? semiconductor components industries, llc, 1994 october, 2016 ? rev. 6 1 publication order number: MMBT5087Lt1/d MMBT5087L low noise transistor pnp silicon features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ?emitter voltage v ceo ?50 vdc collector ?base voltage v cbo ?50 vdc emitter ?base voltage v ebo ?3.0 vdc collector current ? continuous i c ?50 madc thermal characteristics characteristic symbol max unit total device dissipation fr?5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. sot?23 (to?236) case 318 style 6 device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. MMBT5087Lt1g, nsvMMBT5087Lt1g sot?23 (pb?free) 3,000 / tape & reel 1 2 3 MMBT5087Lt3g, nsvMMBT5087Lt3g sot?23 (pb?free) 10,000 / tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. 1 2q m 2q = device code m = date code* = pb?free package (note: microdot may be in either location) marking diagram collector 3 1 base 2 emitter www. onsemi.com
MMBT5087L www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (i c = ?1.0 madc, i b = 0) v (br)ceo ?50 ? vdc collector?base breakdown voltage (i c = ?100 adc, i e = 0) v (br)cbo ?50 ? vdc collector cutoff current (v cb = ?10 vdc, i e = 0) (v cb = ?35 vdc, i e = 0) i cbo ? ? ?10 ?50 nadc on characteristics dc current gain (i c = ?100 adc, v ce = ?5.0 vdc) (i c = ?1.0 madc, v ce = ?5.0 vdc) (i c = ?10 madc, v ce = ?5.0 vdc) h fe 250 250 250 800 ? ? ? collector?emitter saturation voltage (i c = ?10 madc, i b = ?1.0 madc) v ce(sat) ? ?0.3 vdc base?emitter saturation voltage (i c = ?10 madc, i b = ?1.0 madc) v be(sat) ? 0.85 vdc small?signal characteristics current?gain ? bandwidth product (i c = ?500 adc, v ce = ?5.0 vdc, f = 20 mhz) f t 40 ? mhz output capacitance (v cb = ?5.0 vdc, i e = 0, f = 1.0 mhz) c obo ? 4.0 pf small?signal current gain (i c = ?1.0 madc, v ce = ?5.0 vdc, f = 1.0 khz) h fe 250 900 ? noise figure (i c = ?20 madc, v ce = ?5.0 vdc, r s = 10 k , f = 1.0 khz) (i c = ?100 adc, v ce = ?5.0 vdc, r s = 3.0 k , f = 1.0 khz) nf ? ? 2.0 2.0 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. typical noise characteristics (v ce = ? 5.0 vdc, t a = 25 c) figure 1. noise voltage f, frequency (hz) 5.0 7.0 10 3.0 figure 2. noise current f, frequency (hz) 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.1 bandwidth = 1.0 hz r s 0 i c = 10 a 100 a e n , noise voltage (nv) i n , noise current (pa) 30 a bandwidth = 1.0 hz r s ? i c = 1.0 ma 300 a 100 a 30 a 10 a 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2.0 1.0 ma 0.2 300 a
MMBT5087L www. onsemi.com 3 noise figure contours (v ce = ? 5.0 vdc, t a = 25 c) 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m figure 3. narrow band, 100 hz i c , collector current ( a) figure 4. narrow band, 1.0 khz i c , collector current ( a) 10 0.5 db bandwidth = 1.0 hz r s , source resistance (ohms) r s , source resistance (ohms) figure 5. wideband i c , collector current ( a) 10 10 hz to 15.7 khz r s , source resistance (ohms) noise figure is defined as: nf 20 log 10 e n 2 4ktr s i n 2 r s 2 4ktr s 1 2 = noise voltage of the t ransistor referred to the input. (figure 3) = noise current of the transistor referred to the input. (figure 4) = boltzman?s constant (1.38 x 10 ?23 j/ k) = temperature of the source resistance ( k) = source resistance (ohms) e n i n k t r s 1.0 db 2.0 db 3.0 db 20 30 50 70 100 200 300 500 700 1.0k 10 20 30 50 70 100 200 300 500 700 1.0k 500k 100 200 500 1.0k 10k 5.0k 20k 50k 100k 200k 2.0k 1.0m 20 30 50 70 100 200 300 500 700 1.0k bandwidth = 1.0 hz 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db 0.5 db 1.0 db 2.0 db 3.0 db 5.0 db
