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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 9.4 i d @ v gs = 12v, t c = 100c continuous drain current 6.0 i dm pulsed drain current 37 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 150 mj i ar avalanche current 5.5 a e ar repetitive avalanche energy 7.5 mj dv/dt peak diode recovery dv/dt 16 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (t ypical) g pre-irradiation international rectifiers rad-hard tm hexfet ? technology technology provides high performance power mosfetsfor space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dcto dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened power mosfet surface mount (smd-0.5) www.irf.com 1 features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight for footnotes refer to the last page smd-0.5 irhnj7230 200v, n-channel product summary part number radiation level r ds(on) i d irhnj7230 100k rads (si) 0.40 ? 9.4a irhnj3230 300k rads (si) 0.40 ? 9.4a irhnj4230 500k rads (si) 0.40 ? 9.4a irhnj8230 1000k rads (si) 0.53 ? 9.4a pd - 93821a rad-hard ? hexfet ? technology downloaded from: http:///
irhnj7230 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 9.4 i sm pulse source current (body diode) 37 v sd diode forward voltage 1.4 v t j = 25c, i s = 9.4a, v gs = 0v t rr reverse recovery time 460 ns t j = 25c, i f = 9.4a, di/dt 100a/ s q rr reverse recovery charge 2.4 c v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.23 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.40 v gs = 12v, i d = 6.0a resistance 0.49 ? v gs = 12v, i d = 9.4a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 2.5 s ( )v ds > 15v, i ds = 6.0a i dss zero gate voltage drain current 25 v ds = 160v, v gs =0v 250 v ds = 160v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = 9.4a q gs gate-to-source charge 10 nc v ds = 100v q gd gate-to-drain (miller) charge 25 t d (on) turn-on delay time 35 v dd = 100v, i d = 9.4a, t r rise time 75 r g = 7.5 ? t d (off) turn-off delay time 70 v gs = 12v t f fall time 60 l s + l d total inductance 4.0 c iss input capacitance 1200 v gs = 0v, v ds = 25v c oss output capacitance 250 p f f = 1.0mhz c rss reverse transfer capacitance 63 na ? nh ns a measured from the center of drain pad to center of source pad c/w note: corresponding spice and saber models are available on international rectifier website. downloaded from: http:///
www.irf.com 3 irhnj7230 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 25 a v ds = 160v, v gs =0v r ds(on) static drain-to-source 0.41 0.54 ? v gs = 12v, i d = 6.0a on-state resistance (to-3) r ds(on) static drain-to-source 0.40 0.53 ? v gs = 12v, i d = 6.0a on-state resistance (smd-0.5) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. 1. part number irhnj72302. part numbers irhnj3230, irhnj4230, irhnj8230 fig a. single event effect, safe operating area v sd diode forward voltage 1.4 1.4 v v gs = 0v, i s = 9.4a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

radiation characteristics table 2. single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v cu 28 285 43 190 180 170 125 br 36.8 305 39 100 100 100 50 0 50 100 150 200 0 -5 -10 -15 -20 vgs vds cu br downloaded from: http:///
irhnj7230 pre-irradiation 4 www.irf.com

1 10 100 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 9.4a downloaded from: http:///
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pre-irradiation 1 10 100 0 500 1000 1500 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 9.4a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 2.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1000 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms downloaded from: http:///
irhnj7230 pre-irradiation 6 www.irf.com $

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $
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25 50 75 100 125 150 0 2 4 6 8 10 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 irhnj7230 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v pre-irradiation 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.2a 5.9a 9.4a downloaded from: http:///
irhnj7230 pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 3.4mh, peak i l = 9.4a, v gs = 12v i sd 9.4a, di/dt 660a/ s, v dd 200v, t j 150c footnotes: case outline and dimensions smd-0.5 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2006 downloaded from: http:///

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