2.0 0.15 4 . 5 0. 1 5 3 . 5 0 . 2 2.3 0.15 1 . 25 0 . 2 0.203max 0.2 0.05 5 . 3 0.2 features mechanical data ratings at 25 o c ambient temperature unless otherwise specified us2d US2G us2j us2k us2m us2d US2G us2j us2k us2m maximum repetitive peak reverse voltage v rrm 200 400 600 800 1000 v max imum rms v oltage v rws 140 280 420 560 700 v max imum dc bloc king v oltage v dc 200 400 600 800 1000 v maximum average f orw ard rectified current @t l = 9 0 o c i f ( a v ) a peak forw ard surge current 8.3ms single half- sine-w ave superimposed on rated load(jedec me th od ) i f s m a maximum instantaneous forw ard voltage at 2a v f v maximum dc reverse current @t a = 2 5 o c at rated dc blockjing voltage @t a = 1 25 o c maximum reverse recovery time at i f =0.5a i r = 1 . 0 a i r r = 0 . 2 5 a t rr ns typical junction capacitance at 4.0v,1mh z c j pf r ja r jl operating temperature range t j o c storage temperature range t stg o c -55--------+150 units 50 100 35 70 50 100 us2a 50 350 -55--------+150 10 40 1 5 i r note: 1.p.c.b.mounted on 0.2x0.2"(5.0x5.0mm)copper pad area 75 us2a---us2m 1111 reverse voltage: 50 - 1000 v f o r w a r d c ur r e n t : 2 .0 a built-in strain relief,ideal for automated placement device marking code s u r f a c e m o u nt r e c t i f i e r s glass passivated chip junctions p l a s t i c pa c k age has u nde r w r i t e r s l abo r a t o r i es vvvv v f l a m m abi li t y c l a ss i f i c a t i on 9 4 v - 0 for surface mount applications do-214aa( s m b ) max imum ther mal r es is tanc e ( note1) o c/w us2b high temperature soldering: 111 250 o c/10 seconds on terminals us2a polarity: color band denotes cathode end w e i gh t : 0 . 00 3 oun c e s , 0 . 0 93 g r am t e r m i na l s : s o l d er p l a t e d , s o l d e r a b l e per m i l - s t d - 750 , 1111 m e t hod 2026 30 50 50 1.0 1.7 2.0 us2b low forward voltage,low power loss low profile package easy pick and place ultrafast recovery times for high efficiency case:jedec do-214aa,molded plastic body over pas s ivated chip m ax i m u m r at i n g s an d e l e c t r ic al c h ar ac t e r i s t i c s dimensions in millimeters www.diode.kr diode semiconductor korea
0.4 0 .0 1 0 . 1 1 0.6 0 .8 1.0 1 .2 1.4 1 .6 us2j-us2m us2a-US2G 1.8 0 pulse width=300 s1%duty cycle t j =25 0 0 resistive or inductive load 25 50 75 1 0 0 1 2 5 1 5 0 1 . 0 2 . 0 2 . 4 1 . 4 0 . 8 0 . 4 0 . 2x0 . 2 " ( 5 . 0x5 . 0 m m ) copper pad areas 0 110 100 tl=110 8.3m s single half sine-w ave (jedec method) 15 10 30 25 5 20 50 45 40 35 0 0 . 1 10 20 40 60 80 1 0 0 0 . 0 1 t j =125 1 25 1 00 ?? 2 5 ?? 1 1 0 0 0.1 1 10 0.01 0.1 1 10 100 100 average forward rectified current ,amperes peak forward surge current ,amperes instantaneous forward current ,amperes instantaneous reverse leakage current(ma) fig.2 -- maximum non-repetitive peak forward surge current reverse voltage(v) t,pulse duration, percent of rated peak reverse voltage. ( ) us2a---us2m fig.3 -- typical instantaneous forward characteristics fig. 4 -- typi cal reverse characteristics fig. 5 -- typi cal junction capaci tance transient thermal impedance ( o c/w) fi g.1 -- forward current derating curve lead temperature number of cycles at 60hz instantaneous forward voltage(v) fig. 6 -- typi cal transient thermal impedance junction capacitance(pf) 0 . 1 1 2 t j =25 0 . 2 0 . 4 1 2 100 4 10 4020 10 4 6 20 40 60 200 100 us2a-us2j us2k,us2m diode semiconductor korea www.diode.kr
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