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1 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn1440 1. product overview 1.1 general description a gn 14 40 is a two - stage internally matched gan mmic power amplifier which operates between 13 . 7 5 g hz and 1 4.5 0 ghz frequency range. this product is well suited for vsat applications . 1 . 2 features ? frequency range: 13 . 7 5 - 1 4.5 0 g hz ? saturated output power : 4 1 dbm ? power added efficiency: 2 8 % ? small signal gain : 1 8 .5 db ? output third order intercept point: 4 3 dbm ? bias: v dd = + 2 8 v, idd = 35 0 m a, v gg = - 2. 8 v (typical) ? 100% dc and rf tested 1 . 3 applications ? ku band vsat ? point to point radio 1 . 4 package profile & rohs compliance 10 - lead flange package rohs - compliant a gn 1440 data sheet ku band gan power amplifier mmic
2 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn1440 2. summary on product performances 2.1 typical performance test conditions : t = +25 ? c , vdd = + 28 v, cw, z o = 5 0 ?? ? parameters test conditions min typ max units gate bias voltage f = 13.75 - 1 4.50 ghz - 2 . 8 - 2 . 5 v output power at p sat 1) f = 13.75 - 1 4.50 ghz 3 9 41 dbm power gain at p sat 1) f = 13.75 - 1 4.50 ghz 9 11 db drain current at p sat 1) f = 13.75 - 1 4.50 ghz 1 7 00 1900 ma power added efficiency at p sat 1) f = 13.75 - 1 4.50 ghz 28 % gain flatness f = 13.75 - 1 4.50 ghz 0 .5 1 .0 db input retu r n loss f = 13.75 - 1 4.50 ghz - 10 - 6 db out put retu r n loss f = 13.75 - 1 4.50 ghz - 1 4 - 10 db output toi 2 ) f = 10 mhz 2 - tone test output power / tone = +32 dbm 43 dbm supply current vdd = + 28 v 3 5 0 m a 1) p sat : saturated output power 2) toi : third o rder i ntercept p oint 2.2 product specification test conditions : t = +25 ? c , vdd = + 28 v, cw, vgg = - 2 .8 v typical , z o = 5 0 ?? ? parameter min typ max unit frequency 13 .75 1 4. 5 0 g hz small signal gain 18 18 .5 db in put return loss - 10 - 6 db output return loss - 14 - 10 db supply current 350 m a 2.3 absolute maximum ratings parameters max. ratings operati ng case temperature (tc) - 40 to ? 85 ? c storage temperature (tstg) - 55 to ? 1 25 ? c d rain voltage ( v dd ) + 35 v gate voltage ( v gg ) - 5 .0 to - 2.5 v input rf po wer (pin ) + 35 dbm
3 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn1440 2.4 pin descriptions pin pin name description 1 ,5 v g gate voltage 3 rf in input, matched to 50 ohms 6,10 v d drain voltage 8 rf out output, matched to 50 ohms 2,4,7,9 nc no internal connection ( open or connected to gnd )
4 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn1440 3. application : 13 . 7 5 ~ 1 4. 5 0 g hz 3.1 application circuit 3.2 bias ing procedure ? make sure no rf power is applied to the device before continuing. ? pinch off device by setting vgg to - 3 .5 v. ? raise vdd to + 28 v while monitoring drain current. ? raise vgg until drain current reaches 350 m a. vgg should be between - 3 . 5 and - 2 . 5 v . ? apply rf power. ? to improve the thermal and rf performance, asb recommends a heat sink er attached to the bottom of the package with an indium alloy preform . note 1: the capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module.
