1 mcr310 series silicon controlled rectifiers reverse blocking triode thyristors designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and mpu interface. ? center gate geometry for uniform current density ? all diffused and glass-passivated junctions for parameter uniformity and stability ? small, rugged, thermowatt construction for low thermal resistance, high heat dissipation and durability ? low trigger currents, 200 a maximum for direct driving from integrated circuits ? pb?free packages are available maximum ratings (t j = 25 c unless otherwise noted.) rating symbol value unit peak repetitive forward and reverse blocking voltage (1) (t j = ?40 to 110 c) (1/2 sine wave, r gk = 1 k ) mcr310-6 mcr310-8 mcr310-10 v drm or v rrm 400 600 800 volts on-state rms current (t c = 75 c) i t(rms) 10 amps peak non-repetitive surge current (1/2 cycle, 60 hz, t j = ?40 to 110 c) i tsm 100 amps circuit fusing (t = 8.3 ms) i 2 t 40 a 2 s peak gate voltage (t 10 s) v gm 5 volts peak gate current (t 10 s) i gm 1 amp peak gate power (t 10 s) p gm 5 watts average gate power p g(av) 0.75 watt operating junction temperature range t j ?40 to +110 c storage temperature range t stg ?40 to +150 c mounting torque ? 8 in.-lb. thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 2.2 c/w thermal resistance, junction to ambient r ja 60 c/w maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. (1) v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. scrs 10 amperes rms 400 thru 800 volts device package shipping ordering information mcr310?6 to220ab 500/box mcr310?8 to220ab mcr310?10 to220ab 500/box 500/box c g a to?220ab case 221a style 3 1 2 3 4 www.kersemi.com marking diagram x = 6, 8 or 10 a = assembly location y = year ww = work week g = pb?free package mcr310?6g to220ab (pb?free) 500/box mcr310?8g to220ab (pb?free) 500/box mcr310?10g to220ab (pb?free) 500/box mcr310?xg ayww preferred devices are recommended choices for future use and best overall value.
mcr310 series www.kersemi.com 2 electrical characteristics (t c = 25 c, r gk = 1 k unless otherwise noted) characteristic symbol min typ max unit peak forward blocking current (1) t c = 110 c (t j = 110 c, v d = rated v drm )t c = 25 c i drm ? ? ? ? 500 10 a a peak reverse blocking current (1) t c = 110 c (t j = 110 c, v r = rated v rrm )t c = 25 c i rrm ? ? ? ? 500 10 a a on-state voltage (i tm = 20 a peak, pulse width 1 ms, duty cycle 2%) v tm ? 1.7 2.2 volts gate tri gger current, continuous dc (2) (v d = 12 v, r l = 100 ) i gt ? 30 200 a gate tri gger v oltage, continuous dc (v d = 12 v, r l = 100 ) (v d = rated v drm , r l = 10 k , t j = 110 c) v gt ? 0.1 0.5 ? 1.5 ? volts holding current (v d = 12 v, i tm = 100 ma) i h ? ? 6 ma critical rate of rise of forward blocking voltage (v d = rated v drm , t j = 110 c, exponential waveform) dv/dt ? 10 ? v/ s gate controlled turn-on time (v d = rated v drm , i tm = 20 a, i g = 2 ma) t gt ? 1 ? s 1. ratings apply for negative gate voltage or r gk = 1 k . devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 2. does not include r gk current. figure 1. average current derating figure 2. on-state power dissipation figure 3. normalized gate current figure 4. gate voltage 0.3 120 0.5 1 2 ?40 ?20 0 20 40 60 80 90 100 3 140 v d = 12 vdc 8 t j , junction temperature ( c) 024 110 6 70 80 90 100 10 120 i t(av) , average on-state current (amps) = 30 180 dc = conduction angle 0.6 0.1 0.2 0.3 0.4 0.5 40 0.7 ?60 ?40 ?20 0 100 20 60 80 120 v d = 12 vdc 02 4 6 8 16 t j , junction temperature ( c) 0 4 8 12 20 = conduction angle 10 i t(av) , average on-state current (amps) 90 180 dc t , maximum case temperature ( c) c normalized gate current p , average power dissipation (watts) av v , gate trigger voltage (volts) gt 60 = 30 60 90
mcr310 series 3 package dimensions to?220ab case 221a?09 issue aa style 3: pin 1. cathode 2. anode 3. gate 4. anode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 ??? 1.15 ??? z ??? 0.080 ??? 2.04 b q h z l v g n a k f 123 4 d seating plane ?t? c s t u r j www.kersemi.com
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