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international rectifiers rad-hard tm hexfet ? technology provides high performance powermosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. radiation hardenedpower mosfet surface mount(smd-2) www.irf.com 1 irhna7064 jansr2n7431u 60v, n-channel ref: mil-prf-19500/664 rad-hard ? hexfet ? technology features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount light weight
absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 75* i d @ v gs = 12v, t c = 100c continuous drain current 56 i dm pulsed drain current 300 p d @ t c = 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 500 mj i ar avalanche current 75* a e ar repetitive avalanche energy 30 mj dv/dt peak diode recovery dv/dt 2.5 v/ns t j operating junction -55 to 150 t stg storage temperature range c package mounting surface temperature 300 (for 5sec) weight 3.3 (typical) g pre-irradiation a product summary part number radiation level r ds(on) i d qpl part number irhna7064 100k rads (si) 0.015 ? 75a* jansr2n7431u irhna3064 300k rads (si) 0.015 ? 75a* jansf2n7431u irhna4064 500k rads (si) 0.015 ? 75a* jansg2n7431u irhna8064 1000k rads (si) 0.015 ? 75a* jansh2n7431u smd-2 esd class: 3b per mil-std-750, method 1020 pd-91416e downloaded from: http:///
2 www.irf.com irhna7064, jansr2n7431u pre-irradiation source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 75* i sm pulse source current (body diode) 300 v sd diode forward voltage 1.5 v t j = 25c, i s = 75a, v gs = 0v t rr reverse recovery time 360 ns t j = 25c, i f = 75a, di/dt 100a/ s q rr reverse recovery charge 3.1 c v dd 50v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 0.42 r thj-pcb junction-to-pc board 1.6 soldered to a 1 sq. copper-clad board electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.056 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.015 v gs = 12v, i d = 56a resistance 0.018 v gs = 12v, i d = 75a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 18 s v ds > 15v, i ds = 56a i dss zero gate voltage drain current 25 v ds = 48v ,v gs =0v 250 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 270 v gs =12v, i d = 75a q gs gate-to-source charge 60 nc v ds = 30v q gd gate-to-drain (miller) charge 110 t d (on) turn-on delay time 27 v dd =30v, i d = 75a t r rise time 120 v gs =12v, r g = 2.35 ? t d (off) turn-off delay time 120 t f fall time 100 l s + l d total inductance 4.0 c iss input capacitance 4900 v gs = 0v, v ds = 25v c oss output capacitance 2800 p f f = 1.0mhz c rss reverse transfer capacitance 860 na nh ns a ? measured from the center ofdrain pad to center of source pad c/w
note: corresponding spice and saber models are available on international rectifier website. downloaded from: http:///
www.irf.com 3 pre-irradiation irhna7064, jansr2n7431u international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. 1. part number irhna7064 (jansr2n7431u) 2. part numbers irhna3064 (jansf2n7431u), irhna4064 (jansg2n7431u) and irhna8064 (jansh2n7431u) fig a. typical single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. radiation characteristics table 2. typical single event effect safe operating area ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v br 36.8 305 39 60 60 45 40 30 i 59.9 345 32.8 40 35 30 25 20 0 10 20 30 40 50 60 70 0 -5 -10 -15 -20 vgs vds br i table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k-1000k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 60 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds = 48v, v gs = 0v r ds(on) static drain-to-source 0.015 0.025 ? v gs = 12v, i d = 56a on-state resistance (to-3) v sd diode forward voltage 1.5 1.5 v v gs = 0v, i s = 75a downloaded from: http:///
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10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 10 100 1000 5 6 7 8 9 10 11 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 89a !" downloaded from: http:///
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1 10 100 0 2000 4000 6000 8000 10000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 50 100 150 200 250 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 35a v = 12v ds v = 30v ds v = 48v ds 1 10 100 1000 0.0 1.0 2.0 3.0 4.0 5.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j !" 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited 100 s dc by rds(on) downloaded from: http:///
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v ds 90%10% v gs t d(on) t r t d(off) t f $
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v gs 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 7 pre-irradiation irhna7064, jansr2n7431u q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, !

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t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 16a 22a 35a v gs downloaded from: http:///
8 www.irf.com irhna7064, jansr2n7431u pre-irradiation footnotes: case outline and dimensions smd-2 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited bymaximum junction temperature. v dd = 25v, starting t j = 25c, l=0.17mh peak i l = 75a, v gs =12v i sd 75a, di/dt 220a/ s, v dd 60v, t j 150c ir world headquarters: 101 n. sepulveda blvd, el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2014 downloaded from: http:///

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