? semiconductor components industries, llc, 2016 december, 2016 ? rev. 10 1 publication order number: pzt651t1/d pzt651 npn silicon planar epitaxial transistor this npn silicon epitaxial transistor is designed for use in industrial and consumer applications. the device is housed in the sot?223 package which is designed for medium power surface mount applications. sot?223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. the formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. features ? high current ? the sot?223 package can be soldered using wave or reflow ? pnp complement is pzt751t1g ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage v ceo 60 vdc collector?base voltage v cbo 80 vdc emitter?base voltage v ebo 5.0 vdc collector current i c 2.0 adc total power dissipation @ t a = 25 c (note 1) derate above 25 c p d 0.8 6.4 w mw/ c storage temperature range t stg ?65 to 150 c junction temperature t j 150 c thermal characteristics characteristic symbol max unit thermal resistance from junction?to?ambient in free air r ja 156 c/w maximum temperature for soldering purposes time in solder bath t l 260 10 c sec stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. device mounted on a fr?4 glass epoxy printed circuit board using minimum recommended footprint. marking diagram sot?223 case 318e?04 style 1 www. onsemi.com a = assembly location y = year ww = work week = pb?free package sot?223 package high current npn silicon transistor surface mount collector 2, 4 base 1 emitter 3 (note: microdot may be in either location) 1 ayw 651 device package shipping ? ordering information pzt651t1g sot?223 (pb?free) 1,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. SPZT651T1G sot?223 (pb?free) 1,000 / tape & reel 1 2 3 4
pzt651 www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristics symbol min max unit off characteristics collector?emitter breakdown voltage (i c = 10 madc, i b = 0) v (br)ceo 60 ? vdc collector?emitter breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 80 ? vdc emitter?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 5.0 ? vdc base?emitter cutoff current (v eb = 4.0 vdc) i ebo ? 0.1 adc collector?base cutoff current (v cb = 80 vdc, i e = 0) i cbo ? 100 nadc on characteristics (note 2) dc current gain (i c = 50 madc, v ce = 2.0 vdc) (i c = 500 madc, v ce = 2.0 vdc) (i c = 1.0 adc, v ce = 2.0 vdc) (i c = 2.0 adc, v ce = 2.0 vdc) h fe 75 75 75 40 ? ? ? ? ? collector?emitter saturation voltages (i c = 2.0 adc, i b = 200 madc) (i c = 1.0 adc, i b = 100 madc) v ce(sat) ? ? 0.5 0.3 vdc base?emitter voltages (i c = 1.0 adc, v ce = 2.0 vdc) v be(on) ? 1.0 vdc base?emitter saturation voltage (i c = 1.0 adc, i b = 100 madc) v be(sat) ? 1.2 vdc current?gain ? bandwidth (i c = 50 madc, v ce = 5.0 vdc, f = 100 mhz) f t 75 ? mhz product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle = 2.0%
pzt651 www. onsemi.com 3 typical characteristics figure 1. typical dc current gain i c , collector current (ma) 10 h fe , dc current gain 300 0 v ce = 2.0 v t j = 125 c 25 c -55 c 30 60 90 120 150 180 210 240 270 20 50 100 200 500 1.0 a 2.0 a 4.0 a i c , collector current (ma) 50 v, voltage (volts) 2.0 0 v be(sat) @ i c /i b = 10 v be(on) @ v ce = 2.0 v v ce(sat) @ i c /i b = 10 figure 2. on voltages 1.8 1.6 1.4 1.2 1.0 0.4 0.8 0.6 0.2 100 200 500 1.0 a 2.0 a 4.0 a figure 3. collector saturation region i b , base current (ma) 0.05 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v ce , collector-emitter voltage (volts) 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 t j = 25 c i c = 10 ma i c = 100 ma i c = 500 ma i c = 2.0 a
pzt651 www. onsemi.com 4 package dimensions sot?223 (to?261) case 318e?04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 pzt651t1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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