vs-175bgq030 www.vishay.com vishay semiconductors revision: 16-jun-15 1 document number: 94583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky rectifier, 175 a features ? 150 c max. operating junction temperature ? high frequency operation ? ultralow forward voltage drop ? continuous high current operation ? guard ring for enhanced ruggedness and long term reliability ? screw mounting only ? designed and qualified according to jedec ? -jesd 47 ? powertab ? package ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description the vs-175bgq030 schottky re ctifier has been optimized for ultralow forward voltage drop specifically for low voltage output in high current ac/dc power supplies. ? the proprietary barrier techno logy allows for reliable operation up to 150 c junction temperature. typical applications are in switching power supplies, converters, reverse battery protectio n, and redundant power subsystems. product summary package powertab ? i f(av) 175 a v r 30 v v f at i f 0.52 v i rm 650 ma at 125 c t j max. 125 c diode variation single die e as 80 mj cathode anode powertab ? major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 175 a t c 112 c v rrm 30 v i fsm t p = 5 s sine 7400 a v f 175 a pk (typical) 0.47 v t j 150 c t j range -55 to +150 c voltage ratings parameter symbol vs-175bgq030 units maximum dc reverse voltage v r 30 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t c = 112 c, rectangu lar waveform 175 a maximum peak one cycle ? non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 7400 a 10 ms sine or 6 ms rect. pulse 1400 non-repetitive avalanche energy e as t j = 25 c, i as = 12 a, l = 1.12 mh 80 mj repetitive avalanche current i ar current decaying linearly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 12 a
vs-175bgq030 www.vishay.com vishay semiconductors revision: 16-jun-15 2 document number: 94583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage electrical specifications parameter symbol test conditions typ. max. units forward voltage drop v fm (1) 100 a t j = 25 c 0.47 0.49 v 175 a 0.55 0.59 100 a t j = 150 c 0.36 0.39 175 a 0.47 0.52 reverse leakage current i rm (1) t j = 125 c, v r = 15 v 160 220 ma t j = 150 c, v r = 30 v 1400 2000 t j = 25 c v r = rated v r 1.3 4.5 t j = 125 c 450 650 maximum junction capacitance c t v r = 5 v dc , (test signal range 100 khz to 1 mhz), 25 c 8500 pf typical series inductance l s measured from tab to mounting plane 3.5 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg -55 to +150 c maximum thermal resistance, ? junction to case r thjc dc operation 0.25 c/w typical thermal resistance, ? case to heatsink r thcs mounting surface, sm ooth and greased 0.20 approximate weight 5g 0.18 oz. mounting torque minimum 1.2 (10) n m (lbf in) maximum 2.4 (20) marking device case style powertab ? 175bgq045 v fm - forward volta g e drop (v) i f - instantaneous forward current (a) 0.0 0.2 0.4 0.6 0.8 1.0 1 10 100 1000 t j = 25 c t j = 125 c t j = 150 c i r - reverse current (ma) v r - reverse volta g e (v) 0 5 10 15 20 25 30 0.01 0.1 1 10 100 1000 10 000 75 c 100 c 50 c 125 c 150 c 25 c
vs-175bgq030 www.vishay.com vishay semiconductors revision: 16-jun-15 3 document number: 94583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics c t - junction capacitance (pf) v r - reverse volta g e (v) 1000 10 000 0 5 10 15 20 25 30 35 t = 25 c j t 1 , rectangular pulse duration (seconds) thermal impedance z thjc ( c / w ) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 single pulse (thermal resistance) d = 0.2 d = 0.25 d = 0.33 d = 0.5 d = 0.75 average forward current - i f (av) (a) allowable case temperature (c) 0 50 100 150 200 250 300 60 80 100 120 140 160 dc square wave (d=0.50) 80% rated vr applied see note (1) avera g e power loss (w) i f(av) - avera g e forward current (a) 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 180 120 90 60 30 dc rm s limit
vs-175bgq030 www.vishay.com vishay semiconductors revision: 16-jun-15 4 document number: 94583 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - maximum non-re petitive surge current fig. 8 - unclamped inductive test circuit note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r ordering information table links to related documents dimensions www.vishay.com/doc?95240 part marking information www.vishay.com/doc?95370 spice model www.vishay.com/doc?95427 application note www.vishay.com/doc?95179 i f s m - non-repetitive s ur g e current (a) t - s quare wave pulse duration (s) 10 100 1000 10 000 1000 10 000 current monitor high-speed switch d.u.t. r g = 25 + freewheel diode v d = 25 v l irfp460 40hfl40s02 2 - current rating 3 - essential part number 4 - voltage code = v rrm device code 1 3 2 4 vs- 175 bgq 030 1 - vishay semiconductors product
outline dimensions www.vishay.com vishay semiconductors revision: 08-jun-15 1 document number: 95240 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powertab ? dimensions in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 4.70 (0.19) 4.50 (0.18) 4.95 (0.19) 4.75 (0.18) 5.20 (0.20) 4.95 (0.19) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) 39.8 (1.56) 39.6 (1.55) 12.40 (0.48) 12.10 (0.47) 8.54 (0.34) 8.20 (0.32) 15.60 (0.61) 14.80 (0.58) 5.45 ref. (0.21 ref.) 1.30 (0.05) 1.10 (0.04) 3.09 (0.12) 3.00 (0.11) 1.35 (0.05) 1.20 (0.04) 0.60 (0.02) 0.40 (0.01) 12.20 (0.48) 12.00 (0.47) ? 4.20 (? 0.16) ? 4.00 (? 0.15) ? 4.20 (? 0.16) ? 4.00 (? 0.15) lead 1 lead 2 lead assignments lead 1 = cathode lead 2 = anode
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