ssf6007 50v p-channel mosfet www.goodark.com page 1 of 5 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ -10v -130 i d @ tc = 100c continuous drain current, v gs @ -10v -100 i dm pulsed drain current -520 ma p d @tc = 25c power dissipation 230 mw v ds drain-source voltage -50 v v gs gate-to-source voltage 20 v esd esd rating (hbm module) 1 kv t j t stg operating junction and storage temperature range -55 to + 150 c thermal resistance symbol characteristics typ. max. units junction-to-ambient (t 10s) 556 /w r ja junction-to-ambient (pcb mounted, steady-state) 540 /w v dss -50v r ds (on) 2.1ohm(typ.) i d -130ma sot-23 marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for line current interrupter in telephone sets, relay, high speed and line transformer drivers and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance. these features combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets and a wide variety of other applications 6007 6007
ssf6007 50v p-channel mosfet www.goodark.com page 2 of 5 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -50 v v gs = 0v, id = -10a r ds(on) static drain-to-source on-resistance 2.1 7 v gs =-10v,i d = -130ma v gs(th) gate threshold voltage -0.8 -2 v v ds = v gs , i d = -1ma -0.1 v ds =-40v,v gs = 0v -1 v ds =-50v,v gs = 0v i dss drain-to-source leakage current -50 a t j = 125c 10 v gs =20v i gss gate-to-source forward leakage -10 ua v gs = -20v gfs forward transconductance 50 s v ds =-25 v i d =-130m a c iss input capacitance 45 c oss output capacitance 18 c rss reverse transfer capacitance 11 pf v gs = 0; v ds = -5 v; f = 1 mhz t d(on) turnCon delay time 3.1 t r rise time 1.3 t d(off) turnCoff delay time 18 t f fall time 7.5 ns vdd = C15v; id = C2.5 a; rl = 50ohm source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 130 ma i sm pulsed source current (body diode) 520 ma mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage -1.3 v i s =-130ma, v gs =0v notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to- ambient thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
ssf6007 50v p-channel mosfet www.goodark.com page 3 of 5 rev.1.0 fig 1: transfer characteristics fig 2: out put curve fig 3: body diode forward curve vgs rgen vin g vdd rl vout s d v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% fig 4: switching test circuit fig 5: switching waveforms
ssf6007 50v p-channel mosfet www.goodark.com page 4 of 5 rev.1.0 sot-23 package information dimensions in millimeters (unit:mm) notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8
ssf6007 50v p-channel mosfet www.goodark.com page 5 of 5 rev.1.0 ordering and marking information device marking: 6007 package (available) sot-23 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/ inner box units/ inner box inner boxes/ carton box units/ carton box sot23 3000pcs 10pcs 30000pcs 4pcs 120000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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