http://www.sanken-ele.co.jp sanken electric DKG1020 aug. 2011 the information included herein is believed to be a ccurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any infringeme nts of patents or other rights of third parties tha t may result from its use. copy right: sanken electric co.,ltd. page 1 features 0? low on-state resistance 0? built-in gate protection diode 0? smd pkg package to252 key specifications 0? v (br)dss =100v (i d =100ua) 0? r ds(on) =52 m max. (v gs =10v, i d =10a) 0? r ds(on) =59 m max. (v gs =4.5v, i d =10a) applications 0? dc / dc converter 0? switching internal equivalent circuit absolute maximum ratings (ta=25c) characteristic symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v continuous drain current i d 20 a maximum power dissipation p d 40 (tc= 25c) w single pulse avalanche energy e as *1 62. 5 mj channel temperature t ch 150 c storage temperature t stg -55 t o + 150 c maximum drain to source dv/dt dv/dt 1 *1 0. 6 v/ns peak diode recovery dv/dt dv/dt 2 *2 5 v/ns peak diode recovery di/dt di/dt *2 100 a/ s *1 v dd =14v, l=1mh, i l =11a, unclamped, see fig.1 *2 is d =20a, see fig.2 ?' ( 1 ) ?3 ( 3 ) ?$ ( 2 ) downloaded from: http:///
http://www.sanken-ele.co.jp sanken electric DKG1020 aug. 2011 the information included herein is believed to be a ccurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any infringeme nts of patents or other rights of third parties tha t may result from its use. copy right: sanken electric co.,ltd. page 2 electrical characteristics (ta=25c) characteristic symbol test conditions limits unit min typ max drain to source breakdown voltage v (br)dss i d =100a,v gs =0v 100 v gate to source leakage current i gss v gs =20v 10 a drain to source leakage current i dss v ds =100v, v gs =0v 100 a gate threshold voltage v th v ds =10v, i d =1ma 1.5 2.0 2.5 v forward transconductance re(yfs) v ds =10v, i d d=10a 9 . 0 s static drain to source on-resistance r ds(on) i d =10a, v gs =10v 41 52 m i d =10a, v gs =4.5v 45 59 input capacitance ciss v ds =10v v gs =0v f=1mhz 2 2 0 0 pf output capacitance coss 2 1 0 reverse transfer capacitance crss 11 0 turn-on delay time td(on) i d =10a, v dd =50v r g =20, r l =5 v gs =10v see fig.3 4 0 ns rise time tr 1 4 0 turn-off delay time td(off) 2 8 0 fall time tf 3 4 0 total gate charge qg v dd =50v v gs =10v i d =20v 47 nc gate to source charge qgs 8 gate to source charge qgd 7 source-drain diode forward voltage v sd i sd =20a,v gs =0v 0.9 1.2 v source-drain diode reverse recovery time trr i sd =20a i/dt=100a/s 5 0 ns source-drain diode reverse recovery time qrr 6 0 nc tharmal resistance junction to case rth(ch-c) 3.125 c/w downloaded from: http:///
http://www.sanken-ele.co.jp sanken electric DKG1020 aug. 2011 the information included herein is believed to be a ccurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any infringeme nts of patents or other rights of third parties tha t may result from its use. copy right: sanken electric co.,ltd. page 3 characteristic curves (tc=25c) 0 5 10 15 20 0 0.5 1 1.5 id (a) vds v) id - vds characteristics (typical) 4.5v vgs=10v 3.0v 3.5v 0 5 10 15 20 0 1 2 3 4 5 id (a) vgs v) id - vgs characteristics (typical) vds=10v tc=-125 75 25 -30 0 20 40 60 0 5 10 15 20 rds(on) (m) id (a) rds(on) - id characteristics (typical) vgs=4.5v 10v 1 10 100 1000 1 10 100 re(yfs) (s) id a) re(yfs) - id characteristics (typical) vds=10v 125 25 tc=-30 75 0 20 40 60 80 100 -75 -50 -25 0 25 50 75 100 125 150 rds(on) (m) tc ( ! ) rds(on) - tc characteristics (typical) vgs=4.5v 10v id=10a 0 0.5 1 1.5 0 5 10 15 20 vds (v) vgs (v) vds - vgs characteristics (typical) id=20a 10a 5a downloaded from: http:///
http://www.sanken-ele.co.jp sanken electric DKG1020 aug. 2011 the information included herein is believed to be a ccurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any infringeme nts of patents or other rights of third parties tha t may result from its use. copy right: sanken electric co.,ltd. page 4 characteristic curves (tc=25c) 10 100 1000 10000 0 10 20 30 40 50 capa (pf) vds (v) capacitance - vds characteristics (typical) vgs=0 v f=1 mhz ciss coss crss 0 5 10 15 20 0 0.5 1 1.5 idr (a) vsd v) idr - vsd characteristics (typical) -30 25 tc=125 75 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 r th(ch-c) ( ! /w) pw (sec) transient thermal resistance - pulse width single pulse 0.1 1 10 100 1 10 100 1000 id (a) vds (v) safe oparating area tc=25 ! single pulse pt=100us pt=1ms 0 10 20 30 40 50 0 50 100 150 (w) tc ( ) pd-tc characteristics with infinite heatsink downloaded from: http:///
http://www.sanken-ele.co.jp sanken electric DKG1020 aug. 2011 the information included herein is believed to be a ccurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any infringeme nts of patents or other rights of third parties tha t may result from its use. copy right: sanken electric co.,ltd. page 5 fig.1 unclamped inductive test method (a) test circuit (b) waveforms fig.2 diode reverse recovery time test method (a) test circuit (b) waveforms fig.3 switching time test method e as = 2 1 ?e l ?e i lp 2 0? dd (br)dss (br)dss v v v - v gs 0v dv/dt 2 i sd i rm trr di/dt v dd v sd t d(on) t r t on t d(off) t f t off 90% 10% 90% 10% v gs v ds duty cycle1% (a) test circuit (b) waveforms downloaded from: http:///
http://www.sanken-ele.co.jp sanken electric DKG1020 aug. 2011 the information included herein is believed to be a ccurate and reliable. however, sanken electric co., ltd assumes no responsibility for its use ; nor for any infringeme nts of patents or other rights of third parties tha t may result from its use. copy right: sanken electric co.,ltd. page 6 o u t l i n e to252 weight approx.0.33g pin assignment (1) gate (2) drain (3) source downloaded from: http:///
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