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www.irf.com 1 09/11/09 IRG6I330UPBF descriptionthis igbt is specifically designed for applications in plasma display panels. this device utilizes advanced trench igbt technology to achieve low v ce(on) and low e pulse tm rating per silicon area which improve panel efficiency. additional features are 150c operating junction temperature and high repetitive peak currentcapability. these features combine to make this igbt a highly efficient, robust and reliable device for pdp applications. features advanced trench igbt technology optimized for sustain and energy recovery circuits in pdp applications low v ce(on) and energy per pulse (e pulse tm ) for improved panel efficiency high repetitive peak current capability lead free package
e c g n-channel gc e gate collector emitter
v ce min 330 v v ce(on) typ. @ i c = 28a 1.30 v i rp max @ t c = 25c 250 a t j max 150 c key parameters absolute maximum ratings parameter units v ge gate-to-emitter voltage v i c @ t c = 25c continuous collector current, v ge @ 15v a i c @ t c = 100c continuous collector, v ge @ 15v i rp @ t c = 25c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case CCC 2.9 c/w max. 15 250 28 30 300 -40 to + 150 10lb in (1.1n m) 4317 0.34 downloaded from: http:///

2 www.irf.com half sine wave with duty cycle = 0.05, ton=2sec. r is measured at t j of approximately 90c. pulse width 400s; duty cycle 2%. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv ces collector-to-emitter breakdown voltage 330 CCC CCC v v (br)ecs emitter-to-collector breakdown voltage 30 CCC CCC v ? v ces / ? t j breakdown voltage temp. coefficient CCC 0.29 CCC v/c CCC 1.13 CCC CCC 1.30 1.55 1.43 CCC v CCC 1.80 CCC CCC 2.38 CCC CCC 2.10 CCC v ge(th) gate threshold voltage 2.6 CCC 5.0 v ? v ge(th) / ? t j gate threshold voltage coefficient CCC -12 CCC mv/c i ces collector-to-emitter leakage current CCC 2.0 20 CCC 10 CCC CCC 40 200 CCC 150 CCC i ges gate-to-emitter forward leakage CCC CCC 100 na gate-to-emitter reverse leakage CCC CCC -100 g fe forward transconductance CCC 94 CCC s q g total gate charge CCC 86 CCC nc q gc gate-to-collector charge CCC 36 CCC t d(on) turn-on delay time CCC 39 CCC i c = 25a, v cc = 196v t r rise time CCC 32 CCC ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time CCC 120 CCC t j = 25c t f fall time CCC 55 CCC t d(on) turn-on delay time CCC 37 CCC i c = 25a, v cc = 196v t r rise time CCC 33 CCC ns r g = 10 ? , l=200h, l s = 150nh t d(off) turn-off delay time CCC 159 CCC t j = 150c t f fall time CCC 95 CCC t st shoot through blocking time 100 CCC CCC ns e pulse energy per pulse j human body model machine model c ies input capacitance CCC 2275 CCC c oes output capacitance CCC 108 CCC pf c res reverse transfer capacitance CCC 75 CCC l c internal collector inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l e internal emitter inductance CCC 7.5 CCC from package v ge = 15v, i ce = 120a static collector-to-emitter voltage v ce(on) v ge = 15v, i ce = 70a, t j = 150c v ge = 15v, i ce = 40a CCC 1086 CCC v ce = 25v, i ce = 25a v ce = 200v, i c = 25a, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 25c CCC 943 CCC v cc = 240v, v ge = 15v, r g = 5.1 ? v ce = v ge , i ce = 500a v ce = 330v, v ge = 0v v ce = 330v, v ge = 0v, t j = 150c v ge = 30v v ge = -30v v ce = 330v, v ge = 0v, t j = 100c a ? = 1.0mhz, see fig.13 and center of die contact v ce = 330v, v ge = 0v, t j = 125c l = 220nh, c= 0.40f, v ge = 15v l = 220nh, c= 0.40f, v ge = 15v v cc = 240v, r g = 5.1 ?, t j = 100c conditions v ge = 0v, i ce = 1 ma reference to 25c, i ce = 1ma v ge = 15v, i ce = 70a v ge = 15v, i ce = 15a v ge = 15v, i ce = 28a v ge = 0v, i ce = 1 a esd class 2 (per jedec standard jesd22-a114) class b (per eia/jedec standard eia/jesd22-a115) v ce = 30v v ge = 0v downloaded from: http:///

