300 i c =-3a, v ce =-5v 45 100 static forward current transfer ratio (note 1) h fe i c =-10a, v ce =-5v 5 transition frequency f t i c =-100ma, v ce =-10v f=50mhz 120 mhz output capacitance (note 1) c obo v cb =-10v, f=1mhz 33 pf t on 150 switching times t off i c =-1a, v cc =-50v, i b1 =-i b2 =-100ma 750 ns note: 1. measured under pulsed conditions. pulse width 300 s; duty cycle 2%.
up3855 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r225-007.a ? typical characteristics 1 0.01 collector-emitter voltage,-v ce (v) collector current, -i c (a) 10 1 0.1 0.1 100 1.0s 100 t a= 25oc power dissipatio vs ambient temperature dc 10 10ms 100ms 1ms - v c e ( s a t ) ( v ) 100m 1 v ce(sat) vs. i c 0.0 0.5 1.0 1.5 2.0 collector current, -i c (a) i c /i b =10 25c 55c n o r m a l i s e d g a i n 0.6 0.4 1 h fe vs. i c 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 50 0 150 200 250 250 100 t y p i c a l g a i n ( h f e ) collector current, -i c (a) 55oc 25oc - v b e ( s a t ) ( v ) 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 55c 25c v be(sat) vs. i c collector current, -i c (a) 1.4 i c / i b =10 v ce =5v - v c e ( s a t ) ( v ) 1m 10m 100m 1 v ce(sat) vs. i c collector current, -i c (a) 10m 100m 1 i c /i b =10 i c /i b =20 i c /i b =50 t a =25c - v b e ( o n ) ( v ) 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 55c 25c v be(on) vs. i c collector current, -i c (a) 1.4 v ce =5v 300 s
up3855 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r225-007.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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