5 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn1440 3.3 plots of p erformance s s - parameter input / output return loss vs. frequency vdd = +28 v, idd = 350 ma, pin = - 20 dbm small signal gain vs. frequency vdd = + 28 v, idd = 3 50 ma, pin = - 20 dbm 12 12.5 13 13.5 14 14.5 15 15.5 16 frequency (ghz) -30 -25 -20 -15 -10 -5 0 input / output return loss (db) input return loss output return loss 12 12.5 13 13.5 14 14.5 15 15.5 16 frequency (ghz) 0 4 8 12 16 20 24 small signal gain (db)
6 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn1440 output power vs. frequency vdd = +28 v, idd = 350 ma power added efficiency vs. frequency vdd = +28 v, idd = 350 ma output power, idd vs. input power vdd = +28 v, idd = 350 ma output toi vs. output power / tone vdd = +28 v, idd = 350 ma , f = 10 mhz 18 20 22 24 26 28 30 32 34 36 38 40 output power / tone (dbm) 32 34 36 38 40 42 44 46 48 50 52 toi (dbm) 13 13.5 14 14.5 15 frequency (ghz) 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 output power (dbm) pin = +30 dbm pin = +20 dbm pin = +10 dbm pin = +0 dbm -10 -5 0 5 10 15 20 25 30 35 input power (dbm) 0 4 8 12 16 20 24 28 32 36 40 44 output power (dbm) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 idd (ma) 13 13.5 14 14.5 15 frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 power added efficiency (%) pin = +30 dbm pin = +20 dbm pin = +10 dbm pin = +0 dbm
7 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn 14 40 vdd = + 28 v, idd = 350 ma @ 13.75 ghz vdd = + 28 v, idd = 350 ma @ 14.00 ghz vdd = + 28 v, idd = 350 ma @ 14.25 ghz vdd = +28 v, idd = 35 0 ma @ 14.50 ghz output power, drain current vs. input power by t emperature -10 -5 0 5 10 15 20 25 30 35 input power (dbm) 0 4 8 12 16 20 24 28 32 36 40 44 output power (dbm) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 idd (ma) -10 -5 0 5 10 15 20 25 30 35 input power (dbm) 0 4 8 12 16 20 24 28 32 36 40 44 output power (dbm) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 idd (ma) -10 -5 0 5 10 15 20 25 30 35 input power (dbm) 0 4 8 12 16 20 24 28 32 36 40 44 output power (dbm) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 idd (ma) -10 -5 0 5 10 15 20 25 30 35 input power (dbm) 0 4 8 12 16 20 24 28 32 36 40 44 output power (dbm) 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 idd (ma)
8 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn 14 40 vdd = + 28 v, idd = 350 ma f = 10 mhz @ 14.00 ghz vdd = + 28 v, idd = 350 ma , f = 10 mhz @ 14.25 ghz vdd = + 28 v, idd = 350 ma , f = 10 mhz @ 14.50 ghz output toi vs. output power / tone by t emper a ture vdd = + 28 v, idd = 350 ma f = 10 mhz @ 13.75 ghz 18 20 22 24 26 28 30 32 34 36 38 40 output power / tone (dbm) 32 34 36 38 40 42 44 46 48 50 52 toi (dbm) 18 20 22 24 26 28 30 32 34 36 38 40 output power / tone (dbm) 32 34 36 38 40 42 44 46 48 50 52 toi (dbm) 18 20 22 24 26 28 30 32 34 36 38 40 output power / tone (dbm) 32 34 36 38 40 42 44 46 48 50 52 toi (dbm) 18 20 22 24 26 28 30 32 34 36 38 40 output power / tone (dbm) 32 34 36 38 40 42 44 46 48 50 52 toi (dbm)
9 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn 14 40 output toi vs. temperature vdd = + 28 v, idd = 350 ma, f = 10 mhz, output power / tone = + 3 2 dbm output power vs . frequency vdd = + 28 v, idd = 350 ma, pin = + 30 dbm, cw -60 -40 -20 0 20 40 60 80 100 temperature 34 36 38 40 42 44 46 48 50 52 54 toi (dbm) 13 13.5 14 14.5 15 frequency (ghz) 34 36 38 40 42 44 46 48 output power (dbm)
10 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn 14 40 4. mounting instructions for f lange package 4.1 screw mounting 4.1.1 the flange of package should be attached using screws. torque conditions are shown in table 1. table 1. recommended and maximum torque for screw mounting package recommended screw recommended torque maximum torque flange m2.0 10 n - cm (0.9 lb - in) 15 n - cm (1.3 lb - in) 4.1.2 first, tighten the screws with a torque driver set to 5 n - cm 4.1.3 the surface finish of the heat sink er should be better than 0.8 m and the surface flatness must be better than 10 m. 4.1.4 silicon based heat sink compounds should not be used for the thermal conductive grease. it cause s the poor grounding of the source flange, contamination , and long term degradation of the rmal resistance between the package and heat sink er . 4. 2. solder mounting 4. 2 .1 recommended solder is l ead - f ree solder (sn - 3.0ag - 0.5cu) or equivalent. 4.2.2 after soldering, the flux residue should be removed by appropriate cleaning methods. 4.2.3 the recommended soldering conditions are as follows: partial heating method : soldering iron, spot laser/air product terminal temperature: 260 c, max. 10 s ec /terminal or 400 c, max. 3 s ec /terminal
11 / 11 asb inc. ? sales@asb .co.kr june 201 5 a gn 14 40 5. package outline please no te the 1.51 mm of the height of the lead from the bottom of the metal base w hen it is to be mounted. (end of datasheet) units: mm [in]

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