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2008. 9. 8 1/2 semiconductor technical data kdr331 schottky barrier type diode revision no : 2 high speed switching. features h low forward voltage : v f =0.25(typ.) @i f =5ma h small package : usm. maximum rating (ta=25 ? ) dim millimeters a b d e 1. anode 1 2. anode 2 3. cathode usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min 3 2 1 + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 15 v reverse voltage v r 10 v maximum (peak) forward current i fm 100 * ma average forward current i o 50 * ma surge current (10ms) i fsm 1 * a power dissipation p d 100 mw junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? operating temperature range t opr -40 q 100 ? characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.21 - v v f(2) i f =5ma - 0.25 0.30 v f(3) i f =50ma - 0.35 0.50 reverse current i r v r =10v - - 20 a total capacitance c t v r =0v, f=1mhz - 13 40 pf * : unit rating. total rating=unit rating ? 1.5 uw type name marking lot no.
2008. 9. 8 2/2 kdr331 revision no : 2 reverse current i r (a) reverse voltage v r (v) i r - v r 0 0 p - ta power dissipation p (mw) 20 forward current i f (ma) forward voltage v f (mv) i f - v f reverse voltage v r (v) total capacitance c t (pf) 0.01 0.1 c t - v r 11020 0 2 25 50 75 100 125 40 60 80 100 120 0 0.01 0.1 24 1 8 610 10 0 0.01 0.1 1 ta=23 c 100 200 300 400 500 12 4 6 8 10 12 14 ta=23 c ambient temperature ta ( c) |
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