jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 7 - http://www.jjwdz.com j ct151 series 1 2 a scr s rev. 5 .0 description: j ct151 series of silicon controlled rectifiers , with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. they are e speci all y recommended for use on solid state relay, motorcycle, power charger, t - t ools etc. jct 151f /jct151fp provides insulation voltage rated at 2000v rms from all three terminals to external he a tsink comply ing with ul standards (file ref: e252906). main features symbol jct151 - 650r jct151 - 800r v drm / v rrm 650v 800v i t(rms) 12a i gt 15ma absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage (t j =25 ) v drm 650 /800 v repetitive peak reverse voltage (t j =25 ) v rrm 650/800 v rms on - state current to - 2 51/ to - 252 (t c = 98 ) i t( rms ) 12 a to - 220 b (non - ins) / to - 220c / to - 263 (t c = 10 0 ) to - 220f (ins) / to - 220fp(ins ) (t c = 85 ) non repetitive surge peak on - state current (tp= 1 0 ms) i tsm 120 a to-220b non-insulated 1 2 3 to-220 f insulated 1 2 3 1 2 3 to-2 51 to-263 1 2 1 3 2 to-2 52 3 a(2) k(1) g(3) to-220 c 1 3 2 1 2 3 to-220 f p insulated
j ct151 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 7 - http://www.jjwdz.com i 2 t value for fusing (tp= 10 ms ) i 2 t 72 a 2 s repetitive rate of rise of on - state current ( i g = 2 i g t ) di t /dt 50 a / s peak gate current i gm 2 a peak gate power p gm 5 w average gate power dissipation p g(av) 0.5 w electrical characteristics (t j =25 unless otherwise specified ) symbol test condition value unit min. typ. max. i gt v d =12v r l =33 gt - 0. 75 1.5 v v gd v d =v drm t j =125 l =3.3k l i g = 1.2 i g t - 1 2 40 ma i h i t = 5 00ma - 12 30 ma dv/dt v d =2/3v drm gate ope n t j = 125 / static characteristics symbol parameter value(max) unit v tm i tm = 23 a tp=380 s t j =25 1. 7 v i drm v d =v d rm v r =v r rm t j =25 10 a i rrm t j = 1 25 1 ma thermal resistances symbol parameter value unit r th(j - mb) j unction to mounting base to - 251/ to - 252 2.0 /w to - 220b (non - ins) / to - 220c 1. 7 to - 220f (ins) / to - 220f p (ins) 4.5 to - 263 1.5
j ct151 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 7 - http://www.jjwdz.com ordering information package mechanical data j c t 1 5 1 b - 6 5 0 r j i e j i e m i c r o e l e c t r o n i c s c o . , l t d i t ( r m s ) : 1 2 a 6 5 0 r : v d r m / v r r m 6 5 0 v 8 0 0 r : v d r m / v r r m 8 0 0 v h : t o - 2 5 1 k : t o - 2 5 2 e : t o - 2 6 3 f : t o - 2 2 0 f ( i n s ) f p : t o - 2 2 0 f p ( i n s ) b : t o - 2 2 0 b ( n o n - i n s ) c : t o - 2 2 0 c s c r s
j ct151 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 7 - http://www.jjwdz.com package mechanical data a v1 v1 v1 d c2 c a2 e b2 l2 h l g l1 b b3 dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 b3 c c2 d e g h l l1 2.20 0.90 0.55 5.10 2.40 1.20 0.65 5.40 0.086 0.035 0.022 0.200 0.095 0.047 0.026 0.213 0.76 0.85 0.48 6.40 6.70 0.252 0.264 16.0 17.0 0.630 0.669 8.90 9.40 0.350 0.370 0.030 0.033 0.45 0.62 2.30 0.091 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.80 1.90 0.071 0.075 4 4 to-251 a v1 v1 v1 d c2 e b2 l2 h 0.6 min a2 c l1 g b dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 c c2 d e g h l1 2.20 0.03 0.55 5.10 2.40 0.23 0.65 5.40 0.086 0.001 0.022 0.200 0.095 0.009 0.026 0.213 0.48 6.40 6.70 0.252 0.264 9.35 10.6 0.368 0.417 0.45 0.62 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.30 1.70 0.051 0.067 4 4 4.40 4.70 0.173 0.185 v2 0 8 0 8 v2 to-252
j ct151 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 7 - http://www.jjwdz.com package mechanical data jie a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220b non-ins c2 c3 c g l2 a e h b d f l1 l3 dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.70 0.45 1.23 4.60 0.90 0.60 1.32 0.173 0.028 0.018 0.048 0.181 0.035 0.024 0.052 2.20 2.60 9.90 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.087 0.102 8.90 9.90 2.54 0.1 0.350 0.390 10.3 0.390 0.406 6.30 6.90 0.248 0.272 2.65 2.95 0.104 0.116 3.6 0.142 3.39 0.133 to-220c max 3.6mm
j ct151 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 6 / 7 - http://www.jjwdz.com package mechanical data a d e h g b c c2 max 3.5mm c3 v1 l3 l2 f l1 dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 v1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45 3.63 0.143 0.80 0.031 45 to-220f ins a d e b c c2 c3 v1 l3 l2 f l1 max 3.5mm g dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.50 0.74 0.47 2.45 4.90 0.83 0.65 2.75 0.177 0.029 0.019 0.096 0.193 0.033 0.026 0.108 2.60 3.00 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 v1 0.346 0.366 10.4 0.386 0.410 6.40 6.80 0.252 0.268 3.30 0.130 45 3.63 0.143 0.80 0.031 45 to-220fp ins h
j ct151 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 7 / 7 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangs u jiejie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the f ifth version which is made in 6 - aug. - 201 5 . this document supersedes and replaces all information previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copyright ? 201 5 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.3: surge peak on-state current versus number of cycles fig.1: maximum power dissipation versus rms on-state current fig.4: on-state characteristics (maximum values) fig.2: rms on-state current versus case temperature i t(rms) (a) p(w) 0 3 6 9 12 16 0 i t(rms) (a) tc ( ) 0 0 25 50 75 100 125 1 10 100 1000 number of cycles 0 i tsm (a) i tm (a) v tm (v) 0 1 2 3 4 5 1 10 12 15 18 20 5 15 20 3 6 to-220f(ins)/ to-220fp(ins) to-251/ to-252 to-220b(non-ins)/ to-220c/ to-263 100 tj=125 10 9 80 120 40 60 100 140 tj=25 =180 one cycle tp=10ms fig.6: relative variations of gate trigger current, holding current and latching current versus junction temperature fig.5: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of i t (di/dt < 50a/ s) tp(ms) 0.01 0.1 1 10 10 i tsm (a), i t (a s) -40 -20 0 20 40 60 80 100 120 140 i gt ,i h ,i l (tj)/i gt ,i h ,i l (tj=25 ) 0.0 0.5 1.5 2.0 3.0 2 2 2 1.0 2.5 tj( ) i gt 100 1000 di/dt i h &i l i tsm i t 2
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