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HMC339 PR500 SVC325 930911 XC641A MUR620CT LT1195C 75024A
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  3 . 1 0 . 2 5 6. 9 0. 25 5. 9 0. 25 2. 3 0. 15 1. 3 0. 25 0.203max 7.8 0. 2 0.25 0.06 features m e c h an i c al d at a m a x i m u m r a t i ngs a n d e l e c t r i c a l ch a r a c t e r i s t i cs ratings at 25 o c ambient temperature unless otherwise specified m a x i m um r e c u r r ent p e ak r e v e r s e v o l tage v rrm 40 50 60 v ma x imu m rms v o lt a g e v r w s 28 35 42 v maximum dc blocking voltage v dc v maximum average forw ord rectif ied current at c t l ( s e e f i g . 1) ( n o t e 2) i ( av) a peak f orw ard surge current 8.3ms single half - c s i ne - w a v e s upe r i m po s ed on r ated l o a d ( j e d e c c method) i f s m a maximum instantaneous f orw ard voltage at v 5 . 0 a ( n o t e . 1) v f v maximum dc reverse current @t a =25 o c at rated dc blockjing voltage(note1) @t a =100 o c r | ja r | jl o p e r at i ng j un c t i on te m pe r a t u r e r ange t j o c s to r age te m pe r a t u r e r ange t stg o c 0 . 5 55 17 i r note: 1.pulse test:300 | s pulse width,1%duty cy cle ss52c - - - ss510c 2. p . c . b . m o u n t e d w i t h 0 . 55 " x 0 . 55 " ( 1 4 . 0 x 14 . 0 m m 2 ) c o p p er p a d a r e a s r e v e r s e v o l t a g e : 2 0 --- 10 0 v cu r r e n t : 5 . 0 a ? built-in strain relief ? c a s e : j e d e c smc , m o l ded p l a s t i c o v er 1 11 1 pa ss i v a t ed c hip ? low po w er l o ss , h i gh e ff c i en c y ? plastic package has underwriters laborator 111 flammability classification 94v-0 t y p i c al the r m al r e s i t an c e ( n o t e 2) o c / w ? h i gh t e m p e r a t u r e s olde r ing gua r an t eed : 25 0 o c / 10 1 11 s e c onds at t e r m i nals ? p o l a r i t y : c o l or band d e no t es c a t hode end ? w eigh t : 0 . 007 oun c e s , 0 . 21 g r am ma units s m c ? low profile package ? f or s u r f a c e m oun t ed a ppli c a t ions 20 30 40 50 60 80 90 100 14 21 20 ? t e r m i nal s : s o l der p la t ed, s olde r able per m i l - s t d - 750, 1 11 1 m e t h od 2026 ? h i gh c u r r e nt c apa b il i t y , low f o r w a r d v o l t age d r op 30 175 5 . 0 ? f or u s e in low v ol t age h i gh f r equen c y in v e r t e r s ,f r ee 1 11 w hee l ing and p ola r i t y p r o t e c t i on app l i c a t ions ? g ua r d r ing f or o v e r v o l t age p r o t e c t i on - 5 5 - - - + 150 - 5 5 - - - + 1 5 0 0 . 5 5 0 . 7 0 20 1 0 ? m e t al s i l i c on jun c t i on, m ajo r i t y c a r r ier c ondu c t ion ? h i gh s u r ge c a pabi l i t y dimensions in millimeters ss52c ss53c SS54C ss55c ss56c ss58c ss59c ss510c 8 0 90 100 56 63 70 0.85 barrier rectifier s surface mount schottky diode semiconductor korea www.diode.kr
2.5 0 50 resistive or inductive load p.c.b.mounted on 0.2 x 0.2 ( 5.0 x 5.0 mm ) copperpad areas 5.0 60 70 80 90 100 110 120 130 140 150 160 170 t j = 1 25 t j = 25 0 20 40 60 80 100 120 140 . 0 1 . 0 5 . 1 . 5 1 0 1 . 0 5 .0 t j =25 pulse width=300 s 1% d uty cycle . 1 . 3 . 5 . 7 . 9 1.1 1.3 1.5 1 .7 1. 9 2.1 .1 1 10 20 s s 52 c -s s 54 c s s 55 c -s s 56 c s s 58 c -s s 510 c average f o rward rec t i f ied curren t ,amperes peak f o rward surge curren t ,amperes ins t an t a neous f o rward curren t ,amperes ins t an t aneous reverse curren t ,micr o amperes nu m be r o f c y c l e s a t 6 0 h z i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s pe r c e n t o f r a t ed p e ak r ev e r se v o l t a g e , ? a m b i e n t t e m pe r a t u r e ?? ss52c - - - ss510c f i g . 3 - - t y p i cal f o r w a r d c har a c t e r i s t i c s f i g . 4 - - t y p i c al r e v e r s e c h ara c t e r i s t i cs fig. 1 -- forward derating curve fig. 2-- peak forward surge current 0 1 100 10 8.3ms single half sine wave t j =125 3 5 7 0 105 140 175 www.diode.kr diode semiconductor korea


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