MMBT5087L www. onsemi.com 4 typical static characteristics figure 6. collector saturation region i c , collector current (ma) 1.4 figure 7. collector characteristics i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 1.6 100 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 1.0 v * vc for v ce(sat) vb for v be 0.1 0.2 0.5 figure 8. ?on? voltages i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0 v ce , collector-emitter voltage (volts) 0.002 t a = 25 c i c = 1.0 ma 10 ma 100 ma figure 9. temperature coefficients 50 ma v ce , collector-emitter voltage (volts) 40 60 80 100 20 0 0 i c , collector current (ma) t a = 25 c pulse width = 300 s duty cycle 2.0% i b = 400 a 350 a 300 a 250 a 200 a *applies for i c /i b h fe /2 25 c to 125 c -55 c to 25 c 25 c to 125 c -55 c to 25 c 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40 1.2 1.0 0.8 0.6 0.4 0.2 0 2.4 0.8 0 1.6 0.8 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 v , temperature coefficients (mv/ c) 150 a 100 a 50 a
MMBT5087L www. onsemi.com 5 typical dynamic characteristics c, capacitance (pf) figure 10. turn?on time i c , collector current (ma) 500 figure 11. turn?off time i c , collector current (ma) 2.0 5.0 10 20 30 50 1000 figure 12. current?gain ? bandwidth product i c , collector current (ma) figure 13. capacitance v r , reverse voltage (volts) 3.0 1.0 500 0.5 10 t, time (ns) t, time (ns) f, current-gain bandwidth product (mhz) t 5.0 7.0 10 20 30 50 70 100 300 7.0 70 100 v cc = 3.0 v i c /i b = 10 t j = 25 c t d @ v be(off) = 0.5 v t r 10 20 30 50 70 100 200 300 500 700 - 2.0 -1.0 v cc = - 3.0 v i c /i b = 10 i b1 = i b2 t j = 25 c t s t f 50 70 100 200 300 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 t j = 25 c v ce = 20 v 5.0 v 1.0 2.0 3.0 5.0 7.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.05 c ib c ob 200 - 3.0 - 5.0 - 7.0 - 20 -10 - 30 - 50 - 70 -100 t j = 25 c
MMBT5087L www. onsemi.com 6 figure 14. thermal response t, time (ms) 1.0 0.01 r(t) transient thermal resistance (normalized) 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 (see an569/d) z ja(t) = r(t) ? r ja t j(pk) ? t a = p (pk) z ja(t) t 1 t 2 p (pk) figure 16 t j , junction temperature ( c) 10 4 -4 0 i c , collector current (na) figure 15. typical collector leakage current design note: use of thermal response data a train of periodical power pulses can be represented by the model as shown in figure 16. using the model and the device thermal response the normalized effective transient thermal resistance of figure 14 was calculated for various duty cycles. to find z ja(t) , multiply the value obtained from figure 14 by the steady state value r ja . example: dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms (d = 0.2) using figure 14 at a pulse width of 1.0 ms and d = 0.2, the reading of r(t) is 0.22. the peak rise in junction temperature is therefore t = r(t) x p (pk) x r ja = 0.22 x 2.0 x 200 = 88 c. for more information, see on semiconductor application note an569/d, available from the literature distribution center or on our website at www.onsemi.com . 10 -2 10 -1 10 0 10 1 10 2 10 3 -2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 v cc = 30 v i ceo i cbo and i cex @ v be(off) = 3.0 v
MMBT5087L www. onsemi.com 7 package dimensions sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 MMBT5087Lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
|
