preliminary gan hybrid power amplifier h s1 39 14 2 - 18 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales @rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 1 / 6 version 0. 2 product features application s ? gan on sic hemt ? in/out impedance matching ? surface mount hybrid type ? small size & mass ? high efficiency ? low cost ? point to point ? radio system description the h s 1 39 1 4 2 - 18 a is designed for radio system ap pli cation frequencies from 1 39 0 0 ~ 14 2 0 0mhz. this amplifier uses gan hemt technology which performs high breakdown voltage, high efficiency. high in/output impedance, h igh power d ensity. electrical specification s @ vgs , idq= 1 50 ma, v ds = 40 v, ta=25 , 50ohm system p arameter u nit min typ max condition operating frequency mhz 13900 - 14200 zs = zl = 50ohm operating bandwidth mhz - 300 - - input return loss db - - 10 - - output pulse power @ p 3db dbm - 42.5 - pulse width =100us, 10%duty input pulse power dbm - 36.5 - power gain @ p 3db db - 6 - gain flatness db - 1 .5 - imd dbc - 30 - 30dbm@2tone duty cycle % - 10 - - pulse width us - 100 - - efficiency % - 35 - - caution the drain voltage must be supplied to the device after the gate vol tage is supplied turn on : turn on the gate voltage supply and last turn on the drain voltage supplies turn off : turn off the drain voltage and last turn off the gate voltage n ote h s series have internal dc blocking capacitors a t the rf input and output ports pac kage type : np - 1 8
preliminary gan hybrid power amplifier h s1 39 14 2 - 18 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales @rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 2 / 6 version 0. 2 mechanical specifications parameter u nit t yp remark mass g 1 - dimension L 15 x 1 0 x 5.4 - absolute maximum ratings parameter u nit r ating s ymbol gate - source voltage v - 10 ~ 0 vgs drain - source voltage v 50 v ds gate current m a 4.8 i g ope rating junction temperature c 225 t j operating case temperature c - 4 0 ~ 6 5 t c storage temperature c - 40 ~ 10 0 t stg operating v oltages parameter u nit m in t yp m ax s ymbol drain voltage v - 40 - v ds gate voltage (on - stage) v - vgs@idq - 2 v gs gate v oltage (off - stage) v - - 8 - v gs block diagram +vds - vgs input matching circuit out put matching circuit input output
preliminary gan hybrid power amplifier h s1 39 14 2 - 18 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales @rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 3 / 6 version 0. 2 performance charts * test condition : test frequency = 1 4 . 1 ghz, vgs @idq = 150 ma, vds =+ 40 v, ta=25 out put power vs. in put power power gain vs. out put power 25 27 29 31 33 35 37 39 41 43 45 20 25 30 35 40 pout (dbm) input power (dbm) output power 0 1 2 3 4 5 6 7 8 9 10 11 12 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 power gain (db) output power (dbm) power gain ids vs. out put power efficiency vs. out put power 0 200 400 600 800 1000 1200 1400 1600 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 current (ma) output power (dbm) current 0 5 10 15 20 25 30 35 40 45 50 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 efficiency (%) output power (dbm) efficiency
preliminary gan hybrid power amplifier h s1 39 14 2 - 18 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales @rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 4 / 6 version 0. 2 package dimensions (type: np - 18 ) * u nit: mm[inch] | tolerance: 0.15[.006] * u nit: mm[inch] | tolerance: 0.15[.006] top view side view bottom view pin description pin no function pin no function pin no function pin no function 1 gnd 3 gnd 5 rf output 7 drain bias (+v ds ) 2 rf input 4 gnd 6 gnd 8 gate bias ( - v gs ) recommended pattern * mounting conf iguration notes 1. for the proper performance of the device, ground / thermal via holes must be designed to remove h eat. 2. to properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. we recommend the mounting screws be added near the heatsink to mount the board 3. in designing the necessary rf trace, width will depend upon the pcb material and construction. 4. use 1 oz. copper minimum thickness for the heatsink. 5. do not put solder mask on the backside of the pcb in the region where the board contacts the heatsink 6. we recommend adding as much copper as possible to inner and outer layers near the part to ensure opt imal thermal performance.
preliminary gan hybrid power amplifier h s1 39 14 2 - 18 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales @rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 5 / 6 version 0. 2 precautions this product is a gallium nitride transistor. the gallium nitr ide transistor requires a negative voltage bias which operates alongside a positive voltage bias. th ese biases are applied in accordance to the sequence during turn - on and turn - off. the pallet amplifier does not have a built - in bias sequence circuit. there fore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external bias circuit to this amplifier. the required sequence for power supply is as follows. during turn - on 1. connect gnd. 2. apply vgs 3. app ly v ds 4. apply the rf power. during turn - off 1. turn off rf power. 2. turn off v ds , and then, turn off the vgs 3. remove all connections. turn on turn off - sequence timing diagram -
preliminary gan hybrid power amplifier h s1 39 14 2 - 18 a korea n facilities : 82 - 31 - 250 - 5078 / rfsales @rfhic.com all specifications may change without notice us facility : 919 - 677 - 8780 / sales@rfhicusa.com 6 / 6 version 0. 2 reflow p rofile * reflow oven settings zone a b c d e f temp erature( c) 30 ~ 150 150 ~ 180 180 ~ 220 220 ~ 220 235 ~ 240 2 ~ 6 / sec drop belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * measured reflow profile ordering information part number package design h s1 39142 - 18 a - r (reel) - b (bulk) - ev b (evaluation board) revision history part number release date version modification data sheet status hs139142 - 18a 2014.06 . 26 0. 2 a mass of mechanical specification is changed. preliminary hs139142 - 18a 2013.04. 12 0.11 imd preliminary hs139142 - 18a 2013.03.14 0.1 newly created. preliminary rfhic corporation reserves the right to make changes to any products herein or to discontinue any pr oduct at any time without notice. while product specifications have been thoroughly examined for reliability, rfhic corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. rfhic corporation does not assume any liability for the suitability of its products for any particu lar purpose, and disclaims any and all liability, including without limitation consequential or inci dental damages. rfhic products are not intended for use in life support equipment or application where malfunction o f the product can be expected to result in personal injury or death. buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, prot ect and hold rfhic corporation and its directors, officers, stockholders, emplo yees, representatives and distributors harmless against any and all claims arising out of such unauthorize d use. sales, inquiries and support should be directed to the local authorized geographic distributor for r fhic corporation. for cus tomers in the us , please contact the us sales team at 919 - 6 77 - 8780 . for all other inquiries, please contact the international sales team at 82 - 31 - 250 - 5078.
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