2014. 3. 31 1/3 semiconductor technical data ktc801e epitaxial planar npn transistor revision no : 3 general purpose application. switching application. features h a super-minimold package houses 2 transistor. h excellent temperature response between these 2 transistor. h high pairing property in h fe . h the follwing characteristics are common for q 1 , q 2 . maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c * 200 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 u emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 u dc current gain h fe (note) v ce =6v, i c =2 v 120 - 400 collector-emitter saturation voltage v ce(sat) i c =100 v , i b =10 v - 0.1 0.30 v transition frequency f t v ce =10v, i c =1 v 80 - - ? collector output capacitance c ob v cb =10v, i e =0, f=1 ? - 2 3.5 ? noise figure nf v ce =6v, i c =0.1 v , f=1 , rg=10 ? - 1.0 10 f * total rating note : h fe classification y(4):120 q 240, gr(6):200 q 400 equivalent circuit (top view) marking
2014. 3. 31 2/3 ktc801e revision no : 3
2014. 3. 31 3/3 ktc801e revision no : 3
|