www.irf.com 3 fig 1. typical output characteristics @ 25c fig 3. typical output characteristics @ 125c fig 4. typical output characteristics @ 150c fig 2. typical output characteristics @ 75c fig 5. typical transfer characteristics fig 6. v ce(on) vs. gate voltage 0 2 4 6 8 10 12 14 16 18 v ge (v) 0 100 200 300 400 500 i c e ( a ) t j = 25c t j = 150c 5 1 01 52 0 v ge (v) 0 5 10 15 20 25 v c e ( v ) t j = 25c t j = 150c i c = 25a 0 2 4 6 8 10 v ce (v) 0 100 200 300 400 500 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 100 200 300 400 500 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 100 200 300 400 500 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v 0 2 4 6 8 10 v ce (v) 0 100 200 300 400 500 i c e ( a ) v ge = 18v vge = 15v vge = 12v vge = 10v vge = 8.0v vge = 6.0v downloaded from: http:///

4 www.irf.com fig 7. maximum collector current vs. case temperature fig 8. typical repetitive peak current vs. case temperature fig 10. typical e pulse vs. collector-to-supply voltage fig 9. typical e pulse vs. collector current fig 11. e pulse vs. temperature fig 12. forrward bias safe operating area 0 25 50 75 100 125 150 t c (c) 0 5 10 15 20 25 30 i c ( a ) 150 160 170 180 190 200 210 220 230 i c , peak collector current (a) 600 650 700 750 800 850 900 950 1000 1050 1100 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh c = variable 100c 25c 25 50 75 100 125 150 t j , temperature (oc) 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) v cc = 240v l = 220nh t = 1s half sine c= 0.4f c= 0.3f c= 0.2f 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 240 260 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 2s duty cycle <= 0.05 half sine wave 1 10 100 1000 v ce (v) 0.1 1 10 100 1000 i c ( a ) 10sec 100sec tc = 25c tj = 150c single pulse 1msec 195 200 205 210 215 220 225 230 235 240 v cc, collector-to-supply voltage (v) 500 600 700 800 900 1000 1100 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c downloaded from: http:///

www.irf.com 5 fig 13. typical capacitance vs. collector-to-emitter voltage fig 14. typical gate charge vs. gate-to-emitter voltage fig 15. maximum effective transient thermal impedance, junction-to-case 0 2 04 06 08 01 0 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 240v v ces = 150v v ces = 60v i c = 25a 0 50 100 150 200 v ce , collector-toemitter-voltage(v) 10 100 1000 10000 100000 c a p a c i t a n c e ( p f ) cies coes cres v gs = 0v, f = 1 mhz c ies = c ge + c gd , c ce shorted c res = c gc c oes = c ce + c gc 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.11889 0.0000450.35666 0.001841 1.09829 0.128114 1.32616 2.452 downloaded from: http:///

6 www.irf.com fig 16a. t st and e pulse test circuit fig 16b. t st test waveforms fig 16c. e pulse test waveforms 1k vcc dut 0 l fig. 17 - gate charge circuit (turn-off) driver dut l c vcc rg rg b a ipulse energy v ce i c current pulse a pulse b t st downloaded from: http:///

www.irf.com 7 to-220ab full-pak package is not recommended for surface mount application. data and specifications subject to change without notice. this product has been designed for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2009

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to-220 full-pak package outlinedimensions are shown in millimeters (inches) to-220 full-pak part marking information

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note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///

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